Failure Analysis Applications, SAMCO Reactive Ion Etching Systems for Failure Analysis

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Failure Analysis

SiN Etching (Exposing both metal 1 and 2

Anisotropic etching of passivation (15,000 Angstroms of Silicon Nitride) and intermetal dielectric (8,000 Angstroms of Silicon Dicoxide)

Exposing 5 Metal Layers

Material: SiN and SiO2

Chemistry: Fluorine

System Used: RIE-10NR

Anisotropic Etching of Passivation

15,000 Angstroms of Silicon Nitride and intermetal dielectric 8,000 Angstroms of Silicon Dicoxide

Nano Structure Si Device

Material: Si

System Used: RIE-10NR