MEMS Etching, ICP Etching for MEMS, Deep Silicon etching, Sapphire Etching

Applications

Toll Free: (877) SAMCO-79

MEMS

Sapphire Etching

Mask: Metal

Etch depth: 100 um

Etch rate: 0.28 um/min.

Chemistry: Chlorine

High-Speed Etching

Material: SiO2

Mask: W-Si

Rate: 1 um/min.

Selectivity: 40

Silicon Field Emitter Arrays

Chemistry: Fluorine

Chemistry Mask: SiO2

Surface Micromachine

Material: Si

Mask: SiO2

Rate: 8300 A/min.

Depth: 20 µm

Chemistry: Chlorine/Fluorine

Pressure Sensor

Material: Si

Mask: Metal

Etch depth: 81 um, each side

Chemistry: Fluorine

Square Hole Etching of Silicon using Bosch Process in SAMCO ICP Etching Systems

	Nano Pattern Si Etching Material: Si Etch depth: 4.6 um Features: 500x500 nm Chemistry: Fluorine System Used: RIE-200iPB Images are courtesy of: Dr. Chieh-Hsiung Kuan National Taiwan University Dept. of Electrical Engineering
	Surface Micromachine Material: Si Mask: SiO2 Rate: 4700 A/min. Depth: 10 um Chemistry: Bromine/Fluorine
	Surface Micromachine Material: Si Mask: SiO2 Rate: 3900 A/min. Depth: 10 um
	Deposition of silicon oxide as an insulation layer
	Deep Si Etching Material: Si Mask: Photoresist Etch depth: 150 um Trench Width: 4 um Chemistry: Fluorine Etch depth: 240 um Trench Width: 20 um System Used: RIE-800iPB
	Etching of Si sacrificial layer using XeF₂ (Xenon Difluoride) etching system
	Etching of 1um thick Si using SAMCO XeF₂ etching system