Etching of SiO2, GaN, InP, AlGaAs

Applications

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Photonics Applications

	InP Taper Etching Mask: SiO₂ Etch rate: 6600 A/min Chemistry: Chlorine
	Fabrication of Photonic Crystals
	SiO₂ Waveguide Etch Sidewall Angle: 89° Etch Rate: 4300 A/min. Trench Depth: 30 um
	SiO₂ Anti-Reflection Film with graded refractive index

	AlGaAs LED Mask: Gold Etch rate: 1.54 um/min Etch depth: 60 um
	Fabrication of Polarization Splitting Devices with TEOS-SiO2 films
	Surface Emitting Laser Matrix Pattern Material: InP Mask: EB Lithography Resist Etch Rate: 9200 A/min. Selectivity: 11
	Deposition of doped SiO₂ for microlens arrays Systems used: PD-10ST (deposition) RIE-200iP (etching)