MO (Metal Organic) CVD systems are designed for the growth of multilayer
single crystal nitride layers for compound semiconductor devices such as LEDs and LDs.
SAMCO developed and released the first MO-CVD system in Japan in 1981, and possesses a wealth of expertise with MO-CVD systems.
Utilized in compound semiconductor and silicon device
fabrication, Plasma Enhanced Chemical Vapor Deposition (PECVD) systems are designed for the
deposition of insulation and passivation films.
SAMCO PECVD systems can deposit high-quality silicon-based thin films (SiO2, Si3N4, SiOxNy, a-Si:H).
SAMCO's LS-CVD (Liquid Source CVD) systems achieve superior step-coverage and gap-fill performance, required for the MEMS, 3D-LSI, and Opto Electronics markets. Importantly, the technology enables deposition at lower temperatures and doesn't require toxic or flammable gases. LS-CVD systems can deposit high-quality TEOS-SiO2, LS-SiN, High-k think film, and Diamond-like-carbon (DLC).