Utilized in compound semiconductor and silicon
device fabrication, Plasma Enhanced Chemical Vapor Deposition (PECVD) systems are
designed for the deposition of insulation and passivation films.
SAMCO PECVD systems can deposit high-quality silicon-based thin films (SiO2, Si3N4, SiOxNy, a-Si:H).
- SiN and SiO2 film deposition
- Process up to 8" wafers
- Low cost, small footprint
- Fume hood
- Dual reaction chamber
- Deposition of Silicon Oxide
- Deposition of Silicon Nitride
- Built-in glovebox
- Loadlock Plasma CVD system
- Oxide and Nitride deposition
- Load-locked PECVD system
- Process up to 8" wafers
- Compact footprint
- Recipe storage & data logging
- Production type system
- Deposition of passivation layers and interlayer dielectrics
- Cassette-to-cassette production system
- Process up to 8" wafers
- Modular system (up to 3 chambers)
- Compact foot print
- Prevents cross-contamination
- Thick DLC film deposition
- Process up to 8" wafers
- Recipe storage & data logging
- Deposition of Silicon Oxide
- Deposition of Silicon Nitride
- 380mm round lower electrode
- Excellent thickness uniformity
- Oxide and Nitride deposition
- Loadlock version of PD-3800
- High-volume manufacturing
- Deposition of Silicon Nitride
- Deposition of Silicon Oxide
- Process up to 210x295 mm samples
- Excellent thickness uniformity
> CVD Systems
> PECVD (Plasma Enhanced CVD) Systems
