Utilized in compound semiconductor and silicon
device fabrication, Plasma-Enhanced Chemical Vapor Deposition (PECVD) systems are
designed for the deposition of insulation and passivation films.
SAMCO PECVD systems
can deposit high-quality silicon-based thin films (SiO2, Si3N4, SiOxNy, a-Si:H).
- SiN and SiO2 film deposition
- Process up to 8" wafers
- Low cost, small footprint
- Fume hood
- Oxide and Nitride deposition
- Load-locked PECVD system
- Process up to 8" wafers
- Compact footprint
- Recipe storage & data logging
- Production type system
- Deposition of passivation layers and interlayer dielectrics
- Cassette-to-cassette production system
- Process up to 8" wafers
- Modular system (up to 3 chambers)
- Compact foot print
- Prevents cross-contamination
- Thick DLC film deposition
- Process up to 8" wafers
- Recipe storage & data logging
- Deposition of Silicon Oxide
- Deposition of Silicon Nitride
- 380mm round lower electrode
- Excellent thickness uniformity
- Oxide and Nitride deposition
- Loadlock version of PD-3800
- High-volume manufacturing
- Deposition of Silicon Nitride
- Deposition of Silicon Oxide
- Process up to 210x295 mm samples
- Excellent thickness uniformity
> CVD systems
> Plasma CVD systems
