Plasma-Enhanced Chemical Vapor Deposition system, CVD System, Model PD-220NA, Nitride Deposition, Oxide Deposition, DLC Deposition

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Plasma-Enhanced CVD System

Model PD-220NA

SAMCO's PD-220NA is highly flexible and supports a wide range of applications, from cutting edge R&D to low volume manufacturing. The PD-220N is a unique Plasma-Enhanced Chemical Vapor Deposition (PECVD) system designed for the deposition of silicon-based thin films (SiO₂, Si₃N₄, SiO_xN_y, a-Si:H).

The system offers all of the standard features for PECVD in a very compact footprint. Films with superior thickness and refractive index uniformity can be deposited over a 230mm diameter area, with excellent batch-to-batch repeatability. A computerized touch-panel provides a user-friendly interface for parameter control and recipe storage.

The SAMCO PD-220NA is ideal for depositing thin film for research and development as well as pilot production applications.

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Dimensions:

Main Unit: 500(W) x 1050(D) x 1510(H) mm

Applications

Deposition of silicon oxide (SiO_x)
Deposition of silicon nitride (SiN)
Deposition of silicon oxy-nitride (SiO_xN_y)
Deposition of amorphous silicon (a-Si:H)

Features

Provides the capacity to process five 3" wafers, three 4" wafers, or one 8" wafer per cycle
Uniform deposition rate
Fully automatic "one-button" operation time with full manual override
Easy-to-use computerized touch panel for parameter control, recipe entry and storage (100 recipes total, 100 steps/recipe)
Supports the continuous execution of multiple processes such as cleaning process followed by deposition for greater process flexibility
Complete set of system interlocks to protect the system and operator