SAMCO PECVD Systems - Plasma Enhanced Chemical Vapor Deposition for Nitride, Oxide & DLC seposition

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	PD-220NA - SiN and SiO₂ film deposition - Process up to 8" wafers - Low cost, small footprint - Fume hood - Windows based & UL Certified
	PD-3800 - Deposition of Silicon Oxide - Deposition of Silicon Nitride - 380mm round lower electrode - Excellent thickness uniformity
	PD-220NL - Oxide and Nitride deposition - Load-locked PECVD system - Process up to 8" wafers - Compact footprint - Recipe storage & data logging
	PD-4800 - Deposition of Silicon Nitride - Deposition of Silicon Oxide - Process up to 210x295 mm samples - Excellent thickness uniformity
	PD-270STP - Liquid source CVD system - Low-temperature thick oxide deposition (up to 30-microns) - Process up to 8" wafers - High deposition rates
	PD-270STL - Liquid source CVD system - Low-temperature thick oxide deposition (up to 30-microns) - Process up to 8" wafers - Load lock version of the PD-270STP

	PD-270STLC - Liquid source CVD system - Low-temperature thick oxide deposition (up to 30-microns) - Process up to 8" wafers - Cassette-to-cassette production system
	PD-220LC - Production type system - Deposition of passivation layers and interlayer dielectrics - Cassette-to-cassette production system - Process up to 8" wafers
	PD-3802L - Dual reaction chamber - Deposition of Silicon Oxide - Deposition of Silicon Nitride - Built-in glovebox - Loadlock Plasma CVD system
	PD-3800L - Oxide and Nitride deposition - Loadlock version of PD-3800 - Process twenty-six 2" wafers, nine 3" wafers or six 4" wafers - High-volume manufacturing
	PD-2203L - Modular system (up to 3 chambers around the load-lock chamber) - Compact foot print - Prevents cross-contamination
	PD-200D - Thick DLC film deposition (up to 30 microns) - Process up to 8" wafers - Recipe storage & data logging

ICP Etching / DRIE

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UV-Ozone Cleaners