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Inductively Coupled Plasma Etching System

Model RIE-200iP

SAMCO's RIE-200iP load-locked etching system takes advantage of the latest inductively coupled plasma technology to perform high-speed, quarter-micron etching of the various thin films used in ULSI processing. SAMCO's proprietary "Tornado Coil Electrode" is the key to the anisotropic etching of silicon, metals and compound semiconductor materials.

This system is also available with a 212 mm sample stage. This is Model RIE-212iP.
SAMCO also manufactures Model RIE-230iP which can process batches of twelve 2" wafers or three 4" wafers.

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Dimensions:

Main Unit: 1000(W) x 1100(D) x 1604(H) mm

Pump Unit: 700(W) x 480(D) x 513(H) mm

Applications

  • Anisotropic etching of all types of silico-based films for ULSI devices
  • Etching of GaAs, GaN, InP and other compound semiconductor materials
  • Low-damage etching of III-V compounds
  • Fabrication of micromachines
  • High rate anisotropic etching of Si for MEMS applications
  • Fabrication of waveguide devices
  • Etching of metal films

Features

  • Capable of processing up to 6" wafers (8" optional)
  • Manual loading load-lock system
  • Active wafer temperature control (Helium backside cooling)
  • Electrostatic chuck for wafer clamping
  • Chlorine chemistry compatible
  • Recipe storage and data logging
  • 100 recipes with 10 steps/recipe (max. 1000 steps possible with loop cycle function)