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Inductively Coupled Plasma (ICP) Etching System

Model RIE-200iPB (BOSCH)

SAMCO's RIE-200iPB is an inductively coupled plasma (ICP) etching system that uses high-density plasma to perform the deep silicon etching required by MEMS devices. The system features SAMCO's proprietary Tornado ICP source, and is based on the field proven RIE-200iP series of etching systems.

The RIE-200iPB was specifically designed for the BOSCH process (licensed from Robert Bosch GmbH) to achieve superior performance for high-speed deep vertical etching of silicon.

The Tornado electrode configuration efficiently generates a stable high-density plasma, and precisely etches deep silicon structures with a high degree of uniformity and selectivity.

The SAMCO RIE-200iPB achieves the etching of high aspect ratio structures (50-200) by alternating between cycles of passivation layer deposition (sidewall protection) and silicon etching.

 

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Dimensions:

Main Unit: 1000(W) x 1375(D) x 1670(H) mm

Applications

  • Manufacturing of MEMS devices
  • Etching of via holes for 3D packaging
  • Manufacturing of sensors

Click here to view SEM images on Etching of Square Holes in Silicon using the Bosch process(313 KB)

Features

  • Capable of processing up to 6" wafers (8" optional)
  • Manual wafer loading, automated robot transfer to load-lock chamber
  • Active wafer temperature control (Helium backside cooling)
  • Electrostatic chuck for wafer clamping
  • High-speed MFCs
  • Recipe storage and data logging
  • 100 recipes with 10 steps/recipe (max. 1000 steps possible with loop cycle function)