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Inductively Coupled Plasma (ICP) Etching System
Model RIE-200iPB (BOSCH) |
SAMCO's RIE-200iPB is an inductively coupled plasma (ICP) etching
system that uses high-density plasma to perform the deep silicon
etching required by MEMS devices. The system features SAMCO's
proprietary Tornado ICP source, and is based on the field proven
RIE-200iP series of etching systems.
The RIE-200iPB was specifically designed for the BOSCH process
(licensed from Robert Bosch GmbH) to achieve superior performance for
high-speed deep vertical etching of silicon.
The Tornado electrode configuration efficiently generates a stable
high-density plasma, and precisely etches deep silicon structures with
a high degree of uniformity and selectivity.
The SAMCO RIE-200iPB achieves the etching of high aspect ratio
structures (50-200) by alternating between cycles of passivation layer
deposition (sidewall protection) and silicon etching.
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Dimensions:
Main Unit: 1000(W) x 1375(D) x 1670(H) mm
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