XeF2 Etching: Benchtop (Xenon Difluoride) Etching System

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Desktop Xenon Difluoride (XeF₂) Etching System

Model VPE-4F

SAMCO's VPE-4F is a Xenon Difluoride etching system that was designed primarily for the etching of silicon sacrificial layers in the processing of self-standing MEMS devices.

The etch process is completely dry, and eliminates the stiction problems that occur during conventional wet etching process. In addition, the space efficient design makes the system ideal for desktop use in research and development.

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Dimensions:

Main Unit: 400(W) x 600(D) x 430(H) mm

Applications

Etching of silicon sacrificial layers in self-standing MEMS devices
Failure analysis (analysis of gate oxide by etching away rear side of device)

Features

The process is completely dry and prevents stiction damage in self-standing devices
The dry process eliminates the need for pre-processing and post-processing that are required with wet etching
Pulsing of the gas flow enables the user to easily control the etch speed and the gas consumption rate
The process is plasma-free, and therefore eliminates the risks of plasma damage (bombardment by ions and electrons)
The compact desktop design minimizes space requirements
System cost is minimized by utilizing a design optimized for processing with XeF₂