Scientific Paper on Surface Treatment to Reduce the Resistance of AlGaN/GaN HEMT from MIT and University of Tsukuba

June 27, 2013 Samco 2013 Customer, Plasma Treatment, Power Devices, Samco Customer Publication, Surface Treatment

Formation of low resistance ohmic contacts in GaN-based high electron mobility transistors with BCl3 surface plasma treatment

Tatsuya Fujishima1, Sameer Joglekar1, Daniel Piedra1, Hyung-Seok Lee1, Yuhao Zhang1, Akira Uedono2 and Tomás Palacios1
1 Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139-4307, USA
2 Division of Applied Physics, Faculty of Pure and Applied Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
Appl. Phys. Lett. 103, 083508 (2013)

Surface treatment technique to reduce the resistance and to increase the uniformity of ohmic contacts in AlGaN/GaN high electron mobility transistors was developed using Samco ICP etch system.

For more details of our process solutions for GaN power device fabrication, please visit the page below.
AlGaN/GaN Etch for GaN Power Device Fabrication