Scientific Paper on Surface Treatment to Reduce the Resistance of AlGaN/GaN HEMT from MIT and University of Tsukuba
Formation of low resistance ohmic contacts in GaN-based high electron mobility transistors with BCl3 surface plasma treatment
Tatsuya Fujishima1, Sameer Joglekar1, Daniel Piedra1, Hyung-Seok Lee1, Yuhao Zhang1, Akira Uedono2 and Tomás Palacios1
1 Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139-4307, USA
2 Division of Applied Physics, Faculty of Pure and Applied Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
Appl. Phys. Lett. 103, 083508 (2013)
Surface treatment technique to reduce the resistance and to increase the uniformity of ohmic contacts in AlGaN/GaN high electron mobility transistors was developed using Samco ICP etch system.
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AlGaN/GaN Etch for GaN Power Device Fabrication