Author: Samco

27 Mar

Scientific paper on 200 nm-period grating Si deep etching (6 µm) by MIT Kavli Institute

Samco 2019 Customer, Samco Customer Publication

Progress in x-ray critical-angle transmission grating technology development

Ralf K. Heilmann,1 Alexander R. Bruccoleri,2 Jungki Song,1 Mark L. Schattenburg1
1MIT Kavli Institute for Astrophysics and Space Research (United States)
2Izentis LLC (United States)
Proc. SPIE 11119, Optics for EUV, X-Ray, and Gamma-Ray Astronomy IX, 1111913 (9 September 2019); https://doi.org/10.1117/12.2529354

Samco Si DRIE Equipment was used for 200 nm-period grating Si deep etching (6 µm).

24 Mar

Technical Report : New Etching and Deposition Approach for Trench-Type SiC MOSFET

Samco 2020 NEWS, NEWS, Technical Report Tags: , , , , ,

Introduction

Compared to the mainstream semiconductor Si, the wide bandgap semiconductor 4H-SiC has excellent material qualities including higher electrical breakdown strength and higher thermal conductivity.Therefore, 4H-SiC has been studied in recent years as a new material to improve miniaturization and energy saving in power devices. Currently, it is being developed not only for device fabrication but also for practical
applications in the automotive and power supply industries. SiC MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) are one example of commonly used 4H-SiC power devices that surpass Si power devices in terms of high voltage endurance, low on-resistance, and high-speed switching. Trench type SiC MOSFETs are being developed and have shown that they are capable of achieving a reduced on-resistance, which is highly demanded in current devices. We have been developing a trench etching process using plasma dry etching and deposition of the gate insulator using ALD (Atomic Layer Deposition) and PECVD (Plasma Enhanced Chemical Vapor Deposition). These processes are required for manufacturing trench type SiC MOSFETs.
In this paper, we will highlight the SiC trench etching and gate insulator deposition results.

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14 Jan

Visit Samco Booth at IEEE MEMS 2020

Samco 2020 Events, Events

The 33rd International Conference on Micro Electro Mechanical Systems
(IEEE MEMS 2020)

When:  18 – 22, 2020

Where: Vancouver Convention Centre, Canada

Booth: 12

Samco’s systems are highly regarded by researchers and manufacturers for their proven reliability and cost-effective solutions.  As we aim to expand further into the MEMS market, our booth will focus on the Deep Si Etching systems, as well as showcase the latest data for our Aqua Plasma® systems and more.

 

If you’re interested in meeting with us, contact us to make an appointment.

Come see Samco booth at IEEE MEMS 2020.