Scientific paper on micro-LEDs fabrication using GaN plasma etching from National Chiao Tung University
Superior characteristics of microscale light emitting diodes through tightly lateral oxide-confined scheme
Shen-Che Huang1, Heng Li1 Zhe-Han Zhang1 Hsiang Chen2 Shing-Chung Wang1 and Tien-Chang Lu1
1 Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta-Hsueh Rd., Hsinchu 30010, Taiwan
2 Department of Applied Materials and Optoelectronic Engineering, National Chi Nan University, 1 Ta-Hsueh Rd., Puli 54561, Taiwan
Appl. Phys. Lett. 110, 021108 (2017); doi: 10.1063/1.4973966
Micro-LED devices with oxide-refilled current apertures of different sizes were fabricated on sapphire substrates. Samco ICP-RIE etcher was used for aperture pattern transfer by GaN plasma etching with etching depth control.
Samco has dedicated to academic and industry customers for both research and production of LED devices by providing equipment and process technologies of plasma etching and PECVD. For more details on our process solutions for LED manufacturing, please visit the process solutions page below.
Patterned Sapphire Substrate & GaN Etch for HB LEDs
Also, our process data on sapphire (Al2O3) etching and GaN etching can be found here.
Sapphire Plasma Etching
GaN Plasma Etching
Scientific Paper on InGaN/GaN LED Using InGaN Plasma Etching by National Cheng Kung University, Taiwan
Piezoelectric effect on compensation of the quantum-confined Stark effect in InGaN/GaN multiple quantum wells based green light-emitting diodes
Sheng-Chieh Tsaia, b, Cheng-Hsueh Lub and Chuan-Pu Liua
a Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan
b Research Center, Genesis Photonics Incorporation, Tainan 74144, Taiwan
Nano Energy (2016)
Samco ICP etch system was used for InGaN plasma etching in quantum well structure fabrication.
Samco has plasma etching process knowledge of III-V compound semiconductor materials including GaN, GaAs, InP and more. Please visit our process data page for more details of our process capabilities.
Improving the Brightness and Reliability of InGaN/GaN Near Ultraviolet Light Emitting Diodes by Controlling the Morphology of the GaN Buffer Layer
S. C. Tsai, H. C. Fang, C. H. Lu and Y. L. Lai
National Cheng Kung University, Tainan, Taiwan
Journal of Display Technology (2016) (Volume:PP , Issue: 99 )
Samco ICP etch system at National Cheng Kung University was used for InGaN/GaN dry etching in UV LED fabrication.
For our process capabilities of GaN dry etching, please visit the process data page below.
GaN Dry Etching Process (RIE or ICP-RIE)
Improved Light Uniformity From Light-Emitting Diodes by Heterogeneous Microlenses and 3-D Printed Mold
Cheng-Han Chiang and Guo-Dung John Su
Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS (2015) 21, NO. 4
SAMCO UV-Ozone cleaner was used for wettability modulation of SU-8 microlens.
Patterning of light-extraction nanostructures on sapphire substrates using nanoimprint and ICP etching with different masking materials
Hao Chen, Qi Zhang and Stephen Y Chou
Nanostructure Laboratory, Department of Electrical Engineering, Princeton University, Princeton, NJ
Nanotechnology (2015) 26 085302 (8pp)
Samco ICP etching system, RIE-200iP was used for recipe optimization of sapphire nanopatterning to improve light extraction of LEDs.
For our process capabilities on Sapphire plasma etching, please visit the process data page below.
Sapphire Dry Etching Process (ICP-RIE)