Category: Power Devices

21 Jun

Scientific paper on diamond power device fabrication from NIMS, Japan

Samco 2017 Customer, Diamond Etch, Other Materials Etch, Power Devices, SAMCO Customer Publication

Deposition of TiO2/Al2O3 bilayer on hydrogenated diamond for electronic devices: Capacitors, field-effect transistors, and logic inverters

J. W. Liu1, M. Y. Liao1, M. Imura1, R. G. Banal1, and Y. Koide2
1 Research Center for Functional Materials, National Institute for Materials Science (NIMS), 1-1 Namiki,
Tsukuba, Ibaraki 305-0044, Japan
2 Research Network and Facility Services Division, NIMS, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
JOURNAL OF APPLIED PHYSICS 121, 224502 (2017)

Diamond-based power devices are expected to see emerging applications which require high breakdown voltage. In this paper, MOSFET, MOS capactors and MOS logic inverter were fabricated using hydro-generated diamond.
Plasma etching of H-diamond channel layer was performed using Samco RIE etcher, RIE-200NL. Samco offers several plasma etching systems for customers who actively working on diamond power device research. For more details of plasma etching systems for diamond etching, please visit the product pages below.

RIE Plasma Etcher
ICP Etcher

25 Oct

Scientific Paper on Diamond MOSFET Fabrication Using Diamond Plasma Etching by NIMS, Japan

Samco 2016 Customer, Diamond Etch, Other Materials Etch, Power Devices, SAMCO Customer Publication

Design and fabrication of high-performance diamond triple-gate field-effect transistors

Jiangwei Liu 1, Hirotaka Ohsato 2, Xi Wang 1, Meiyong Liao 3 & Yasuo Koide 4
1 International Center for Young Scientists, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan.
2 Nanofabrication Platform, NIMS, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan.
3 Optical and Electronic Materials Unit, NIMS, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan.
4 Research Network and Facility Services Division, NIMS, 1-2-1 Sengen, Tsukuba, Ibaraki, 305-0047, Japan.
Scientific Reports 6, Article number: 34757 (2016)

Diamond is considered to be a material for next-geneDiamond Periodic Tableration power semiconductor devices due to high thermal conductivity and breakdown voltage. In this research, triple-gate metal-oxide-semiconductor field-effect transistor (MOSFET) device was fabricated using a hydrogenated diamond (H-diamond) substrate. In device fabrication, Samco open-load Reactive Ion Etching (RIE) system at National Institute for Materials Science (NIMS) was used for diamond plasma etching to form a diamond mesa structure.

For our process capabilities of diamond plasma etching, please visit the process data page below.
Diamond Plasma Etching Process Data (RIE Etching & ICP Etching)
Also, for more information on process equipment which are suitable for diamond plasma etching, please visit the product page below,
Reactive Ion Etching (RIE) Systems
ICP Etching Systems

15 Jul

Scientific Paper on GaN MOSFET Fabrication Using SiO2 PECVD by University of Tokushima

Samco 2015 Customer, Power Devices, SAMCO Customer Publication, Silicon/Dielectrics PECVD, SiO2 PECVD

A self-aligned gate GaN MOSFET using an ICP-assisted low-temperature Ohmic process

Qingpeng Wang1,2, Ying Jiang1,2, Jiaqi Zhang1,2, Kazuya Kawaharada1, Liuan Li1, Dejun Wang2 and Jin-Ping Ao1
1 Institute of Technology and Science, the University of Tokushima, Tokushima 770-8506, Japan
2 School of Electronic Science and Technology, Dalian University of Technology, Dalian 116023, People’s Republic of China
Semicond. Sci. Technol. (2015) 30 075003

Samco PECVD system was used for gate oxide (SiO2) formation in GaN MOSFET fabrication.SiO2 Periodic Table

For our process solutions of GaN power device fabrication, please visit the page below.
AlGaN/GaN Etch for GaN Power Device Fabrication/

Also, SiO2 PECVD process data can be found in the page below.
SiO2 PECVD Process

01 Jun

Scientific Paper on GaN MOSFET Fabrication Using SiO2 PECVD by University of Tokushima

Samco 2015 Customer, Power Devices, SAMCO Customer Publication, Silicon/Dielectrics PECVD, SiO2 PECVD

Effects of recess process and surface treatment on the threshold voltage of GaN MOSFETs fabricated on a AlGaN/GaN heterostructure

Qingpeng Wang1,2, Ying Jiang1,2, Jiaqi Zhang1,2, Kazuya Kawaharada1, Liuan Li1, Dejun Wang2 and Jin-Ping Ao1
1 Institute of Technology and Science, University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan
2 School of Electronic Science and Technology, Dalian University of Technology, 2 Linggong Road, Ganjingzi District, Dalian 116024, People’s Republic of China
Semicond. Sci. Technol. (2015) 30 065004

Samco PECVD System was used for gate oxide formation in AlGaN/GaN MOSFET fabrication.

SiO2 Periodic Table
For our process capabilities of GaN power device fabrication, please visit the page below.
AlGaN/GaN Etch for GaN Power Device Fabrication

For more information on our SiO2 PECVD process capabilities, please visit the process data page below.
SiO2 PECVD Process Data

01 Jun

Scientific Paper on InGaAs MOSFETs Using InGaAs Plasma Etching from MIT

Samco 2015 Customer, Compound Semi Etch, InGaAs Etch, Power Devices, SAMCO Customer Publication

A CMOS-Compatible Fabrication Process for Scaled Self-Aligned InGaAs MOSFETs

Lin, J., D. A. Antoniadis, and J. A. del Alamo
presented at Compound Semiconductor Manufacturing Technology Conference (CS MANTECH), Scottsdale, AZ, May 18-21, 2015, pp. 239-242.

Samco ICP etching system, RIE-200iP was used for optimization of InGaAs/InAlAs/InP dry etching process.

Go to Prof. Jesús A. del Alamo Research Group Website

01 May

Scientific Paper on AlGaN/GaN HEMT from Tokyo Institute of Technology

Samco 2015 Customer, Compound Semi Etch, GaN Etch, Power Devices, SAMCO Customer Publication

Normally-off AlGaN/GaN high-electron-mobility transistor using digital etching technique

Ryota Yamanaka1, Toru Kanazawa1, Eiji Yagyu2 and Yasuyuki Miyamoto1
1 Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
2 Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan
Japanese Journal of Applied Physics (2015) 54, 06FG04

SAMCO Reactive Ion Etching System, RIE-10NR was used for fabrication of recessed gate structure of normally-off AlGaN/GaN high-electron-mobility transistor (HEMT).
Undercut issue in recess etching was resolved with the RIE process.

GaN Periodic Table

For our process solutions of GaN based power device fabrication, please visit the page below.
AlGaN/GaN Etch for GaN Power Device Fabrication

03 Sep

Scientific Paper on Field-plate Gate Fabrication from Fudan University, China

Samco 2014 Customer, Power Devices, SAMCO Customer Publication, Silicon/Dielectrics Etch, SiNx Etch

Nanofabrication of air-spaced field-plate gates with ultra-short footprint

Jinhai Shaoa, Jianpeng Liua, Junjie Lia, Sichao Zhanga, Bing-Rui Lua, W. Luand Yifang Chena
a State Key Lab of ASIC and System, School of Information Science and Engineering, Fudan University, Shanghai 200433, China
b Department of Electrical and Computer Engineering, Ohio State University, Columbus, OH 43210, USA
Microelectronic Engineering (2014) 143, 1, 11-14

Samco RIE System at Fudan University was used for SiNx plasma etching to fabricate short foot-print field-plate gates for GaN based high electron mobility transistors (HEMTs).

Periodic Table SiN

For our process solutions of GaN power device fabrication, please visit the page below.
AlGaN/GaN Etch for GaN Power Device Fabrication

08 Aug

Scientific Paper on AlGaN/GaN MOSFET from Dalian University of Technology and The University of Tokushima

Samco 2014 Customer, Power Devices, SAMCO Customer Publication, Silicon/Dielectrics PECVD, SiO2 PECVD

Process dependency on threshold voltage of GaN MOSFET on AlGaN/GaN heterostructure

Qingpeng Wanga, b, Ying , b, Takahiro Miyashitac, Shin-ichi Motoyamac, Liuan Lib, Dejun Wanga, Yasuo Ohnob and Jin-Ping Aob
a School of Electronic Science and Technology, Dalian University of Technology, 2 Linggong Road, Ganjingzi District, Dalian 116024, China
b Institute of Technology and Science, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan
c Research and Development Department, SAMCO Inc., 36 Waraya-cho, Takeda, Fushimi-ku, Kyoto 612-8443, Japan
Solid-State Electronics (2014) 99, Pages 59–64

Samco PECVD system was used for SiO2 insulation film deposition.
This paper is collaboration work of Dalian University of Technology, The University of Tokushima and Samco.

SiO2 Periodic Table
For more details of our SiO2 PECVD technologies, please visit the page below.
SiO2 PECVD Process

01 Jun

Scientific Paper on AlGaN/GaN MOSFET Using SiO2 PECVD from Dalian University of Technology Team

Samco 2014 Customer, Power Devices, SAMCO Customer Publication, Silicon/Dielectrics PECVD, SiO2 PECVD

Field isolation for GaN MOSFETs on AlGaN/GaN heterostructure with boron ion implantation

Y Jiang1,2, Q P Wang1,2, K Tamai2, L A Li2, S Shinkai3, T Miyashita4, S-I Motoyama4, D J Wang1,5, J-P Ao2,5 and Y Ohno2,6
1 School of Electronic Science and Technology, Dalian University of Technology, Dalian, Liaoning 116024, People’s Republic of China
2 Institute of Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan
3 Center for microelectronic system, Kyushu Institute of Technology, Fukuoka 820-8502, Japan
4 Research and Development Department, SAMCO Inc., Kyoto 612-8443, Japan
5 Author to whom any correspondence should be addressed.
6 Present address: e-Device, Inc., Sapporo 063-0801, Japan.
Semicond. Sci. Technol. (2014) 29 055002

Samco PECVD system was used for gate oxide formation in GaN power device fabrication. This paper is collaboration work of Dalian University of Technology, The University of Tokushima, Kyushu Institute of Technology and Samco.

SiO2 Periodic Table

For our process solutions of GaN power device fabrication, please visit the page below.
AlGaN/GaN Etch for GaN Power Device Fabrication

20 Sep

Scientific Paper on AlGaN/AlN/GaN HFETs Fabrication from Virginia Commonwealth University

Samco 2013 Customer, AlGaN Etch, Compound Semi Etch, GaN Etch, Power Devices, SAMCO Customer Publication

Microwave performance of AlGaN/AlN/GaN -based single and coupled channels HFETs

R. A. Ferreyra, X. Li, F. Zhang, C. Zhu, N. Izyumskaya, C. Kayis, V. Avrutin, Ü. Özgür, and H. Morkoç
Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, VA, USA 23284-3072
Proc. SPIE 8625, Gallium Nitride Materials and Devices VIII, 86252B (March 27, 2013)

SAMCO ICP Etch System at Virginia Commonwealth University was used for mesa isolation of AlGaN/AlN/GaN heterostructures.

GaN Periodic Table

For our process solutions for GaN power device fabrication, please visit the page below.
AlGaN/GaN Etch for GaN Power Device Fabrication

Also, for more information on our GaN plasma etching process capabilities, please visit the process data page below.
GaN Plasma Etching Process (RIE or ICP Etching)

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