Category: Power Devices
Low-frequency Noise Measurements of AlGaN/GaN Metal-oxide-semiconductor Heterostructure Field-effect Transistors with HfAlO Gate Dielectric
C. Kayis, J. H. Leach, C. Y. Zhu, M. Wu, X. Li, Ü. Özgür, H. Morkoç, . Yang, V. Misra, and P. H. Handel
Microelectronics Materials and Device Laboratory, Virginia Commonwealth University
In: IEEE Electron Device Letters, Vol. 31, No. 9, 5540258, 09.2010, p. 1041-1043.
Mesa isolation of AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) was performed using a SAMCO ICP Etch System RIE-101iPH using a Cl based chemistry.
Virginia Commonwealth University is one of Samco’s customers using our process equipment for AlGaN & GaN plasma etching process in device fabrication.
Virginia Commonwealth University Microelectronics Materials & Device Laboratory.
Samco offers process solutions for AlGaN/GaN power device fabrication using precise AlGaN & GaN plasma etching technologies and SiO2 PECVD technologies for an passivation layer deposition. For more details on the process solutions, please visit the page below.
AlGaN/GaN Etch for GaN Power Device Fabrication
J. H. Leach, M. Wu, X. Ni, X. Li, Ü . Ö zgür, and H. Morkoç
Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond VA, 23284, USA
Phys. Status Solidi A, 207: 211–216 (2009).
The field effect transistors were fabricated using Ti/Al/Ni/Au Ohmic contacts followed by etched mesa isolation in a Samco ICP Etch System RIE-101iPH using a Cl-based chemistry.
Virginia Commonwealth University is one of Samco customers using our ICP etch system for AlGaN and GaN plasma etching processes in GaN-based power device fabrication.
Virginia Commonwealth University Microelectronics Materials & Device Laboratory website