Category: Compound Semi Etch

19 Jan

Scientific paper on micro-LEDs fabrication using GaN plasma etching from National Chiao Tung University

SAMCO 2017 Customer, Compound Semi Etch, GaN Etch, LEDs, SAMCO Customer Publication

Superior characteristics of microscale light emitting diodes through tightly lateral oxide-confined scheme

Shen-Che Huang1, Heng Li1 Zhe-Han Zhang1 Hsiang Chen2 Shing-Chung Wang1 and Tien-Chang Lu1
1 Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta-Hsueh Rd., Hsinchu 30010, Taiwan
2 Department of Applied Materials and Optoelectronic Engineering, National Chi Nan University, 1 Ta-Hsueh Rd., Puli 54561, Taiwan
Appl. Phys. Lett. 110, 021108 (2017); doi: 10.1063/1.4973966

Micro-LED devices with oxide-refilled current apertures of different sizes were fabricated on sapphire substrates. Samco ICP-RIE etcher was used for aperture pattern transfer by GaN plasma etching with etching depth control.

Samco has dedicated to academic and industry customers for both research and production of LED devices by providing equipment and process technologies of plasma etching and PECVD. For more details on our process solutions for LED manufacturing, please visit the process solutions page below.
Patterned Sapphire Substrate & GaN Etch for HB LEDs
Also, our process data on sapphire (Al2O3) etching and GaN etching can be found here.
Sapphire Plasma Etching
GaN Plasma Etching
micro LED

24 Oct

Scientific Paper on AlGaN Plasma Etching by Virginia Commonwealth University

SAMCO 2016 Customer, AlGaN Etch, Compound Semi Etch, SAMCO Customer Publication

Surface photovoltage studies of p-type AlGaN layers after reactive-ion etching

J. D. McNamara 1, K. L. Phumisithikul 1, A. A. Baski1, J. Marini 2, F. Shahedipour-Sandvik 2, S. Das 3 and M. A. Reshchikov 1
1 Physics Department, Virginia Commonwealth University, Richmond, Virginia 23284, USA
2 Colleges of Nanoscale Science and Engineering, SUNY Polytechnic Institute, Albany, New York 12203, USA
3 Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, Virginia 23284, USA
J. Appl. Phys. 120, 155304 (2016)

Nanometer-scale plasma etching of Mg-doped, p-type AlxGa1−xN was performed to remove defective surface region, using Samco ICP-RIE etch system at Virginia Commonwealth University. With plasma etching process with chlorine chemistry, surface defects were successfully removed.AlGaN

Virginia Commonwealth University is one of Samco’s proprietary customers using our systems for AlGaN & GaN plasma etching in AlGaN/GaN device research.
For more details of our plasma etching technologies of GaN, please visit the process data page below.
GaN Plasma Etching Process Data
Also, for more details of our ICP-RIE etch systems, please visit the product page below.
ICP-RIE Etch Systems

05 Sep

Scientific Paper on InGaN/GaN LED Using InGaN Plasma Etching by National Cheng Kung University, Taiwan

SAMCO 2016 Customer, Compound Semi Etch, InGaN Etch, LEDs

Piezoelectric effect on compensation of the quantum-confined Stark effect in InGaN/GaN multiple quantum wells based green light-emitting diodes

Sheng-Chieh Tsaia, b, Cheng-Hsueh Lub and Chuan-Pu Liua
a Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan
b Research Center, Genesis Photonics Incorporation, Tainan 74144, Taiwan
Nano Energy (2016)

ingan plasma etching

Samco ICP etch system was used for InGaN plasma etching in quantum well structure fabrication.

Samco has plasma etching process knowledge of III-V compound semiconductor materials including GaN, GaAs, InP and more. Please visit our process data page for more details of our process capabilities.

Process Data by Materials

10 Aug

Scientific Paper on GaAs-based Phase-modulating Lasers

SAMCO 2016 Customer, Compound Semi Etch, GaAs Etch, Photonic Devices, SAMCO Customer Publication

Phase-modulating lasers toward on-chip integration

Yoshitaka Kurosaka, Kazuyoshi Hirose, Takahiro Sugiyama, Yu Takiguchi & Yoshiro Nomoto
Central Research Laboratory, Hamamatsu Photonics K.K., Shizuoka 434-8601, Japan.
Scientific Reports 6, Article number: 30138 (2016)
doi:10.1038/srep30138

Samco Load-lock ICP-RIE System was used for GaAs-based hole array fabrication in dry etching for phase-modulating laser fabrication.

gaas plasma etching

For our process examples and capabilities of GaAs plasma etching, please visit the process data page below.
GaAs Plasma Etching Process (ICP-RIE)

15 May

Scientific Paper on GaAs Plasma Etching over Tripodal Paraffinic Triptycene Mask from Tokyo Institute of Technology

SAMCO 2016 Customer, Compound Semi Etch, GaAs Etch, SAMCO Customer Publication

Chlorine-based inductively coupled plasma etching of GaAs wafer using tripodal paraffinic triptycene as an etching resist mask

Akihiro Matsutani1, Fumitaka Ishiwari2, Yoshiaki Shoji2, Takashi Kajitani2, Takuya Uehara3, Masaru Nakagawa3, and Takanori Fukushima2
1 Division of Microprocessing Technology Platform, Technical Department, Tokyo Institute of Technology, Yokohama 226-8503, Japan
2 Laboratory for Chemistry and Life Science, Institute of Innovative Research, Tokyo Institute of Technology, Yokohama 226-8503, Japan
3 IMRAM, Tohoku University, Sendai 980-8577, Japan
Japanese Journal of Applied Physics (2016) Volume 55, Number 6S1

Samco ICP etch system was used for GaAs plasma etching over tripodal paraffinic triptycene (TripC12) mask.
Based on chlorine gas plasma chemistry, vertical and smooth GaAs profile was achieved.

For our process capabilities of GaAs plasma etching, please visit the process data page below.
GaAs Dry Etching Process (ICP-RIE)

14 Mar

Scientific Paper on UV LED fabrication from National Cheng Kung University, Taiwan

SAMCO 2016 Customer, GaN Etch, LEDs, SAMCO Customer Publication

Improving the Brightness and Reliability of InGaN/GaN Near Ultraviolet Light Emitting Diodes by Controlling the Morphology of the GaN Buffer Layer

S. C. Tsai, H. C. Fang, C. H. Lu and Y. L. Lai
National Cheng Kung University, Tainan, Taiwan
Journal of Display Technology (2016) (Volume:PP , Issue: 99 )

Samco ICP etch system at National Cheng Kung University was used for InGaN/GaN dry etching in UV LED fabrication.
For our process capabilities of GaN dry etching, please visit the process data page below.
GaN Dry Etching Process (RIE or ICP-RIE)

19 Nov

Scientific Paper on GaAs Quantum Heterostructure From Columbia University Team

SAMCO 2015 Customer, AlGaAs Etch, Compound Semi Etch, GaAs Etch, Photonic Devices, SAMCO Customer Publication

Fabrication of artificial graphene in a GaAs quantum heterostructure

Diego Scarabelli, Sheng Wang, Aron Pinczuk, and Shalom J. Wind
Department of Applied Physics and Applied Mathematics, Columbia University, 500 W. 120th St., Mudd 200, MC 4701, New York, New York 10027
Yuliya Y. Kuznetsova
Department of Physics, Columbia University, 538 W. 120th St., 704 Pupin Hall MC 5255, New York, New York 10027
Loren N. Pfeiffer and Ken West
Department of Electrical Engineering, Princeton University, Olden Street, Princeton, New Jersey 08544
Geoff C. Gardner and Michael J. Manfra
Department of Physics and Astronomy, and School of Materials Engineering, and School of Electrical and Computer Engineering, Purdue University, 525 Northwestern Avenue, West Lafayette, Indiana 47907
Vittorio Pellegrini
Graphene Labs, Istituto Italiano di Tecnologia, Via Morego 30, I-16163 Genova, Italy and NEST,
Istituto Nanoscienze-CNR and Scuola Normale Superiore, Piazza San Silvestro 12, I-56127 Pisa, Italy
Journal of Vacuum Science & Technology B 33, 06FG03 (2015); doi: 10.1116/1.4932672

SAMCO ICP Etch System at Princeton University was used for anisotropic plasma etching of GaAs/AlGaAs to fabricate vertical quantum hetero-structures.

Periodic Table GaAs

For our process capabilities of GaAs dry etching, please visit the process data page below.
GaAs Dry Etching Process (ICP-RIE)

01 Jun

Scientific Paper on InGaAs MOSFETs Using InGaAs Plasma Etching from MIT

SAMCO 2015 Customer, Compound Semi Etch, InGaAs Etch, Power Devices, SAMCO Customer Publication

A CMOS-Compatible Fabrication Process for Scaled Self-Aligned InGaAs MOSFETs

Lin, J., D. A. Antoniadis, and J. A. del Alamo
presented at Compound Semiconductor Manufacturing Technology Conference (CS MANTECH), Scottsdale, AZ, May 18-21, 2015, pp. 239-242.

Samco ICP etching system, RIE-200iP was used for optimization of InGaAs/InAlAs/InP dry etching process.

Go to Prof. Jesús A. del Alamo Research Group Website

16 May

Scientific Paper on InP Microenclosure Array Fabrication Using InP Plasma Etching from Tokyo Institute of Technology

SAMCO 2015 Customer, Compound Semi Etch, InP Etch, Microfluidics, SAMCO Customer Publication

Single-Cell Isolation and Size Sieving Using Microenclosure Array for Microbial Analysis

Akihiro Matsutani* and Ayako Takada1
Semiconductor and MEMS Processing Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
1Biomaterial Analysis Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8501, Japan
Sensors and Materials, Volume 27, Number 5 (2015)

Samco open-load ICP etch system was used for fabrication of micropillar fabrication on InP substrates for cell isolation and size sieving.

InP Periodic Table
For more details of our InP plasma etching capabilities, please visit the page below.
InP Dry Etching Process (RIE or ICP-RIE)

01 May

Scientific Paper on AlGaN/GaN HEMT from Tokyo Institute of Technology

SAMCO 2015 Customer, Compound Semi Etch, GaN Etch, Power Devices, SAMCO Customer Publication

Normally-off AlGaN/GaN high-electron-mobility transistor using digital etching technique

Ryota Yamanaka1, Toru Kanazawa1, Eiji Yagyu2 and Yasuyuki Miyamoto1
1 Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
2 Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan
Japanese Journal of Applied Physics (2015) 54, 06FG04

SAMCO Reactive Ion Etching System, RIE-10NR was used for fabrication of recessed gate structure of normally-off AlGaN/GaN high-electron-mobility transistor (HEMT).
Undercut issue in recess etching was resolved with the RIE process.

GaN Periodic Table

For our process solutions of GaN based power device fabrication, please visit the page below.
AlGaN/GaN Etch for GaN Power Device Fabrication

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