Category: AlGaN Etch

24 Oct

Scientific Paper on AlGaN Plasma Etching by Virginia Commonwealth University

Samco 2016 Customer, AlGaN Etch, Compound Semi Etch, SAMCO Customer Publication

Surface photovoltage studies of p-type AlGaN layers after reactive-ion etching

J. D. McNamara 1, K. L. Phumisithikul 1, A. A. Baski1, J. Marini 2, F. Shahedipour-Sandvik 2, S. Das 3 and M. A. Reshchikov 1
1 Physics Department, Virginia Commonwealth University, Richmond, Virginia 23284, USA
2 Colleges of Nanoscale Science and Engineering, SUNY Polytechnic Institute, Albany, New York 12203, USA
3 Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, Virginia 23284, USA
J. Appl. Phys. 120, 155304 (2016)

Nanometer-scale plasma etching of Mg-doped, p-type AlxGa1−xN was performed to remove defective surface region, using Samco ICP-RIE etch system at Virginia Commonwealth University. With plasma etching process with chlorine chemistry, surface defects were successfully removed.AlGaN

Virginia Commonwealth University is one of Samco’s proprietary customers using our systems for AlGaN & GaN plasma etching in AlGaN/GaN device research.
For more details of our plasma etching technologies of GaN, please visit the process data page below.
GaN Plasma Etching Process Data
Also, for more details of our ICP-RIE etch systems, please visit the product page below.
ICP-RIE Etch Systems

20 Sep

Scientific Paper on AlGaN/AlN/GaN HFETs Fabrication from Virginia Commonwealth University

Samco 2013 Customer, AlGaN Etch, Compound Semi Etch, GaN Etch, Power Devices, SAMCO Customer Publication

Microwave performance of AlGaN/AlN/GaN -based single and coupled channels HFETs

R. A. Ferreyra, X. Li, F. Zhang, C. Zhu, N. Izyumskaya, C. Kayis, V. Avrutin, Ü. Özgür, and H. Morkoç
Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, VA, USA 23284-3072
Proc. SPIE 8625, Gallium Nitride Materials and Devices VIII, 86252B (March 27, 2013)

SAMCO ICP Etch System at Virginia Commonwealth University was used for mesa isolation of AlGaN/AlN/GaN heterostructures.

GaN Periodic Table

For our process solutions for GaN power device fabrication, please visit the page below.
AlGaN/GaN Etch for GaN Power Device Fabrication

Also, for more information on our GaN plasma etching process capabilities, please visit the process data page below.
GaN Plasma Etching Process (RIE or ICP Etching)

05 Aug

Scientific Paper on AlGaN/GaN Metal-oxide-semiconductor HFET from Virginia Commonwealth University

Samco 2010 Customer, AlGaN Etch, Compound Semi Etch, GaN Etch, Power Devices, SAMCO Customer Publication

Low-frequency Noise Measurements of AlGaN/GaN Metal-oxide-semiconductor Heterostructure Field-effect Transistors with HfAlO Gate Dielectric

C. Kayis, J. H. Leach, C. Y. Zhu, M. Wu, X. Li, Ü. Özgür, H. Morkoç, . Yang, V. Misra, and P. H. Handel
Microelectronics Materials and Device Laboratory, Virginia Commonwealth University
In: IEEE Electron Device Letters, Vol. 31, No. 9, 5540258, 09.2010, p. 1041-1043.

Mesa isolation of AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) was performed using a SAMCO ICP Etch System RIE-101iPH using a Cl based chemistry.

Virginia Commonwealth University is one of Samco’s customers using our process equipment for AlGaN & GaN plasma etching process in device fabrication.
Virginia Commonwealth University Microelectronics Materials & Device Laboratory.

gan etching

Samco offers process solutions for AlGaN/GaN power device fabrication using precise AlGaN & GaN plasma etching technologies and SiO2 PECVD technologies for an passivation layer deposition. For more details on the process solutions, please visit the page below.
AlGaN/GaN Etch for GaN Power Device Fabrication

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