Category: Compound Semi Etch

01 May

Scientific Paper on AlGaN/GaN HEMT from Tokyo Institute of Technology

Samco 2015 Customer, Compound Semi Etch, GaN Etch, Power Devices, SAMCO Customer Publication

Normally-off AlGaN/GaN high-electron-mobility transistor using digital etching technique

Ryota Yamanaka1, Toru Kanazawa1, Eiji Yagyu2 and Yasuyuki Miyamoto1
1 Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
2 Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan
Japanese Journal of Applied Physics (2015) 54, 06FG04

SAMCO Reactive Ion Etching System, RIE-10NR was used for fabrication of recessed gate structure of normally-off AlGaN/GaN high-electron-mobility transistor (HEMT).
Undercut issue in recess etching was resolved with the RIE process.

GaN Periodic Table

For our process solutions of GaN based power device fabrication, please visit the page below.
AlGaN/GaN Etch for GaN Power Device Fabrication

10 Jun

Scientific Paper on InGaAs Nanowire Fabrication Using InGaAs Plasma Etching from MIT

Samco 2014 Customer, Compound Semi Etch, InGaAs Etch, SAMCO Customer Publication

Nanometer-Scale Vertical-Sidewall Reactive Ion Etching of InGaAs for 3-D III-V MOSFETs

Xin Zhao and Jesús A. del Alamo
Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, MA 02139 USA
IEEE ELECTRON DEVICE LETTERS (2014) 35, 5

Samco ICP etch system was used for fabrication of InGaAs nanowires. The nanowires showed vertical and smooth sidewalls by optimization of the etch recipe.
Massachusetts Institute of Technology (MIT) is one of the proprietary customers of Samco plasma etching systems. They use our process equipment for plasma etching of III-V materials such as GaN, GaAs and InGaAs in various device projects.

InGaAs Periodic Table

For our process capabilities of GaAs plasma etching, please visit the page below.
GaAs Dry Etching Process (ICP-RIE)

12 Mar

Scientific Paper on GaAs Plasma Etching from MIT

Samco 2014 Customer, Compound Semi Etch, GaAs Etch, SAMCO Customer Publication

Inductively coupled plasma reactive ion etching of GaAs wafer pieces with enhanced device yield

Michael K. Connors, Leo J. Missaggia, William S. Spencer and George W. Turner
Lincoln Laboratory, Massachusetts Institute of Technology, 244 Wood Street, Lexington, Massachusetts 02420
J. Vac. Sci. Technol. B 32, 021207 (2014)

SAMCO ICP Etching System, RIE-200iP was used for process investigation of GaAs plasma etching.

Periodic Table GaAs

For more details of our GaAs plasma etching technologies, please visit the page below.
GaAs Dry Etching Process (ICP-RIE)

14 Jan

Scientific Paper on Terahertz Quantum Cascade Lasers Using GaAs Dry Etch from Paul-Drude-Institut für Festkörperelektronik, Germany

Samco 2014 Customer, AlGaAs Etch, Compound Semi Etch, GaAs Etch, Photonic Devices, SAMCO Customer Publication

High-temperature, continuous-wave operation of terahertz quantum-cascade lasers with metal-metal waveguides and third-order distributed feedback

M. Wienold, B. Röben, L. Schrottke, R. Sharma, A. Tahraoui, K. Biermann and H. T. Grahn
Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5–7, 10117 Berlin, Germany
Opt Express. (2014) 22 (3):3334-48
SAMCO ICP Etch System is used for fabrication of GaAs/AlGaAs terahertz quantum-cascade lasers (THz QCLs).

Periodic Table GaAs

For more details of our GaAs dry etch capabilities, please visit the page below.
GaAs Dry Etching Process (ICP-RIE)

13 Oct

Scientific Paper on Fabrication of InP Photonic Crystal Waveguide from Tsinghua University, China

Samco 2013 Customer, Compound Semi Etch, InP Etch, Photonic Devices, SAMCO Customer Publication

Fabrication of high-aspect-ratio double-slot photonic crystal waveguide in InP heterostructure by inductively coupled plasma etching using ultra-low pressure

Kaiyu Cui, Yongzhuo Li, Xue Feng, Yidong Huang and Wei Zhang
Department of Electronic Engineering, Tsinghua National Laboratory for Information Science and Technology, Tsinghua University, Beijing 100084, China
AIP ADVANCES (2013) 3, 022122

InP photonic crystal waveguide was fabricated using SAMCO ICP Etch System.

InP Periodic Table

For more details of our InP dry etching process capabilities, please visit the page below.
InP Dry Etching Process (RIE or ICP-RIE)

20 Sep

Scientific Paper on AlGaN/AlN/GaN HFETs Fabrication from Virginia Commonwealth University

Samco 2013 Customer, AlGaN Etch, Compound Semi Etch, GaN Etch, Power Devices, SAMCO Customer Publication

Microwave performance of AlGaN/AlN/GaN -based single and coupled channels HFETs

R. A. Ferreyra, X. Li, F. Zhang, C. Zhu, N. Izyumskaya, C. Kayis, V. Avrutin, Ü. Özgür, and H. Morkoç
Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, VA, USA 23284-3072
Proc. SPIE 8625, Gallium Nitride Materials and Devices VIII, 86252B (March 27, 2013)

SAMCO ICP Etch System at Virginia Commonwealth University was used for mesa isolation of AlGaN/AlN/GaN heterostructures.

GaN Periodic Table

For our process solutions for GaN power device fabrication, please visit the page below.
AlGaN/GaN Etch for GaN Power Device Fabrication

Also, for more information on our GaN plasma etching process capabilities, please visit the process data page below.
GaN Plasma Etching Process (RIE or ICP Etching)

19 Feb

Scientific Paper on GaAs/AlGaAs Plasma Etching Process Development from MIT

Samco 2013 Customer, AlGaAs Etch, Compound Semi Etch, GaAs Etch, SAMCO Customer Publication

Chamber conditioning process development for improved inductively coupled plasma reactive ion etching of GaAs/AlGaAs materials

Michael K. Connors, Jason J. Plant, Kevin G. Ray, and George W. Turner
Lincoln Laboratory, Massachusetts Institute of Technology
J. Vac. Sci. Technol. B 31, 021207 (2013)

SAMCO ICP Etching System, RIE-200iP was used for GaAs plasma etching process investigation.

Periodic Table GaAs

For more details of our GaAs plasma etching capabilities, please visit the page below.
GaAs Dry Etching Process (ICP-RIE)

07 May

Scientific Paper on Quantum-Cascade Laser Using GaAs Dry Etching by Paul-Drude-Institut

Samco 2012 Customer, AlGaAs Etch, Compound Semi Etch, GaAs Etch, Photonic Devices, SAMCO Customer Publication

Lateral distributed-feedback gratings for single-mode, high-power terahertz quantum-cascade lasers

M. Wienold, A. Tahraoui, L. Schrottke, R. Sharma, X. Lü, K. Biermann, R. Hey, and H. T. Grahn
Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany
Optics Express Vol.20, Issue 10, pp. 11207-11217 (2012)

SAMCO ICP Etching System was used for GaAs/AlGaAs dry etching over SiO2 mask in fabrication of Terahertz quantum-cascade lasers (THz QCLs).

Periodic Table GaAs

For our capabilities of GaAs dry etching, please visit the process data page below.
GaAs Dry Etching Process (ICP-RIE)

25 Dec

Scientific Paper on Photonic Crystal Laser Fabrication Using InP Plasma Etching by Yokohama National University

Samco 2011 Customer, Compound Semi Etch, InP Etch, Photonic Devices, SAMCO Customer Publication

Photonic Crystal Point-Shift Nanolasers With and Without Nanoslots—Design, Fabrication, Lasing, and Sensing Characteristics

Shota Kita, Kengo Nozaki, Shoji Hachuda, Hideki Watanabe, Yuji Saito, Shota Otsuka, Takeharu Nakada, Yoshiki Arita, and Toshihiko Baba
Department of Electrical and Computer Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya-ku, Yokohama 240-8501, Japan
IEEE Journal of Selected Topics in Quantum Electronics, (2011) 17, 6

SAMCO ICP Etch System was used for recipe optimization of InP plasma etching. InP etch profile with a high aspect-ratio was successfully fabricated.

InP Periodic Table

For our process capabilities of InP plasma etching, please visit the page below.
InP Dry Etching Process (RIE or ICP-RIE)

28 Nov

Scientific Paper on GaSb Dry Etching Process Development by MIT Team

Samco 2011 Customer, Compound Semi Etch, GaSb Etch, SAMCO Customer Publication

Investigating GaSb(001) Dry Etching by ICP-RIE on a non-Silicon Containing Sample Holder with no Organic Gases

Hamad A. Albrithen1, Gale S. Petrich2, Leslie A. Kolodziejski3, Abdelmajid Salhi4 and Abdulrahman A. Almuhanna4
1 Physics and Astronomy, KAIN, King Saud University, Riyadh, Riyadh, Saudi Arabia.
2 Research Laboratory of Electronics, MIT, Cambridge, Massachusetts.
3 Department of Electrical Engineering and Computer Science, MIT, Cambridge, Massachusetts.
4 National Center for Nano Technology Research, King Abdulaziz City for Science and Technology, Riyadh, Riyadh, Saudi Arabia.
MRS Proceedings 2012 1396, mrsf11-1396-o07-33
doi:10.1557/opl.2012.775.

gasb etching

GaSb plasma etching process over SiO2 mask was investigated using Samco ICP etch system.
Anisotropic GaSb etching with smooth sidewalls were achieved with the recipe optimization.

For more details of our GaSb plasma etching capabilities, please visit the process data page below.
GaSb Plasma Etching

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