Category: Compound Semi Etch

05 Aug

Scientific Paper on AlGaN/GaN Metal-oxide-semiconductor HFET from Virginia Commonwealth University

Samco 2010 Customer, AlGaN Etch, Compound Semi Etch, GaN Etch, Power Devices, SAMCO Customer Publication

Low-frequency Noise Measurements of AlGaN/GaN Metal-oxide-semiconductor Heterostructure Field-effect Transistors with HfAlO Gate Dielectric

C. Kayis, J. H. Leach, C. Y. Zhu, M. Wu, X. Li, Ü. Özgür, H. Morkoç, . Yang, V. Misra, and P. H. Handel
Microelectronics Materials and Device Laboratory, Virginia Commonwealth University
In: IEEE Electron Device Letters, Vol. 31, No. 9, 5540258, 09.2010, p. 1041-1043.

Mesa isolation of AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) was performed using a SAMCO ICP Etch System RIE-101iPH using a Cl based chemistry.

Virginia Commonwealth University is one of Samco’s customers using our process equipment for AlGaN & GaN plasma etching process in device fabrication.
Virginia Commonwealth University Microelectronics Materials & Device Laboratory.

gan etching

Samco offers process solutions for AlGaN/GaN power device fabrication using precise AlGaN & GaN plasma etching technologies and SiO2 PECVD technologies for an passivation layer deposition. For more details on the process solutions, please visit the page below.
AlGaN/GaN Etch for GaN Power Device Fabrication

13 Oct

Scientific Paper on High Quality InAlN/AlN/GaN HFET from Virginia Commonwealth University

Samco 2009 Customer, Compound Semi Etch, GaN Etch, Power Devices, SAMCO Customer Publication

Effect of lattice mismatch on gate lag in high quality InAlN/AlN/GaN HFET structures

J. H. Leach, M. Wu, X. Ni, X. Li, Ü . Ö zgür, and H. Morkoç
Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond VA, 23284, USA
Phys. Status Solidi A, 207: 211–216 (2009).

The field effect transistors were fabricated using Ti/Al/Ni/Au Ohmic contacts followed by etched mesa isolation in a Samco ICP Etch System RIE-101iPH using a Cl-based chemistry.

Virginia Commonwealth University is one of Samco customers using our ICP etch system for AlGaN and GaN plasma etching processes in GaN-based power device fabrication.
Virginia Commonwealth University Microelectronics Materials & Device Laboratory website

28 Oct

Scientific Paper on GaSb Dry Etching Process Development by University of Delaware

Samco 2008 Customer, Compound Semi Etch, GaSb Etch, SAMCO Customer Publication

Inductively coupled plasma etching of III–V antimonides in BCl3/SiCl4 etch chemistry

K. Swaminathan⁎, P.E. Janardhanan, O.V. Sulima
Department of Electrical and Computer Engineering, University of Delaware, Newark, Delaware 19716, USA
Thin Solid Films (2008) 516, Issue 23, 1 October 2008, Pages 8712–8716

Inductively coupled plasma etching process of GaSb was investigated using Samco ICP etch system.
Etch rate of 4 μm/min was achieved over photoresist mask.

For more information on our ICP etch systems, please visit the product page below.
ICP Plasma Etcher

gasb dry etching

13 Jul

Scientific Paper on GaInAsP/InP Photonic Crystal Lasers Using InP Etching by Yokohama National University

Samco 2003 Customer, Compound Semi Etch, InP Etch, Photonic Devices, SAMCO Customer Publication

Fabrication of GaInAsP/InP photonic crystal lasers by ICP etching and control of resonant mode in point and line composite defects

Kyoji Inoshita and Toshihiko Baba
Department of Electrical & Computer Engineering, Yokohama National University, Japan
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS (2003) 9, NO. 5, SEPTEMBER/OCTOBER

Samco ICP plasma etcher was used for InP plasma etching in GaInAsP/InP photonic crystal laser fabrication.

inp etching
For more details on our InP plasma etching technologies, please visit the process data page below.
InP Plasma Etching

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