Category: Other Materials Etch
Enhancement-mode hydrogenated diamond metal-oxide-semiconductor field-effect transistors with Y2O3 oxide insulator grown by electron beam evaporator
J. W. Liu1 H. Oosato2 M. Y. Liao1 and Y. Koide3
1 Research Center for Functional Materials, National Institute for Materials Science (NIMS), 1-1 Namiki,
Tsukuba, Ibaraki 305-0044, Japan
2 Nanofabrication Platform, NIMS, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
3 Research Network and Facility Services Division, NIMS, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
APPLIED PHYSICS LETTERS 110, 203502 (2017)
Hydrogenated diamond-based MOSFET is a promising next-generation power device as well as SiC- or GaN-based devices. The device research on this material is still under development.
In this paper, H-diamond MOSFET with an Y2O3 oxide insulator was fabricated. Samco RIE etcher, RIE-200NL was used for mesa etching of H-diamond layer.
Samco RIE etchers offer diamond plasma etching process solutions for emerging power device research communities. For more details on our equipment lineup and specifications, please visit the product page below.
RIE Etcher for R&D and Production
If you are interested in diamond etching processes, please visit the process data page below.
Diamond Plasma Etching
A novel PMMA/NEB bilayer process for sub-20 nm gold nanoslits by a selective electron beam lithography and dry etch
Xiaqi Huanga, Jinhai Shaoa, ChialinTsoua, Sichao Zhanga, Bingrui Lua, Ling Haob, Yan Sunc, and Yifang Chena
a Nanolithogrophy and Application Research Group, State Key Lab of ASIC and System, School of Information Science and Engineering, Fudan University, Shanghai 200433, China
b National Physical Laboratory, Teddington TW11 0LW, UK
c National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China
Microelectronic Engineering (2017) 172, Pages 13-18
Gold nanoslit structures were fabricated using process parameter optimization of electron beam lithography and dry etching. Samco plasma etcher RIE-10NR was used for dry etching of PMMA layer in oxygen plasma treatment.
Takeshi Kondoa, b, c, Keita Yajimaa, Tsuyoshi Katoa, Masahiro Okanod, Chiaki Terashimab, c, Tatsuo Aikawaa, Masanori Hayaseb, d, Makoto Yuasaa, b, c
a Department of Pure and Applied Chemistry, Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510, Japan
b Research Institute for Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510, Japan
c ACT-C/JST, 4-1-8 Honcho, Kawaguchi, Saitama 333-0012, Japan
d Department of Mechanical Engineering, Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510, Japan
Diamond and Related Materials (2016)
A boron-doped diamond (BDD) electrode with a large specific surface area was fabricated. The combination of thermal treatment and whisker formation by diamond plasma etching was employed for nano-texturing of diamond surfaces. Samco open-load Reactive Ion Etcher, RIE-10NR was used for diamond plasma etching process.
For more details of our diamond plasma etching technologies and capabilities, please visit the process data page below.
Diamond Plasma Etching (RIE and ICP Etch)
Scientific Paper on Polymer Waveguide Modulator Fabrication Using TiO2 Plasma Etching from Kyushu University Team
Feng Qiu1 Hiroki Miura2, Andrew M. Spring1, Jianxun Hong1, Daisuke Maeda3, Masa-aki Ozawa3, Keisuke Odoi3 and Shiyoshi Yokoyama1,2
1 Institute for Materials Chemistry and Engineering, Kyushu University, 6-1 Kasuga-koen Kasuga-city, Fukuoka 816-8580, Japan
2 Department of Molecular and Material Sciences, Kyushu University, 6-1 Kasuga-koen Kasuga-city, Fukuoka 816-8580, Japan
3 Nissan Chemical Industries, Ltd., 2-10-1 Tuboi Nishi, Funabashi, Chiba 274-8507, Japan
Appl. Phys. Lett. (2016) 109, 173301
Waveguide modulator device using organic electro-optic (EO) materials was studied in this research. Samco ICP plasma etcher was used for slot structure formation for TiO2 plasma etching in fluorine chemistry during device fabrication.
Jiangwei Liu 1, Hirotaka Ohsato 2, Xi Wang 1, Meiyong Liao 3 & Yasuo Koide 4
1 International Center for Young Scientists, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan.
2 Nanofabrication Platform, NIMS, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan.
3 Optical and Electronic Materials Unit, NIMS, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan.
4 Research Network and Facility Services Division, NIMS, 1-2-1 Sengen, Tsukuba, Ibaraki, 305-0047, Japan.
Scientific Reports 6, Article number: 34757 (2016)
Diamond is considered to be a material for next-generation power semiconductor devices due to high thermal conductivity and breakdown voltage. In this research, triple-gate metal-oxide-semiconductor field-effect transistor (MOSFET) device was fabricated using a hydrogenated diamond (H-diamond) substrate. In device fabrication, Samco open-load Reactive Ion Etching (RIE) system at National Institute for Materials Science (NIMS) was used for diamond plasma etching to form a diamond mesa structure.
For our process capabilities of diamond plasma etching, please visit the process data page below.
Diamond Plasma Etching Process Data (RIE Etching & ICP Etching)
Also, for more information on process equipment which are suitable for diamond plasma etching, please visit the product page below,
Reactive Ion Etching (RIE) Systems
ICP Etching Systems
Scientific Paper on Nanostructure Fabrication Using a Carbon Nanotube Template From Korea University
Ju Yeon Woo1, Hyo Han1, Ji Weon Kim1, Seung-Mo Lee2, Jeong Sook Ha3, Joon Hyung Shim1 and Chang-Soo Han1
1 School of Mechanical Engineering, Korea University Anam-Dong, Seongbuk-Gu, Seoul 136-713, Korea
2 Department of Nanomechanics, Nano-Convergence Mechanical Systems Research Division, Korea Institute of Machinery & Materials (KIMM), 156 Gajungbuk-ro, Yuseong-gu, Daejeon 305-343, Korea
3 Department of Chemical & Biological Engineering, Korea University Anam-Dong, Seongbuk-Gu, Seoul 136-713, Korea
Nanotechnology (2016) 27 265301 (7pp)
Samco RIE system was used for removal of single-walled carbon nanotubes (CNT) in an oxygen plasma.
Faculty of Materials Science and Engineering, Kyoto Institute of Technology, Sakyo-ku, Kyoto, Japan
Polymer International 2016
Samco ICP etch system was used for PDMS mold fabrication to etch away UV-curable photoresist.
Sub-70 nm resolution patterning of high etch-resistant epoxy novolac resins using gas permeable templates in ultraviolet nanoimprint lithography
Satoshi Takei and Makoto Hanabata
Toyama Prefectural University, Imizu, Toyama 939-0398, Japan
Appl. Phys. Express (2016) 9 056501
Samco tabletop Reactive Ion Etching (RIE) System was used for evaluation of resist materials on plasma etch selectivity. Resin etching process was performed using fluorine chemistry.
Shunsuke Murai, Koji Fujita, Yohei Daido, Ryuichiro Yasuhara, Ryosuke Kamakura, and Katsuhisa Tanaka
Shunsuke Murai1,2 Koji Fujita1,3> Yohei Daido1 Ryuichiro Yasuhara1 Ryosuke Kamakura1 and Katsuhisa Tanaka1
1 Department of Material Chemistry, Graduate School of Engineering, Kyoto University, Katsura, Nishikyo-ku, Kyoto 615-8510, Japan.
Optics Express Vol. 24, Issue 2, pp. 1143-1153 (2016) •doi: 10.1364/OE.24.001143
Titanium Nitiride (TiN) nanoparticle arrays were fabricated using nanoimprint technologies.
For nanoimprint mold fabrication, Samco deep silicon etching system at Kyoto University was used for nanostructure fabrication on silicon molds. After transferring of the silicon mold pattern to photoresist on TiN substrate, Samco ICP etching system at Kyoto University was used for TiN dry etching over photoresist to fabricate TiN nanoparticle arrays.
Lan Zhang1, Jian Lu1, Hirofumi Nogami1, 2, Hironao Okada2, Toshihiro Itoh1, 3
1 Research Center for Ubiquitous MEMS and Micro Engineering (UMEMSME), National Institute of Advanced Industrial Science and Technology (AIST)
2 Department of Mechanical Engineering, Kyushu University
3 Department of Human and Engineered Environmental Studies, the University of Tokyo
IEEJ Transactions on Sensors and Micromachines (2016) 136, No. 11 P 482-487
A PH sensor was fabricated combining a metal-oxide-semiconductor field-effect transistor (MOSFET) with a separate sensing electrode made of indium tin oxide (ITO) film. Samco RIE etch system was used for plasma etching of an amorphous fluoropolymer CYTOP fluoropolymer film in device fabrication.