Category: Other Materials Etch
Scientific Paper on High-aspect-ratio Nanoimprinted Structure Fabrication from National Tsing Hua University
Zhi-Hao Xu1, Chien-Li1, Cheng-Kuo1, Sheng-Ching3 and Tsung-Shune Chin2
1 Department of Power Mechanical Engineering, National Tsing Hua University, Hsinchu 30013, TAIWAN
2 Department of Materials Science & Engineering, Feng Chia University, Taichung 40724, TAIWAN
3 Department of Mechanical Engineering, National United University, Miaoli 36003, TAIWAN
Microsystem Technologies (2014) 20, 10, pp 1949-1953
SAMCO Plasma Cleaner was used for photoresist stripping/trimming in high-aspect-ratio structure.
For more details of our photoresist stripping & removal process solutions, please visit the page below.
Plasma Ashing & Stripping of Photoresist
Makoto Ohkado1, Tsuyoshi Nomura1, Atushi Miura1, Hisayoshi Fujikawa1, Naoki Ikeda2, Yoshimasa Sugimoto2 and Shinji Nishiwaki3
1Toyota Central R&D Labs. Inc., 41-1 Yokomichi, Nagakute, Aichi 480-1192, Japan
2National Institute for Material Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
3Kyoto University, Yoshida Honmachi, Sakyo-ku, Kyoto, Kyoto 606-8501, Japan
Transactions of the Materials Research Society of Japan (2013) 38, No. 2 p. 167-170
For more details of our SiO2 dry etching capabilities, please visit the page below.
SiO2 Dry Etching Process (RIE or ICP-RIE)
Mariana C. Prado1, Deep Jariwala2, Tobin J. Marks2,3 and Mark C. Hersam2,3
1 Departamento de Física, Universidade Federal de Minas Gerais, Av. Antônio Carlos, 6627, 31270-901 Belo Horizonte, Brazil
2 Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, USA
3 Department of Chemistry, Northwestern University, Evanston, Illinois 60208, USA
Appl. Phys. Lett. (2013) 102, 193111
Samco RIE System at Northwestern University was used for investigation of reactive ion etching process of graphene.
Samco RIE systems are versatile tools for plasma etching of various materials including Si, SiO2, SiNx, metal, polymer and carbon-based materials.
For more information on our RIE system, please visit the product page below.
RIE Etching Systems
Scientific Paper on Pb(Zr,Ti)O 3 thin film based resonators Using PZT Plasma Etching from Beihang University
Monolithic integration of Pb(Zr,Ti)O3 thin film based resonators using a complete dry microfabrication process
Yonggang Jiang1 , Kensuke Kanda2,3, Yuki Iga2, Takayuki Fujita2,3, Kohei Higuchi2, Kazusuke Maenaka2,3
1 School of Mechanical Engineering and Automation, Beihang University, Xueyuan Road No. 37, Haidian District, Beijing, 100191, China
2 Maenaka Human-Sensing Fusion Project, ERATO, Japan Science and Technology Agency, 2167 Shosha, Himeji, Hyogo, 671-2280, Japan
3 Graduate School of Engineering, University of Hyogo, 2167 Shosha, Himeji, Hyogo, 671-2280, Japan
Microsyst Technol (2013) 19:137–142
SAMCO ICP etch system was used for PZT plasma etching to fabricate thin film MEMS resonators.
Yan Xuana Xu Guoa Yushuang Cuia Changsheng Yuana Haixiong Gea Bo Cuib and Yanfeng Chena
a National Laboratory of Solid State Microstructures, Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Nanjing University, Nanjing, 210093, China
b Department of Electrical and Computer Engineering, University of Waterloo, 200 University Avenue, West Waterloo, Ontario N2L3G1, Canada
Soft Matter (2012) 8, 9603
SAMCO RIE Plasma Etching System was used for plasma etching of silicon-containing resist and PMMA to fabricate wrinkled films.
Scientific Paper on AlN Nanocavity Fabrication Using AlN Plasma Etching from the University of Tokyo
S. Sergent1, M. Arita1, S. Kako1, K. Tanabe1, S. Iwamoto1,2 and Y. Arakawa1,2
1 Institute for Nano Quantum Information Electronics, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
2 Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
Appl. Phys. Lett. 101, 101106 (2012)
AlN nanopattern was fabricated by AlN plasma etching using Samco ICP etch system to improve the quality factor of nanobeam cavities.
For more information on our ICP etching sytems, please visit the product page below.
Samco ICP Plasma Etcher
Fabrication of Vertically Aligned Diamond Whiskers from Highly Boron-Doped Diamond by Oxygen Plasma Etching
Chiaki Terashima1, Kazuki Arihara4, Sohei Okazaki4, Tetsuya Shichi4, Donald A. Tryk5, Tatsuru Shirafuji2, Nagahiro Saito1, 2, 3, Osamu Takai1, 2, 3, and Akira Fujishima4, 6
1 Research Center for Materials Backcasting Technology, Graduate School of Engineering, and 2Department of Materials, Physics and Energy Engineering, Graduate School of Engineering, 3 EcoTopia Science Institute, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
4 Technology Research and Development Department, General Technology Division, Central Japan Railway, 1545-33 Ohyama, Komaki City, Aichi 485-0801, Japan
5 Fuel Cell Nanomaterials Center, University of Yamanashi, 4-3-11 Takeda, Kofu, Yamanashi 400-8511, Japan
6 Tokyo University of Science, 1-3 Kagurazaka, Shinjyuku-ku, Tokyo 162-8601, Japan
ACS Appl. Mater. Interfaces, 2011, 3 (2), pp 177–182
Samco open-load RIE Plasma Etching System was used for diamond plasma etching to fabricate vertically aligned diamond whiskers.
For more details of our diamond plasma etching technologies, please visit the diamond process data page below.
Diamond Dry Etching Process (RIE or ICP-RIE)
Takayuki Wakayama, Takashi Suemasu, Tomomi Kanazawa and Hiroyuki Akinaga
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
Jpn. J. Appl. Phys. (2006) 45 L569
Samco ICP-RIE etcher was used for plasma etch recipe development of β-FeSi2 on a silicon substrate using fluorine chemistry.
High etch selectivity of β-FeSi2 against silicon was investigated.
Please visit our product page for more details of our ICP plasma etch systems.
ICP Plasma Etch Systems for Si, SiO2, III-V & Metal