Category: TiN Etch
Scientific Paper on TiN on Si hybrid-plasmonic-photonic waveguide from Virginia Commonwealth University
A Platform for CMOS Compatible Plasmonics: High Plasmonic Quality Titanium Nitride Thin Films on Si (001) with an MgO Interlayer
Kai Ding 1, Dhruv Fomra 1, Alexander V. Kvit 2, Hadis Morkoç 1, Nathaniel Kinsey 1, Ümit Özgür 1 and Vitaliy Avrutin 1
1 Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, Virginia, 23284 USA
2 Materials Science Center, University of Wisconsin‐Madison, Madison, WI, 53706 USA
Advanced Photonics Research, 2000210 (2021)
A CMOS compatible hybrid-plasmonic-photonic waveguide was fabricated using TiN layer deposited by PEALD on Si (001) substrate with MgO interlayer. Samco ICP-RIE system RIE-101iPH was used for TiN/Au etching in chlorine chemistry and also Si etching in fluorine chemistry.
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ICP-RIE Etch Systems
Shunsuke Murai, Koji Fujita, Yohei Daido, Ryuichiro Yasuhara, Ryosuke Kamakura, and Katsuhisa Tanaka
Shunsuke Murai1,2 Koji Fujita1,3> Yohei Daido1 Ryuichiro Yasuhara1 Ryosuke Kamakura1 and Katsuhisa Tanaka1
1 Department of Material Chemistry, Graduate School of Engineering, Kyoto University, Katsura, Nishikyo-ku, Kyoto 615-8510, Japan.
Optics Express Vol. 24, Issue 2, pp. 1143-1153 (2016) •doi: 10.1364/OE.24.001143
Titanium Nitiride (TiN) nanoparticle arrays were fabricated using nanoimprint technologies.
For nanoimprint mold fabrication, Samco deep silicon etching system at Kyoto University was used for nanostructure fabrication on silicon molds. After transferring of the silicon mold pattern to photoresist on TiN substrate, Samco ICP etching system at Kyoto University was used for TiN dry etching over photoresist to fabricate TiN nanoparticle arrays.