Category: SAMCO Customer Publication

21 May

Scientific paper on hydrogenated diamond MOSFET by NIMS, Japan

SAMCO 2017 Customer, Diamond Etch, Other Materials Etch, SAMCO Customer Publication

Enhancement-mode hydrogenated diamond metal-oxide-semiconductor field-effect transistors with Y2O3 oxide insulator grown by electron beam evaporator

J. W. Liu1 H. Oosato2 M. Y. Liao1 and Y. Koide3
1 Research Center for Functional Materials, National Institute for Materials Science (NIMS), 1-1 Namiki,
Tsukuba, Ibaraki 305-0044, Japan
2 Nanofabrication Platform, NIMS, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
3 Research Network and Facility Services Division, NIMS, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
APPLIED PHYSICS LETTERS 110, 203502 (2017)

Hydrogenated diamond-based MOSFET is a promising next-generation power device as well as SiC- or GaN-based devices. The device research on this material is still under development.
In this paper, H-diamond MOSFET with an Y2O3 oxide insulator was fabricated. Samco RIE etcher, RIE-200NL was used for mesa etching of H-diamond layer.

Samco RIE etchers offer diamond plasma etching process solutions for emerging power device research communities. For more details on our equipment lineup and specifications, please visit the product page below.
RIE Etcher for R&D and Production

If you are interested in diamond etching processes, please visit the process data page below.
Diamond Plasma Etching

RIE plasma etcher

16 May

Scientific paper on crystalline silicon array from Chinese Academy of Sciences

SAMCO 2017 Customer, SAMCO Customer Publication, Si Etch, Silicon/Dielectrics Etch, Solar Cell

Thin crystalline silicon with double-sided nano-hole array fabricated by soft UV-NIL and RIE

Min Wang1,2, Yulian Zhang1, Linfeng Lu1, Dongdong Li1 and Xufei Zhu3
1 Shanghai Advanced Research Institute, Chinese Academy of Sciences, 99 Haike Road, Zhangjiang Hi-Tech Park, Pudong, Shanghai 201210, People’s Republic of China
2 University of Chinese Academy of Sciences, Beijing 100039, People’s Republic of China
3 School of Chemical Engineering, Nanjing University of Science and Technology, Nanjing 210094, People’s Republic of China
Mater. Res. Express (2017) 4 055005

Crystalline silicon nano-hole array was fabricated using UV nanoimprint (UV-NIL) technology for potential silicon solar cell applications. Samco RIE ether, RIE-10NR was used in device fabrication for photoresist ashing and silicon plasma etching processes. Nano-hole array structures were successfully fabricated.

For more details of Samco RIE etcher lineup, please visit the product page below.
RIE Plasma Etcher
We provide several systems to meet each customer’s process requirements in plasma etching processes.

RIE plasma etcher

31 Mar

Scientific paper on micro-scale corral fabrication by Princeton University

SAMCO 2017 Customer, SAMCO Customer Publication, Si DRIE, Silicon/Dielectrics Etch

Bacterial population solitary waves can defeat rings of funnels

Ryan J Morris1, Trung V Phan2, Matthew Black3, Ke-Chih Lin4, Ioannis G Kevrekidis5, Julia A Bos3 and Robert H Austin2
1 School of Physics & Astronomy, University of Edinburgh, Edinburgh EH9 3FD, United Kingdom
2 Department of Physics, Princeton University, Jadwin Hall, Princeton, NJ 08544, United States of America
3 Lewis-Sigler Institute for Integrative Genomics, Princeton, NJ 08544 United States of America
4 Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, United States of America
5 Department of Chemical and Biological Engineering and PACM, Princeton University, Princeton, NJ 08544, United States of America
New Journal of Physics (2017) Volume 19 035002

Circular corral for bacteria made of rings of concentric funnels was fabricated. Nanoslits were etched on a silicon wafer using Samco Deep RIE Tool RIE-800iPB at Princeton University.

Samco offers a couple of silicon Deep RIE systems for R&D and production. Please see the product page below.
Silicon Deep RIE Systems

Also, for more details of Samco silicon deep RIE process capabilities, please visit the process solution page below.
Slicon Deep RIE Technology for MEMS and TSV Processing

deep rie system

27 Mar

Scientific paper on amorphous silicon oxide film deposition by Tokyo City University

SAMCO 2017 Customer, a-Si PECVD, SAMCO Customer Publication, Silicon/Dielectrics PECVD

Effects of epitaxial growth on the optimum condition of intrinsic amorphous silicon oxide buffer layers for silicon heterojunction solar cells

He Zhanga, Kazuyoshi Nakadab, Makoto Konagaia, c
a MEXT/FUTURE-PV Innovation Research, Japan Science and Technology Agency (JST), 2-2-9 Machiike-dai, Koriyama, Fukushima 963-0298, Japan
b Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1-NE-15 Ookayama, Meguro-ku, Tokyo 152-8552, Japan
c Advanced Research Laboratories, Tokyo City University, 8-15-1, Todoroki, Setagaya-ku, Tokyo 158-0082, Japan

Thin Solid Films (2017) 628 pp 214–220

Samco PECVD tool PD-2203L was used for deposition of amorphous silicon oxide buffer layer for silicon solar cell application. Excellent film properties of surface passivation were achieved. For more details of our PECVD lineup and capabilities, please visit the product pages below.

Anode PECVD Systems for High Quality Film Deposition of SiO2, SiNx and aSi
Cathode PECVD Systems for High-speed SiO2 and SiNx Deposition

01 Mar

Scientific Paper on Gold Nanoslit Fabrication Using PMMA Etching from Fudan University Team

SAMCO 2017 Customer, Other Materials Etch, PMMA Etch, SAMCO Customer Publication

A novel PMMA/NEB bilayer process for sub-20 nm gold nanoslits by a selective electron beam lithography and dry etch

Xiaqi Huanga, Jinhai Shaoa, ChialinTsoua, Sichao Zhanga, Bingrui Lua, Ling Haob, Yan Sunc, and Yifang Chena
a Nanolithogrophy and Application Research Group, State Key Lab of ASIC and System, School of Information Science and Engineering, Fudan University, Shanghai 200433, China
b National Physical Laboratory, Teddington TW11 0LW, UK
c National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China
Microelectronic Engineering (2017) 172, Pages 13-18

Gold nanoslit structures were fabricated using process parameter optimization of electron beam lithography and dry etching. Samco plasma etcher RIE-10NR was used for dry etching of PMMA layer in oxygen plasma treatment.

25 Feb

Scientific paper on phototransistor fabrication using PECVD SiO2 by National Cheng Kung University

SAMCO 2017 Customer, SAMCO Customer Publication, Silicon/Dielectrics PECVD, SiO2 PECVD

High Responsivity MgZnO Ultraviolet Thin-Film Phototransistor Developed Using Radio Frequency Sputtering

Jyun-Yi Li, Sheng-Po Chang *, Ming-Hung Hsu and Shoou-Jinn Chang
Department of Electrical Engineering and Advanced Optoelectronic Technology Center, Institute of Microelectronics, National Cheng Kung University, Tainan 701, Taiwan
Materials 2017, 10(2), 126

Ultraviolet phototransistors were fabricated using Mg-doped ZnO film to achieve high mobility, a fast on–off transition, and high responsivity under deep UV illumination. Samco PECVD equipment PD-220NA was used for 200 nm thick SiO2 film deposition as a dielectric layer.

Samco offers high-speed SiO2 and SiNx film deposition technologies for various device applications. Also, we provide low-temperature PECVD (under 80°C) for device fabrication using heat-sensitive materials.
For more details of the plasma deposition process capabilities, please visit the process solution page below.
High-speed SiO2 and SiNx Deposition
Low-temperature SiO2 and SiNx PECVD Process

22 Feb

Scientific Paper on Microfluidic Chip Fabrication Using Silicon Deep RIE from Vietnam National University

SAMCO 2017 Customer, Microfluidics, SAMCO Customer Publication, Si DRIE, Silicon/Dielectrics Etch

Fabrication of 25 μm-filter microfluidic chip on silicon substrate

Nguyen Ngan Le1,2, Kim Khanh Huynh1, Thi Cam Hue Phan1, Thi My Dung Dang1 and Mau Chien Dang1
1 Laboratory for Nanotechnology, Vietnam National University in Ho Chi Minh City, Community 6, Linh
Trung Ward, Thu Duc District, Ho Chi Minh, Vietnam
2 University of Science, Vietnam National University in Ho Chi Minh City, 227 Nguyen Van Cu Street,
District 5, Ho Chi Minh City, Vietnam
Adv. Nat. Sci.: Nanosci. Nanotechnol. 8 (2017) 015003

A microfluidic chip device was fabricated using deep silicon etching technology of the Bosch Process. Samco Deep RIE Tool RIE-200iPB was used for silicon etching over silver hard mask. With optimization of process recipe in the silicon etching, vertical silicon channel profile was fabricated.


For more details of our deep RIE process capabilities, please visit the pages below.
Silicon DRIE (Deep Reactive Ion Etching) for MEMS and TSV
Deep Silicon Trench/Via Hole/Pillar Etching using the Bosch Process

25 Jan

Scientific paper on polymer waveguide fabrication from Kyushu University

SAMCO 2017 Customer, Photonic Devices, SAMCO Customer Publication, Si Etch, Silicon/Dielectrics Etch

Low driving voltage Mach-Zehnder interference modulator constructed from an electro-optic polymer on ultra-thin silicon with a broadband operation

1 Department of Molecular and Material Sciences, Kyushu University, 6-1 Kasuga-koen Kasuga-city, Fukuoka 816-8580, Japan
2 Institute for Materials Chemistry and Engineering, Kyushu University, 6-1 Kasuga-koen Kasuga-city, Fukuoka 816-8580, Japan
3 Nissan Chemical Industries LTD. 488-6 Suzumi-cho, Funabashi, Chiba 274-0052, Japan
Optics Express Vol. 25, Issue 2, pp. 768-775 (2017)

An electro-optic (EO) polymer waveguide using an ultra-thin silicon hybrid was fabricated. A 50 nm-thick silicon layer was deposited on SiO2 substrates using Samco plasma CVD system, PD-220NL. Then, the silicon layer was patterned as the Mach-Zehnder interferometer using Samco deep silicon plasma etching system, RIE-400iPB.

For more details of our silicon etching process capabilities, please visit the process data page below.
Silicon Plasma Etching Data

silicon plasma etching

19 Jan

Scientific paper on micro-LEDs fabrication using GaN plasma etching from National Chiao Tung University

SAMCO 2017 Customer, Compound Semi Etch, GaN Etch, LEDs, SAMCO Customer Publication

Superior characteristics of microscale light emitting diodes through tightly lateral oxide-confined scheme

Shen-Che Huang1, Heng Li1 Zhe-Han Zhang1 Hsiang Chen2 Shing-Chung Wang1 and Tien-Chang Lu1
1 Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta-Hsueh Rd., Hsinchu 30010, Taiwan
2 Department of Applied Materials and Optoelectronic Engineering, National Chi Nan University, 1 Ta-Hsueh Rd., Puli 54561, Taiwan
Appl. Phys. Lett. 110, 021108 (2017); doi: 10.1063/1.4973966

Micro-LED devices with oxide-refilled current apertures of different sizes were fabricated on sapphire substrates. Samco ICP-RIE etcher was used for aperture pattern transfer by GaN plasma etching with etching depth control.

Samco has dedicated to academic and industry customers for both research and production of LED devices by providing equipment and process technologies of plasma etching and PECVD. For more details on our process solutions for LED manufacturing, please visit the process solutions page below.
Patterned Sapphire Substrate & GaN Etch for HB LEDs
Also, our process data on sapphire (Al2O3) etching and GaN etching can be found here.
Sapphire Plasma Etching
GaN Plasma Etching
micro LED

02 Jan

Scientific Paper on Plasma Surface Oxidation of In2O3 by Paul-Drude-Institut

SAMCO 2016 Customer, In2O3, Plasma Treatment, SAMCO Customer Publication, Surface Treatment

Consequences of plasma oxidation and vacuum annealing on the chemical properties and electron accumulation of In2O3 surfaces

Theresa Berthold1, Julius Rombach2 Thomas Stauden1 Vladimir Polyakov3
Volker Cimalla3 Stefan Krischok1 Oliver Bierwagen2 and Marcel Himmerlich1
1 Institut fur Mikro- und Nanotechnologien MacroNano, Technische Universit€at Ilmenau, PF 100565, 98684 Ilmenau, Germany
2 Paul-Drude-Institut fur Festk€orperelektronik, Hausvogteiplatz 5–7, 10117 Berlin, Germany
3 Fraunhofer-Institut fur Angewandte Festk€orperphysik, Tullastraße 72, 79108 Freiburg, Germany
Journal of Applied Physics 120, 245301 (2016)

Indium Oxide (In2O3) is used for metal contacts of electronic devices. It is known that defects (oxygen vacancies) and impurities (adsorbates) of In2O3 films change electron concentration. In previous papers, surface treatment techniques using plasma technologies were investigated to reduce the defects and impurities of In2Ofilms.

In this paper, Samco ICP plasma etching tool at Paul-Drude-Institut was used for plasma surface oxidation of In2O3, and the samples were treated by subsequent vacuum annealing. It was found that oxygen plasma treatment reduced adsorbed carbon impurities and removed surface defect states, attributed to oxygen vacancies.