Category: 2014 Customer

01 Jun

Scientific Paper on AlGaN/GaN MOSFET Using SiO2 PECVD from Dalian University of Technology Team

Samco 2014 Customer, Power Devices, Samco Customer Publication, Silicon/Dielectrics PECVD, SiO2 PECVD

Field isolation for GaN MOSFETs on AlGaN/GaN heterostructure with boron ion implantation

Y Jiang1,2, Q P Wang1,2, K Tamai2, L A Li2, S Shinkai3, T Miyashita4, S-I Motoyama4, D J Wang1,5, J-P Ao2,5 and Y Ohno2,6
1 School of Electronic Science and Technology, Dalian University of Technology, Dalian, Liaoning 116024, People’s Republic of China
2 Institute of Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan
3 Center for microelectronic system, Kyushu Institute of Technology, Fukuoka 820-8502, Japan
4 Research and Development Department, SAMCO Inc., Kyoto 612-8443, Japan
5 Author to whom any correspondence should be addressed.
6 Present address: e-Device, Inc., Sapporo 063-0801, Japan.
Semicond. Sci. Technol. (2014) 29 055002

Samco PECVD system was used for gate oxide formation in GaN power device fabrication. This paper is collaboration work of Dalian University of Technology, The University of Tokushima, Kyushu Institute of Technology and Samco.

SiO2 Periodic Table

For our process solutions of GaN power device fabrication, please visit the page below.
AlGaN/GaN Etch for GaN Power Device Fabrication

18 May

Scientific Paper on Silicon Photonic Device Fabrication Using Silicon Plasama Etching by University of Delaware

Samco 2014 Customer, Photonic Devices, Samco Customer Publication, Si Etch, Silicon/Dielectrics Etch

A Widely Tunable Narrow Linewidth RF Source Integrated in a Heterogeneous Photonic Module

David W. Grund, Garrett A. Ejzak, Garrett J. Schneider, Janusz Murakowski and Dennis W. Prather
Dept. of Electr. & Comput. Eng., Univ. of Delaware, Newark, DE, USA
Journal of Lightwave Technology (2014) 32, 7, pp. 1363-1369

Silicon Periodic Table

SAMCO ICP Etch System was used for silicon plasma etching in silicon-photonic integrated circuit fabrication.
For more details of our silicon plasma etching capabilities, please visit the page below.
Si Dry Etching Process (RIE, ICP-RIE or XeF2 Etch)

12 Mar

Scientific Paper on GaAs Plasma Etching from MIT

Samco 2014 Customer, Compound Semiconductor Etching, GaAs Etch, Samco Customer Publication

Inductively coupled plasma reactive ion etching of GaAs wafer pieces with enhanced device yield

Michael K. Connors, Leo J. Missaggia, William S. Spencer and George W. Turner
Lincoln Laboratory, Massachusetts Institute of Technology, 244 Wood Street, Lexington, Massachusetts 02420
J. Vac. Sci. Technol. B 32, 021207 (2014)

SAMCO ICP Etching System, RIE-200iP was used for process investigation of GaAs plasma etching.

Periodic Table GaAs

For more details of our GaAs plasma etching technologies, please visit the page below.
GaAs Dry Etching Process (ICP-RIE)

19 Feb

Scientific Paper on ZnO Nanorods Functionalization from Linköping University, Sweden

Samco 2014 Customer, Plasma Treatment, Samco Customer Publication, Surface Treatment, ZnO

The improved piezoelectric properties of ZnO nanorods with oxygen plasma treatment on the single layer graphene coated polymer substrate

Mushtaque Hussain, Mazhar Ali Abbasi, Zafar Hussain Ibupoto, Omer Nur and Magnus Willander
Physical Electronic & Nanotechnology division, Department of Science &Technology, Campus Norrköping, Linköping University, SE-60174 Norrköping, Sweden.
physica status solidi (a) Volume 211, Issue 2, pages 455–459, February 2014

ZnO Periodic Table

ZnO nanorods were treated with an oxygen plasma using SAMCO RIE Plasma Etching System to reduce the defect levels.

14 Jan

Scientific Paper on Terahertz Quantum Cascade Lasers Using GaAs Dry Etch from Paul-Drude-Institut für Festkörperelektronik, Germany

Samco 2014 Customer, AlGaAs Etch, Compound Semiconductor Etching, GaAs Etch, Photonic Devices, Samco Customer Publication

High-temperature, continuous-wave operation of terahertz quantum-cascade lasers with metal-metal waveguides and third-order distributed feedback

M. Wienold, B. Röben, L. Schrottke, R. Sharma, A. Tahraoui, K. Biermann and H. T. Grahn
Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5–7, 10117 Berlin, Germany
Opt Express. (2014) 22 (3):3334-48
SAMCO ICP Etch System is used for fabrication of GaAs/AlGaAs terahertz quantum-cascade lasers (THz QCLs).

Periodic Table GaAs

For more details of our GaAs dry etch capabilities, please visit the page below.
GaAs Dry Etching Process (ICP-RIE)