Category: 2015 Customer
Kenichi Maruyama1, Kosuke Sawabe2, Tomo Sakanoue1, Jinpeng Li1, Wataru Takahashi1, Shu Hotta3, Yoshihiro Iwasa4 & Taishi Takenobu1
1Department of Applied Physics, Graduate School of Advanced Science and Engineering, Waseda University, Tokyo 169-8555, Japan.
2Department of Physics, Graduate School of Science, Tohoku University, Sendai 980-8578, Japan.
3Faculty of Materials Science and Engineering Kyoto Institute of Technology, Kyoto 606-8585, Japan.
4Quantum-Phase Electronics Center and Department of Applied Physics, The University of Tokyo, Tokyo 113-8656, Japan, RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198, Japan.
Scientific Reports 5, Article number: 10221 (2015)
Samco ICP etcher was used for dry etching of UV-curable resist and α,ω-bis(biphenylyl)terthiophene (BP3T) single-crystal in UV-nanoimprint lithography process for electrically driven organic laser fabrication.
Matsui, Y., Hirai, Y., Tsuchiya, T. and Tabata, O.
Dept. of Micro Eng., Kyoto Univ., Kyoto, Japan
Presented at 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS) at Anchorage, AK.
Samco Silicon DRIE System at Kyoto University was used for deep silicon etching in MEMS device fabrication.
Our process examples and capabilities of deep silicon etching can be found in the page below.
Deep Silicon Trench/Via Hole Etching using Bosch Process
Kyoto University is one of the proprietary customers of Samco silicon DRIE System for MEMS device fabrication.
Qingpeng Wang1,2, Ying Jiang1,2, Jiaqi Zhang1,2, Kazuya Kawaharada1, Liuan Li1, Dejun Wang2 and Jin-Ping Ao1
1 Institute of Technology and Science, the University of Tokushima, Tokushima 770-8506, Japan
2 School of Electronic Science and Technology, Dalian University of Technology, Dalian 116023, People’s Republic of China
Semicond. Sci. Technol. (2015) 30 075003
Samco PECVD system was used for gate oxide (SiO2) formation in GaN MOSFET fabrication.
For our process solutions of GaN power device fabrication, please visit the page below.
AlGaN/GaN Etch for GaN Power Device Fabrication/
Also, SiO2 PECVD process data can be found in the page below.
SiO2 PECVD Process
Electrophoretic displays driven by all-oxide thin-film transistor backplanes fabricated using a solution process
Satoshi Inoue, Tue Trong Phan, Tomoko Hori, Hiroaki Koyama and Tatsuya Shimoda
Green Device Research Center, Japan Advanced Institute of Science and Technology, Ishikawa 923-1211, Japan
physica status solidi (a) Volume 212, Issue 10, pages 2133–2140, October 2015
Samco ICP etching system was used for plasma etching of the Ruthenium Oxide (RuO2), Zr-In-Zn-O (ZIZO), Silicon Dioxide (SiO2) and Indium Tin Oxide (ITO) films.
Our process capabilites of SiO2 dry etching can be found in the page below.
SiO2 Dry Etching Process (RIE or ICP-RIE)
Sakon Rahong1,2, Takao Yasui2,3, Takeshi Yanagida4, Kazuki Nagashima4, Masaki Kanai4,
Gang Meng4, Yong He4, Fuwei Zhuge4, Noritada Kaji2,3, Tomoji Kawai4 & Yoshinobu Baba1,2,3,5
1 Institute of Innovation for Future Society, Nagoya University, JAPAN.
2 FIRST Research Center for Innovative Nanobiodevices, Nagoya University, JAPAN.
3 Department of Applied Chemistry, Graduate School of Engineering, Nagoya University, JAPAN.
4 The Institute of Scientific and Industrial Research, Osaka University, JAPAN.
5 Health Research Institute, National Institute of Advanced Industrial Science and. Technology (AIST), JAPAN.
Scientific Reports 5, Article number: 10584 (2015) doi:10.1038/srep10584
SAMCO Reactive Ion Etching System RIE-10NR was used for SiO2 plasma etching over Cr mask. This process is used for micro-channel fabrication on microfluidic system which enables ultra-fast separation of biomolecules (DNA, Protein and RNA Molecules).
For our process examples and capabilities of SiO2 plasma etching, please visit the process data page below.
SiO2 Dry Etching Process (RIE or ICP-RIE)
Scientific Paper on Silicon Waveguide and THz Antenna Fabrication by Swinburne Univ. of Technology, Australia
A. Balcytis1,2,3, G. Seniutinas1,2, D. Urbonas1,3, M. Gabalis3 K. Vaskevicius3, R. Petruskevicius3, G. Molis4, G. Valusis5 and S. Juodkazis1,2
1 Centre for Micro-Photonics and Industrial Research Institute Swinburne, Faculty of Engineering and Industrial Sciences, Swinburne University of Technology, Hawthorn, VIC 3122, Australia
2 Melbourne Centre for Nanofabrication, 151 Wellington Road, Clayton, VIC 3168, Australia
3 Institute of Physics, Center for Physical Sciences and Technology, 231 Savanoriu Avenue, LT-02300 Vilnius, Lithuania
4 Teravil Ltd, Vilnius, LT 01108, Lithuania
5 Semiconductor Physics Institute, Center for Physical Science and Technology, 11 A. Gostauto st., LT01108 Vilnius, Lithuania
Proc. SPIE 9446, Ninth International Symposium on Precision Engineering Measurement and Instrumentation, 94461G (March 6, 2015); doi:10.1117/12.2180814
SOI waveguide was fabricated using Samco ICP etch system for plasma etching of silicon against Cr mask.
For our process examples of silicon plasma etching, please visit the page below.
Si Dry Etching Process (RIE, ICP-RIE or XeF2 Etch)
Scientific Paper on Silicon Solar Cells from Japan Science and Technology and Tokyo Institute of Technology
High-performance a-Si1–xOx:H/c-Si heterojunction solar cells realized by the a-Si:H/a-Si1–xOx:H stack buffer layer
He Zhang1, Kazuyoshi Nakada2, Shinsuke Miyajima2 and Makoto Konagai1,2
Phys. Status Solidi RRL (2015) 9: 225–229.
1 MEXT/FUTURE-PV Innovation Research, Japan Science and Technology (JST), Koriyama, Fukushima, Japan
2 Department of Physical Electronics, Tokyo Institute of Technology, Meguro-ku, Tokyo, Japan
Samco PECVD system was used for silicon thin film deposition in solar cell fabrication.
Scientific Paper on MEMS Device Fabrication Using SiO2 Plasma Etching by Kyoto Institute of Technology
Buckling behavior of piezoelectric diaphragms for highly sensitive structures of ultrasonic microsensors controlled through intrinsic stress of PZT films
Yamashita, K.; Arai, K.; Tanaka, H.; Nishiumi, T.; Noda, M.
Graduate School of Science & Technology, Kyoto Institute of Technology, Kyoto, Japan
presented at Applications of Ferroelectric, International Symposium on Integrated Functionalities and Piezoelectric Force Microscopy Workshop (ISAF/ISIF/PFM), 2015 Joint IEEE International Symposium on the , vol., no., pp.44-47, 24-27 May 2015
SAMCO silicon DRIE system at Kyoto Institute of Technology was used for Silicon Dioxide (SiO2) dry etching.
Our DRIE systems are equipped with SiO2 etch kit for high-speed SiO2 plasma etching. For more details, please visit our product page below.
Silicon Deep Reactive Ion Etching (DRIE) Systems
Also, for our process capabilities of SiO2 plasma etching, please visit the process data page below.
SiO2 Plasma Etching Process Data (RIE or ICP Etch)
Lin, J., D. A. Antoniadis, and J. A. del Alamo
presented at Compound Semiconductor Manufacturing Technology Conference (CS MANTECH), Scottsdale, AZ, May 18-21, 2015, pp. 239-242.
Samco ICP etching system, RIE-200iP was used for optimization of InGaAs/InAlAs/InP dry etching process.
Scientific Paper on InP Microenclosure Array Fabrication Using InP Plasma Etching from Tokyo Institute of Technology
Akihiro Matsutani* and Ayako Takada1
Semiconductor and MEMS Processing Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
1Biomaterial Analysis Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8501, Japan
Sensors and Materials, Volume 27, Number 5 (2015)
Samco open-load ICP etch system was used for fabrication of micropillar fabrication on InP substrates for cell isolation and size sieving.
For more details of our InP plasma etching capabilities, please visit the page below.
InP Dry Etching Process (RIE or ICP-RIE)