Category: 2015 Customer
Scientific Paper on Gene Transfer System Fabrication Using Polystyrene Plasma Treatment by Waseda University Team
Area-Specific Cell Stimulation via Surface-Mediated Gene Transfer Using Apatite-Based Composite Layers
Yushin Yazaki 1,2, Ayako Oyane 2, Yu Sogo3, Atsuo Ito3, Atsushi Yamazaki1 and Hideo Tsurushima 2,4
1 Department of Resources and Environmental Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555, Japan
2 Nanomaterials Research Institute, National Institute of Advanced Industrial Science and Technology, Central 4, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562, Japan
3 Health Research Institute, National Institute of Advanced Industrial Science and Technology, Central 6, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8566, Japan
4 Department of Neurosurgery, Faculty of Medicine, University of Tsukuba, 1-1-1 Tennoudai, Tsukuba, Ibaraki 305-8575, Japan
Int. J. Mol. Sci. 2015, 16(4), 8294-8309
Samco bench-top RIE etcher was used for plasma treatment of polystyrene substrates before coating with amorphous calcium phosphate (ACP).
Swift heavy ion irradiation induced microstructural modification and evolution of photoluminescence from Si rich a-SiNx:H
R K Bommali1, S Ghosh1, G Vijaya Prakash1, D Kanjilal2, P Mondal3, A K Srivastava3 and P Srivastava1
1 Nanostech and Nanophotonics Laboratories, Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110 016, India
2 Materials Science Division, Inter-University Accelerator Centre (IUAC), Aruna Asaf Ali Marg, New Delhi 110067, India
3 Indus Synchrotron Utilisation Division, Raja Ramanna Centre for Advanced Technology, Indore 452 013, India
Mater. Res. Express (2015) 2 046204
SAMCO PECVD system was used for silicon film deposition.
Ryota Yamanaka1, Toru Kanazawa1, Eiji Yagyu2 and Yasuyuki Miyamoto1
1 Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
2 Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan
Japanese Journal of Applied Physics (2015) 54, 06FG04
SAMCO Reactive Ion Etching System, RIE-10NR was used for fabrication of recessed gate structure of normally-off AlGaN/GaN high-electron-mobility transistor (HEMT).
Undercut issue in recess etching was resolved with the RIE process.
For our process solutions of GaN based power device fabrication, please visit the page below.
AlGaN/GaN Etch for GaN Power Device Fabrication
Scientific Paper on Plasma Treatment of PEEK for Better Adhesion with TiO2 Coating from Chubu University
Takashi Kizuki, Tomiharu Matsushita and Tadashi Kokubo
Department of Biomedical Sciences, College of Life and Health Sciences, Chubu University, 1200 Matsumoto-cho, Kasugai, Aichi 487-8501, Japan
J Mater Sci: Mater Med (2015) 26:41
A method for Polyetheretherketone (PEEK) surface treatment was investigated to achieve better adhesion with TiO2 film coating for biomedical applications. Oxygen plasma treatment of PEEK using Samco system improved adhesion between the material surface and TiO2 due to increase of oxygen-containing chemical functional groups on the surface.
Scientific Paper on Microfluidics Fabrication Using PDMS Plasma Treatment from Kent State University
Shuojia Shi and Hiroshi Yokoyama
Liquid Crystal Institute, Kent State University, Kent, Ohio 44242, United States
Langmuir, 2015, 31 (15), pp 4429–4434
SAMCO Bench-top RIE Plasma Etching System was used for surface activation and bonding of PDMS and glass in microfluidic device fabrication.
Scientific Paper on Nitrogen Plasma Surface Modification for Graphene Oxide Patterning by Toyo University, Japan
N2-Plasma-Assisted One-Step Alignment and Patterning of Graphene Oxide on a SiO2/Si Substrate Via the Langmuir–Blodgett Technique
Neha Chauhan, Vivekanandan Palaninathan, Sreejith Raveendran, Aby Cheruvathoor Poulose, Yoshikata Nakajima, Takashi Hasumura, Takashi Uchida, Tatsuro Hanajiri, Toru Maekawa and D. Sakthi Kumar
Bio-Nano Electronics Research Centre, Graduate School of Interdisciplinary New Science, Toyo University, Kawagoe, Saitama, Japan
Advanced Materials Interfaces 2015 2 (5)
Samco basic plasma research kit was used for surface modification of SiO2/Si in nitrogen plasma for selective placement and patterning of monolayer Graphene Oxide.
Scientific Paper on TiO2 Surface Photocatalysis Research Using UV-Ozone Treatment by Peking University
Ran-ran Fenga,b, An-an Liua,b, Shuo Liua,b, Jiao-jian Shia,b, Yi Liua,b and Ze-feng Rena,b
a International Center for Quantum Materials (ICQM) and School of Physics, Peking University, Beijing 100871, China
b Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
Chin. J. Chem. Phys. 28, 11 (2015)
Feng Qiu, Andrew M. Spring, and Shiyoshi Yokoyama*
Institute for Materials Chemistry and Engineering, Kyushu University, 6-1 Kasuga-koen Kasuga-city, Fukuoka, 816-8580, Japan
ACS Photonics (2015) 2, 3 pp 405–409
Samco PECVD system was used for Si3N4 deposition to fabricate a ring resonator.
For more details of our SiNx PECVD process capabilities, please visit the page below.
SiNx PECVD Process
Patterning of light-extraction nanostructures on sapphire substrates using nanoimprint and ICP etching with different masking materials
Hao Chen, Qi Zhang and Stephen Y Chou
Nanostructure Laboratory, Department of Electrical Engineering, Princeton University, Princeton, NJ
Nanotechnology (2015) 26 085302 (8pp)
Samco ICP etching system, RIE-200iP was used for recipe optimization of sapphire nanopatterning to improve light extraction of LEDs.
For our process capabilities on Sapphire plasma etching, please visit the process data page below.
Sapphire Dry Etching Process (ICP-RIE)
Research Center for Ubiquitous MEMS and Micro Engineering (UMEMSME), National Institute of
Advanced Industrial Science and Technology (AIST), 1-2-1 Namiki, Tsukuba, Ibaraki 305-8564, Japan
Micromachines 2015, 6, 252-265
Samco open-load RIE Plasma Etching System was used for SiO2 dry etching in the device fabrication. The SiO2 layer was successfully removed without breaking the SU-8 membrane.
For our process capabilities of SiO2 dry etching, please visit the page below.
SiO2 Dry Etching Process (RIE or ICP-RIE)