Area-Specific Cell Stimulation via Surface-Mediated Gene Transfer Using Apatite-Based Composite Layers

Yushin Yazaki ^1,2, Ayako Oyane ², Yu Sogo³, Atsuo Ito³, Atsushi Yamazaki¹ and Hideo Tsurushima ^2,4
1 Department of Resources and Environmental Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555, Japan
² Nanomaterials Research Institute, National Institute of Advanced Industrial Science and Technology, Central 4, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562, Japan
³ Health Research Institute, National Institute of Advanced Industrial Science and Technology, Central 6, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8566, Japan
⁴ Department of Neurosurgery, Faculty of Medicine, University of Tsukuba, 1-1-1 Tennoudai, Tsukuba, Ibaraki 305-8575, Japan
Int. J. Mol. Sci. 2015, 16(4), 8294-8309

Samco bench-top RIE etcher was used for plasma treatment of polystyrene substrates before coating with amorphous calcium phosphate (ACP).

Swift heavy ion irradiation induced microstructural modification and evolution of photoluminescence from Si rich a-SiN_x:H

R K Bommali¹, S Ghosh¹, G Vijaya Prakash¹, D Kanjilal², P Mondal³, A K Srivastava³ and P Srivastava¹
1 Nanostech and Nanophotonics Laboratories, Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110 016, India
2 Materials Science Division, Inter-University Accelerator Centre (IUAC), Aruna Asaf Ali Marg, New Delhi 110067, India
3 Indus Synchrotron Utilisation Division, Raja Ramanna Centre for Advanced Technology, Indore 452 013, India
Mater. Res. Express (2015) 2 046204

SAMCO PECVD system was used for silicon film deposition.

Normally-off AlGaN/GaN high-electron-mobility transistor using digital etching technique

Ryota Yamanaka¹, Toru Kanazawa¹, Eiji Yagyu² and Yasuyuki Miyamoto¹
1 Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
2 Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan
Japanese Journal of Applied Physics (2015) 54, 06FG04

SAMCO Reactive Ion Etching System, RIE-10NR was used for fabrication of recessed gate structure of normally-off AlGaN/GaN high-electron-mobility transistor (HEMT).
Undercut issue in recess etching was resolved with the RIE process.

For our process solutions of GaN based power device fabrication, please visit the page below.
AlGaN/GaN Etch for GaN Power Device Fabrication

Apatite-forming PEEK with TiO2 surface layer coating

Takashi Kizuki, Tomiharu Matsushita and Tadashi Kokubo
Department of Biomedical Sciences, College of Life and Health Sciences, Chubu University, 1200 Matsumoto-cho, Kasugai, Aichi 487-8501, Japan
J Mater Sci: Mater Med (2015) 26:41
DOI 10.1007/s10856-014-5359-1

A method for Polyetheretherketone (PEEK) surface treatment was investigated to achieve better adhesion with TiO₂ film coating for biomedical applications. Oxygen plasma treatment of PEEK using Samco system improved adhesion between the material surface and TiO₂ due to increase of oxygen-containing chemical functional groups on the surface.

For more information on Samco plasma cleaners, please visit the product pages below.
Plasma Cleaners
Remote Plasma Cleaners

Liquid Crystal Foams Generated by Pressure-Driven Microfluidic Devices

Shuojia Shi and Hiroshi Yokoyama
Liquid Crystal Institute, Kent State University, Kent, Ohio 44242, United States
Langmuir, 2015, 31 (15), pp 4429–4434

SAMCO Bench-top Plasma Etching System (RIE etcher) was used for surface activation and bonding of PDMS and glass in microfluidic device fabrication.

For more information on plasma cleaners which are suitable for PDMS plasma treatment to improve surface wettability, please visit the product pages below.
Plasma Cleaners
Remote Plasma Cleaners

N₂-Plasma-Assisted One-Step Alignment and Patterning of Graphene Oxide on a SiO₂/Si Substrate Via the Langmuir–Blodgett Technique

Neha Chauhan, Vivekanandan Palaninathan, Sreejith Raveendran, Aby Cheruvathoor Poulose, Yoshikata Nakajima, Takashi Hasumura, Takashi Uchida, Tatsuro Hanajiri, Toru Maekawa and D. Sakthi Kumar
Bio-Nano Electronics Research Centre, Graduate School of Interdisciplinary New Science, Toyo University, Kawagoe, Saitama, Japan
Advanced Materials Interfaces 2015 2 (5)

Samco basic plasma research kit was used for surface modification of SiO₂/Si in nitrogen plasma for selective placement and patterning of monolayer Graphene Oxide.

Methanol Adsorption on TiO₂ Film Studied by Sum Frequency Generation Vibrational Spectroscopy

Ran-ran Feng^a,b, An-an Liu^a,b, Shuo Liu^a,b, Jiao-jian Shi^a,b, Yi Liu^a,b and Ze-feng Ren^a,b
a International Center for Quantum Materials (ICQM) and School of Physics, Peking University, Beijing 100871, China
^b Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
Chin. J. Chem. Phys. 28, 11 (2015)

Samco UV-Ozone cleaner was used for surface cleaning of TiO₂ thin film in sample preparation.
Peking University is a proud customer of Samco UV-Ozone system, UV-1.

Athermal and High-Q Hybrid TiO₂–Si₃N₄ Ring Resonator via an Etching-Free Fabrication Technique

Feng Qiu, Andrew M. Spring, and Shiyoshi Yokoyama*
Institute for Materials Chemistry and Engineering, Kyushu University, 6-1 Kasuga-koen Kasuga-city, Fukuoka, 816-8580, Japan
ACS Photonics (2015) 2, 3 pp 405–409

Samco PECVD system was used for Si3N4 deposition to fabricate a ring resonator.

For more details of our SiN_x PECVD process capabilities, please visit the page below.
SiN_x PECVD Process

Patterning of light-extraction nanostructures on sapphire substrates using nanoimprint and ICP etching with different masking materials

Hao Chen, Qi Zhang and Stephen Y Chou
Nanostructure Laboratory, Department of Electrical Engineering, Princeton University, Princeton, NJ
08544, USA
Nanotechnology (2015) 26 085302 (8pp)

Samco ICP etching system, RIE-200iP was used for recipe optimization of sapphire nanopatterning to improve light extraction of LEDs.

For our process capabilities on Sapphire plasma etching, please visit the process data page below.
Sapphire Dry Etching Process (ICP-RIE)

Performance of SU-8 Membrane Suitable for Deep X-Ray Grayscale Lithography

Harutaka Mekaru
Research Center for Ubiquitous MEMS and Micro Engineering (UMEMSME), National Institute of
Advanced Industrial Science and Technology (AIST), 1-2-1 Namiki, Tsukuba, Ibaraki 305-8564, Japan
Micromachines 2015, 6, 252-265

Samco open-load Plasma Etching System (RIE etcher) was used for SiO₂ dry etching in the device fabrication. The SiO₂ layer was successfully removed without breaking the SU-8 membrane.

For our process capabilities of SiO₂ dry etching, please visit the page below.
SiO₂ Dry Etching Process (RIE or ICP-RIE)