Category: 2016 Customer
Scientific Paper on AlGaN Plasma Etching by Virginia Commonwealth University
Surface photovoltage studies of p-type AlGaN layers after reactive-ion etching
J. D. McNamara 1, K. L. Phumisithikul 1, A. A. Baski1, J. Marini 2, F. Shahedipour-Sandvik 2, S. Das 3 and M. A. Reshchikov 1
1 Physics Department, Virginia Commonwealth University, Richmond, Virginia 23284, USA
2 Colleges of Nanoscale Science and Engineering, SUNY Polytechnic Institute, Albany, New York 12203, USA
3 Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, Virginia 23284, USA
J. Appl. Phys. 120, 155304 (2016)
Nanometer-scale plasma etching of Mg-doped, p-type AlxGa1−xN was performed to remove defective surface region, using Samco ICP-RIE etch system at Virginia Commonwealth University. With plasma etching process with chlorine chemistry, surface defects were successfully removed.
Virginia Commonwealth University is one of Samco’s proprietary customers using our systems for AlGaN & GaN plasma etching in AlGaN/GaN device research.
For more details of our plasma etching technologies of GaN, please visit the process data page below.
GaN Plasma Etching Process Data
Also, for more details of our ICP-RIE etch systems, please visit the product page below.
ICP-RIE Etch Systems
Scientific Paper on ITO Gas Sensor Fabrication from Bilkent University, Turkey
Planar Indium Tin Oxide Heater for Improved Thermal Distribution for Metal Oxide Micromachined Gas Sensors
M. Cihan Çakır1,2 ,Deniz Çalışkan1, Bayram Bütün1 and Ekmel Özbay1,3
1 Nanotechnology Research Center, Bilkent University, Ankara 06800, Turkey
2 Department of Nanotechnology and Nanomedicine, Hacettepe University, Ankara 06800, Turkey
3 Department of Electrical and Electronics Engineering, Department of Physics, Bilkent University, Ankara 06800, Turkey
Samco PECVD system at Bilkent University was used for Si3N4 film deposition to form an etch stop layer in Si wet etching. Furthermore, Samco ICP-RIE plasma etcher at Bilkent University was used for plasma etching of Si3N4 against Si etch mask for ITO gas sensor fabrication.
For more information on our Si3N4 PECVD process capabilities, please visit the process data page below.
Si3N4 PECVD Process Data
For more details of Samco PECVD systems and ICP-RIE systems, please visit product pages below.
Anode PECVD Systems for SiO2, Si3N4, a-Si, SiON, SiCN & DLC Deposition
Cathode PECVD Systems for High-speed SiO2 and Si3N4 Film Deposition
ICP-RIE Plasma Etcher for Si, SiO2, III-V & Metal Etching
Scientific Paper on Silicon Nanowire Fabrication Using the Bosch Process by Kyoto University
Tensile fracture of integrated single-crystal silicon nanowire using MEMS electrostatic testing device
Toshiyuki Tsuchiya , Tetsuya Hemmi, Jun-ya Suzuki, Yoshikazu Hirai, Osamu Tabata
Department of Micro Engineerng, Kyoto University, Kyotodaigaku-Katsura C3, Nishikyo-ku, Kyoto 615-8540, Japan
Procedia Structural Integrity (2016) 2 Pages 1405–1412
Samco silicon Deep RIE system at Kyoto University was used for silicon nanowire fabrication by combination of two types of silicon etch processes (the Bosch Process) with coarse and fine scallops. Using the unique silicon plasma etching processes, silicon nanowire structures were successfully fabricated on a SOI wafer.
Kyoto University is one of Samco Deep RIE system customers for MEMS device research.
For more details of our silicon Deep RIE process technologies, please visit the process data pages below.
Silicon Deep RIE for MEMS & TSV Applications
Deep Silicon Etching Using the Bosch Process – Trench, Via Hole & Pillar Etching
Also, For more information of our silicon Deep RIE systems, please visit the product page below.
Silicon Deep RIE Systems
Scientific Paper on Plasmonic Array with Mesoporous Silica Layer Fabrication by Kyoto University
Mesoporous silica layer on plasmonic array: light trapping in a layer with a variable index of refraction
Shunsuke Murai1, 2, Hiroyuki Sakamoto1, Koji Fujita1, and Katsuhisa Tanaka1
1 Department of Material Chemistry, Graduate School of Engineering, Kyoto University, Katsura, Nishikyo-ku, Kyoto, 615-8510, Japan
2 PRESTO, Japan Science and Technology Agency (JST), Kawaguchi, Saitama 332-0012, Japan
Optical Materials Express Vol. 6, Issue 9, pp. 2736-2744 (2016) doi: 10.1364/OME.6.002736
Plasmonic array was fabricated using nanoimprint technology. First, silicon mold consisting of a periodic square array was fabricated using silicon deep etching. Samco silicon DRIE system at Kyoto University was used for the mold fabrication. Then, Samco ICP etch system was used for pattern transfer by aluminum dry etching over photoresist pattern fabricated by the nanoimprint process.
Scientific Paper on Wettability Control in Porous Media Using UV-Ozone Treatment by MIT
Wettability control on multiphase flow in patterned microfluidics
Benzhong Zhaoa, Christopher W. MacMinnb, and Ruben Juanesa
a Department of Civil and Environmental Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139;
b Department of Engineering Science, University of Oxford, Oxford OX1 3PJ, United Kingdom
PNAS (2016) DOI10.1073/pnas.1603387113
Fluid–fluid displacement in porous media of microfluidic flow cell was studied for potential CO2 sequestration application to solve global warming caused by the greenhouse gas.
Samco tabletop UV-ozone cleaner at MIT was used for wettability improvement of photocurable polymer NOA81 to fabricate microfluidic flow cells.
This article was featured in MIT News.
View the news article.
Scientific Paper on InGaN/GaN LED Using InGaN Plasma Etching by National Cheng Kung University, Taiwan
Piezoelectric effect on compensation of the quantum-confined Stark effect in InGaN/GaN multiple quantum wells based green light-emitting diodes
Sheng-Chieh Tsaia, b, Cheng-Hsueh Lub and Chuan-Pu Liua
a Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan
b Research Center, Genesis Photonics Incorporation, Tainan 74144, Taiwan
Nano Energy (2016)
Samco ICP etch system was used for InGaN plasma etching in quantum well structure fabrication.
Samco has plasma etching process knowledge of III-V compound semiconductor materials including GaN, GaAs, InP and more. Please visit our process data page for more details of our process capabilities.
Scientific Paper on Nanopore DNA Sequencing Technique Development
Integrated solid-state nanopore platform for nanopore fabrication via dielectric breakdown, DNAspeed deceleration and noise reduction
Yusuke Goto, Itaru Yanagi, Kazuma Matsui, Takahide Yokoi & Ken-ichi Takeda
Center for Technology Innovation – Healthcare, Research & Development Group, Hitachi Ltd.,1-280 Higashi-Koigakubo, Kokubunji, Tokyo 185-8601, Japan.
Scientific Reports 6, Article number: 31324 (2016) doi:10.1038/srep31324
Samco plasma cleaner was used for surface cleaning and wettability modulation of substrates with Si3N4 membranes in sample preparation.
Scientific Paper on GaAs-based Phase-modulating Lasers
Phase-modulating lasers toward on-chip integration
Yoshitaka Kurosaka, Kazuyoshi Hirose, Takahiro Sugiyama, Yu Takiguchi & Yoshiro Nomoto
Central Research Laboratory, Hamamatsu Photonics K.K., Shizuoka 434-8601, Japan.
Scientific Reports 6, Article number: 30138 (2016)
doi:10.1038/srep30138
Samco Load-lock ICP-RIE System was used for GaAs-based hole array fabrication in dry etching for phase-modulating laser fabrication.
For our process examples and capabilities of GaAs plasma etching, please visit the process data page below.
GaAs Plasma Etching Process (ICP-RIE)
Scientific Paper on Fused Silica Nanofluidic Device Fabrication by National Taiwan University Team
Multiplexed immunosensing and kinetics monitoring in nanofluidic devices with highly enhanced target capture efficiency
Yii-Lih Lin1,2,3, Yen-Jun Huang3,4, Pattamon Teerapanich5,6, Thierry Leïchlé5,6 and Chia-Fu Chou2,3
1 Department of Chemistry, National Taiwan University, Taipei, Taiwan
2 Nano Science and Technology Program, Taiwan International Graduate Program, Academia Sinica and National Taiwan University, Taipei, Taiwan
3 Institute of Physics, Academia Sinica, Taipei, Taiwan
4 Department of Physics, National Taiwan University, Taipei, Taiwan
5 LAAS-CNRS, 7 Avenue du Colonel Roche, F-31077 Toulouse, France
6 Université de Toulouse, F-31077 Toulouse, France
Biomicrofluidics 10, 034114 (2016)
Samco ICP etch system, RIE-10iP was used for nano-slit pattern fabrication by fused quartz plasma etching.
For our process capabilities of SiO2 and quartz plasma etching, please visit the process data page below.
SiO2 Dry Etching Process (RIE or ICP-RIE)
Scientific Paper on Atomically Ordered Silicon Side-surface Structures From Osaka University Team
Methods of creating and observing atomically reconstructed vertical Si{100}, {110}, and {111} side-surfaces
Azusa N. Hattori1,2, Shohei Takemoto3, Ken Hattori3, Hiroshi Daimon1 and Hidekazu Tanaka1
1 Nanoscience and Nanotechnology Center, The Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047, Japan
2 JST-PRESTO, Kawaguchi, Saitama 332-0012, Japan
3 Graduate School of Materials Science, Nara Institute of Science and Technology, Ikoma, Nara 630-0101, Japan
Appl. Phys. Express (2016) 9 085501
Samco silicon Deep Reactive Ion Etch (DRIE) system at Osaka University was used for silicon nano-scale structure fabrication.
For our process examples and capabilities of deep silicon etching using Bosch Process, please visit the pages below.
Deep Silicon Trench/Via Hole Etching using Bosch Process
Si DRIE (Deep Reactive Ion Etching) for MEMS and TSV