Fabrication of silicon and carbon based wide-gap semiconductor thin films for high conversion efficiency

Kohsuke Yoshinaga, Hiroshi Naragino, Akira Nakahara and Kensuke Honda
Graduate school of Science and Engineering, Yamaguchi University, 1677-1, Yoshida,
Yamaguchi-shi, Yamaguchi, 753-8512, Japan
Journal of Physics: Conference Series (2013) 441, conference 1

SAMCO PECVD System was used for deposition of Nitrogen-doped amorphous silicon carbide films (N-doped a-SiC) to investigate the film properties.

Fabrication of high-aspect-ratio double-slot photonic crystal waveguide in InP heterostructure by inductively coupled plasma etching using ultra-low pressure

Kaiyu Cui, Yongzhuo Li, Xue Feng, Yidong Huang and Wei Zhang
Department of Electronic Engineering, Tsinghua National Laboratory for Information Science and Technology, Tsinghua University, Beijing 100084, China
AIP ADVANCES (2013) 3, 022122

InP photonic crystal waveguide was fabricated using SAMCO ICP Etch System.

For more details of our InP dry etching process capabilities, please visit the page below.
InP Dry Etching Process (RIE or ICP-RIE)

Microwave performance of AlGaN/AlN/GaN -based single and coupled channels HFETs

R. A. Ferreyra, X. Li, F. Zhang, C. Zhu, N. Izyumskaya, C. Kayis, V. Avrutin, Ü. Özgür, and H. Morkoç
Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, VA, USA 23284-3072
Proc. SPIE 8625, Gallium Nitride Materials and Devices VIII, 86252B (March 27, 2013)

SAMCO ICP Etch System at Virginia Commonwealth University was used for mesa isolation of AlGaN/AlN/GaN heterostructures.

For our process solutions for GaN power device fabrication, please visit the page below.
AlGaN/GaN Etch for GaN Power Device Fabrication

Also, for more information on our GaN plasma etching process capabilities, please visit the process data page below.
GaN Plasma Etching Process (RIE or ICP Etching)

Multi-channel PMMA microfluidic biosensor with integrated IDUAs for electrochemical detection

Nongnoot Wongkaew^a,b, Peng He^b, Vanessa Kurth^b, Werasak Surareungchai^a, and Antje J. Baeumner^b
aSchool of Bioresources and Technology, King Mongkut’s University of Technology Thonburi, Bangkhuntien, Bangkok 10150,Thailand ^bDepartment of Biological and Environmental Engineering, Cornell University, 202 Riley Robb Hall, Ithaca, NY 14853, USA
Anal Bioanal Chem. 2013 July ; 405(18): 5965–5974. doi:10.1007/s00216-013-7020-0.

Samco UV-Ozone Cleaner at Cornell University was used for oxidation of PMMA to generate carboxylic groups on the surface in microfluidic biosensor fabrication. Samco UV-Ozone cleaners are used for many R&D labs of polymer biosensor fabrication for bonding of polymer materials, such as PDMS, PMMA , COP & COC.

Structural Optimization of Metallic Infrared Filters Based on Extraordinary Optical Transmission

Makoto Ohkado¹, Tsuyoshi Nomura¹, Atushi Miura¹, Hisayoshi Fujikawa¹, Naoki Ikeda², Yoshimasa Sugimoto² and Shinji Nishiwaki^3
1Toyota Central R&D Labs. Inc., 41-1 Yokomichi, Nagakute, Aichi 480-1192, Japan
²National Institute for Material Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
³Kyoto University, Yoshida Honmachi, Sakyo-ku, Kyoto, Kyoto 606-8501, Japan
Transactions of the Materials Research Society of Japan (2013) 38, No. 2 p. 167-170

SiO₂ plasma etching and Al plasma etching were performed using Samco RIE system and ICP etch system, respectively to fabricate hole array structures of the infrared filter.

For more details of our SiO₂ dry etching capabilities, please visit the page below.
SiO₂ Dry Etching Process (RIE or ICP-RIE)

Optimization of graphene dry etching conditions via combined microscopic and spectroscopic analysis

Mariana C. Prado¹, Deep Jariwala², Tobin J. Marks^2,3 and Mark C. Hersam^2,3
1 Departamento de Física, Universidade Federal de Minas Gerais, Av. Antônio Carlos, 6627, 31270-901 Belo Horizonte, Brazil
² Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, USA
³ Department of Chemistry, Northwestern University, Evanston, Illinois 60208, USA
Appl. Phys. Lett. (2013) 102, 193111

Samco RIE System at Northwestern University was used for investigation of reactive ion etching process of graphene.

Samco RIE systems are versatile tools for plasma etching of various materials including Si, SiO₂, SiN_x, metal, polymer and carbon-based materials.
For more information on our RIE system, please visit the product page below.
RIE Etching Systems

Formation of low resistance ohmic contacts in GaN-based high electron mobility transistors with BCl₃ surface plasma treatment

Tatsuya Fujishima¹, Sameer Joglekar¹, Daniel Piedra¹, Hyung-Seok Lee¹, Yuhao Zhang¹, Akira Uedono² and Tomás Palacios^1
1 Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139-4307, USA
² Division of Applied Physics, Faculty of Pure and Applied Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
Appl. Phys. Lett. 103, 083508 (2013)

Surface treatment technique to reduce the resistance and to increase the uniformity of ohmic contacts in AlGaN/GaN high electron mobility transistors was developed using Samco ICP etch system.

For more details of our process solutions for GaN power device fabrication, please visit the page below.
AlGaN/GaN Etch for GaN Power Device Fabrication

A transfer technique of stress sensors for versatile applications

C. Dou, H. Yang, Y. Wu and X. Li
State Key Laboratory of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, China
Nano/Micro Engineered and Molecular Systems (NEMS), 2013 8th IEEE International Conference on, Suzhou, 2013, pp. 931-934.
doi: 10.1109/NEMS.2013.6559876

Samco open-load RIE etch system was used for SiO₂ layer removal in device fabrication.

For more details of our SiO₂ plasma etching capabilities, please visit the page below.
SiO₂ Dry Etching Process (RIE or ICP-RIE)

Chamber conditioning process development for improved inductively coupled plasma reactive ion etching of GaAs/AlGaAs materials

Michael K. Connors, Jason J. Plant, Kevin G. Ray, and George W. Turner
Lincoln Laboratory, Massachusetts Institute of Technology
J. Vac. Sci. Technol. B 31, 021207 (2013)

SAMCO ICP Etching System, RIE-200iP was used for GaAs plasma etching process investigation.

For more details of our GaAs plasma etching capabilities, please visit the page below.
GaAs Dry Etching Process (ICP-RIE)

Monolithic integration of Pb(Zr,Ti)O3 thin film based resonators using a complete dry microfabrication process

Yonggang Jiang¹ , Kensuke Kanda^2,3, Yuki Iga², Takayuki Fujita^2,3, Kohei Higuchi², Kazusuke Maenaka^2,3
1 School of Mechanical Engineering and Automation, Beihang University, Xueyuan Road No. 37, Haidian District, Beijing, 100191, China
² Maenaka Human-Sensing Fusion Project, ERATO, Japan Science and Technology Agency, 2167 Shosha, Himeji, Hyogo, 671-2280, Japan
³ Graduate School of Engineering, University of Hyogo, 2167 Shosha, Himeji, Hyogo, 671-2280, Japan
Microsyst Technol (2013) 19:137–142

SAMCO ICP etch system was used for PZT plasma etching to fabricate thin film MEMS resonators.