Category: SAMCO Customer Publication
Ryan J Morris1, Trung V Phan2, Matthew Black3, Ke-Chih Lin4, Ioannis G Kevrekidis5, Julia A Bos3 and Robert H Austin2
1 School of Physics & Astronomy, University of Edinburgh, Edinburgh EH9 3FD, United Kingdom
2 Department of Physics, Princeton University, Jadwin Hall, Princeton, NJ 08544, United States of America
3 Lewis-Sigler Institute for Integrative Genomics, Princeton, NJ 08544 United States of America
4 Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, United States of America
5 Department of Chemical and Biological Engineering and PACM, Princeton University, Princeton, NJ 08544, United States of America
New Journal of Physics (2017) Volume 19 035002
Samco offers a couple of silicon Deep RIE systems for R&D and production. Please see the product page below.
Silicon Deep RIE Systems
Also, for more details of Samco silicon deep RIE process capabilities, please visit the process solution page below.
Slicon Deep RIE Technology for MEMS and TSV Processing
Effects of epitaxial growth on the optimum condition of intrinsic amorphous silicon oxide buffer layers for silicon heterojunction solar cells
He Zhanga, Kazuyoshi Nakadab, Makoto Konagaia, c
a MEXT/FUTURE-PV Innovation Research, Japan Science and Technology Agency (JST), 2-2-9 Machiike-dai, Koriyama, Fukushima 963-0298, Japan
b Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1-NE-15 Ookayama, Meguro-ku, Tokyo 152-8552, Japan
c Advanced Research Laboratories, Tokyo City University, 8-15-1, Todoroki, Setagaya-ku, Tokyo 158-0082, Japan
Thin Solid Films (2017) 628 pp 214–220
Samco PECVD tool PD-2203L was used for deposition of amorphous silicon oxide buffer layer for silicon solar cell application. Excellent film properties of surface passivation were achieved. For more details of our PECVD lineup and capabilities, please visit the product pages below.
A novel PMMA/NEB bilayer process for sub-20 nm gold nanoslits by a selective electron beam lithography and dry etch
Xiaqi Huanga, Jinhai Shaoa, ChialinTsoua, Sichao Zhanga, Bingrui Lua, Ling Haob, Yan Sunc, and Yifang Chena
a Nanolithogrophy and Application Research Group, State Key Lab of ASIC and System, School of Information Science and Engineering, Fudan University, Shanghai 200433, China
b National Physical Laboratory, Teddington TW11 0LW, UK
c National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China
Microelectronic Engineering (2017) 172, Pages 13-18
Gold nanoslit structures were fabricated using process parameter optimization of electron beam lithography and dry etching. Samco plasma etcher RIE-10NR was used for dry etching of PMMA layer in oxygen plasma treatment.
High Responsivity MgZnO Ultraviolet Thin-Film Phototransistor Developed Using Radio Frequency Sputtering
Jyun-Yi Li, Sheng-Po Chang *, Ming-Hung Hsu and Shoou-Jinn Chang
Department of Electrical Engineering and Advanced Optoelectronic Technology Center, Institute of Microelectronics, National Cheng Kung University, Tainan 701, Taiwan
Materials 2017, 10(2), 126
Ultraviolet phototransistors were fabricated using Mg-doped ZnO film to achieve high mobility, a fast on–off transition, and high responsivity under deep UV illumination. Samco PECVD equipment PD-220NA was used for 200 nm thick SiO2 film deposition as a dielectric layer.
Samco offers high-speed SiO2 and SiNx film deposition technologies for various device applications. Also, we provide low-temperature PECVD (under 80°C) for device fabrication using heat-sensitive materials.
For more details of the plasma deposition process capabilities, please visit the process solution page below.
High-speed SiO2 and SiNx Deposition
Low-temperature SiO2 and SiNx PECVD Process
Scientific Paper on Microfluidic Chip Fabrication Using Silicon Deep RIE from Vietnam National University
Nguyen Ngan Le1,2, Kim Khanh Huynh1, Thi Cam Hue Phan1, Thi My Dung Dang1 and Mau Chien Dang1
1 Laboratory for Nanotechnology, Vietnam National University in Ho Chi Minh City, Community 6, Linh
Trung Ward, Thu Duc District, Ho Chi Minh, Vietnam
2 University of Science, Vietnam National University in Ho Chi Minh City, 227 Nguyen Van Cu Street,
District 5, Ho Chi Minh City, Vietnam
Adv. Nat. Sci.: Nanosci. Nanotechnol. 8 (2017) 015003
A microfluidic chip device was fabricated using deep silicon etching technology of the Bosch Process. Samco Deep RIE Tool RIE-200iPB was used for silicon etching over silver hard mask. With optimization of process recipe in the silicon etching, vertical silicon channel profile was fabricated.
For more details of our deep RIE process capabilities, please visit the pages below.
Silicon DRIE (Deep Reactive Ion Etching) for MEMS and TSV
Deep Silicon Trench/Via Hole/Pillar Etching using the Bosch Process
Low driving voltage Mach-Zehnder interference modulator constructed from an electro-optic polymer on ultra-thin silicon with a broadband operation
HIROMU SATO1, HIROKI MIURA1 FENG QIU2 ANDREW M. SPRING2, TSUBASA KASHINO3, TAKAMASA KIKUCHI3, MASAAKI OZAWA3, HIDEYUKI NAWATA3, KEISUKE ODOI3, SHIYOSHI YOKOYAMA1,2
1 Department of Molecular and Material Sciences, Kyushu University, 6-1 Kasuga-koen Kasuga-city, Fukuoka 816-8580, Japan
2 Institute for Materials Chemistry and Engineering, Kyushu University, 6-1 Kasuga-koen Kasuga-city, Fukuoka 816-8580, Japan
3 Nissan Chemical Industries LTD. 488-6 Suzumi-cho, Funabashi, Chiba 274-0052, Japan
Optics Express Vol. 25, Issue 2, pp. 768-775 (2017)
An electro-optic (EO) polymer waveguide using an ultra-thin silicon hybrid was fabricated. A 50 nm-thick silicon layer was deposited on SiO2 substrates using Samco plasma CVD system, PD-220NL. Then, the silicon layer was patterned as the Mach-Zehnder interferometer using Samco deep silicon plasma etching system, RIE-400iPB.
For more details of our silicon etching process capabilities, please visit the process data page below.
Silicon Plasma Etching Data
Scientific paper on micro-LEDs fabrication using GaN plasma etching from National Chiao Tung University
Superior characteristics of microscale light emitting diodes through tightly lateral oxide-confined scheme
Shen-Che Huang1, Heng Li1 Zhe-Han Zhang1 Hsiang Chen2 Shing-Chung Wang1 and Tien-Chang Lu1
1 Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta-Hsueh Rd., Hsinchu 30010, Taiwan
2 Department of Applied Materials and Optoelectronic Engineering, National Chi Nan University, 1 Ta-Hsueh Rd., Puli 54561, Taiwan
Appl. Phys. Lett. 110, 021108 (2017); doi: 10.1063/1.4973966
Micro-LED devices with oxide-refilled current apertures of different sizes were fabricated on sapphire substrates. Samco ICP-RIE etcher was used for aperture pattern transfer by GaN plasma etching with etching depth control.
Samco has dedicated to academic and industry customers for both research and production of LED devices by providing equipment and process technologies of plasma etching and PECVD. For more details on our process solutions for LED manufacturing, please visit the process solutions page below.
Patterned Sapphire Substrate & GaN Etch for HB LEDs
Also, our process data on sapphire (Al2O3) etching and GaN etching can be found here.
Sapphire Plasma Etching
GaN Plasma Etching
Consequences of plasma oxidation and vacuum annealing on the chemical properties and electron accumulation of In2O3 surfaces
Theresa Berthold1, Julius Rombach2 Thomas Stauden1 Vladimir Polyakov3
Volker Cimalla3 Stefan Krischok1 Oliver Bierwagen2 and Marcel Himmerlich1
1 Institut fur Mikro- und Nanotechnologien MacroNano, Technische Universit€at Ilmenau, PF 100565, 98684 Ilmenau, Germany
2 Paul-Drude-Institut fur Festk€orperelektronik, Hausvogteiplatz 5–7, 10117 Berlin, Germany
3 Fraunhofer-Institut fur Angewandte Festk€orperphysik, Tullastraße 72, 79108 Freiburg, Germany
Journal of Applied Physics 120, 245301 (2016)
Indium Oxide (In2O3) is used for metal contacts of electronic devices. It is known that defects (oxygen vacancies) and impurities (adsorbates) of In2O3 films change electron concentration. In previous papers, surface treatment techniques using plasma technologies were investigated to reduce the defects and impurities of In2O3 films.
In this paper, Samco ICP plasma etching tool at Paul-Drude-Institut was used for plasma surface oxidation of In2O3, and the samples were treated by subsequent vacuum annealing. It was found that oxygen plasma treatment reduced adsorbed carbon impurities and removed surface defect states, attributed to oxygen vacancies.
Takeshi Kondoa, b, c, Keita Yajimaa, Tsuyoshi Katoa, Masahiro Okanod, Chiaki Terashimab, c, Tatsuo Aikawaa, Masanori Hayaseb, d, Makoto Yuasaa, b, c
a Department of Pure and Applied Chemistry, Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510, Japan
b Research Institute for Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510, Japan
c ACT-C/JST, 4-1-8 Honcho, Kawaguchi, Saitama 333-0012, Japan
d Department of Mechanical Engineering, Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510, Japan
Diamond and Related Materials (2016)
A boron-doped diamond (BDD) electrode with a large specific surface area was fabricated. The combination of thermal treatment and whisker formation by diamond plasma etching was employed for nano-texturing of diamond surfaces. Samco open-load Reactive Ion Etcher, RIE-10NR was used for diamond plasma etching process.
For more details of our diamond plasma etching technologies and capabilities, please visit the process data page below.
Diamond Plasma Etching (RIE and ICP Etch)
Fabrication of SiNx Thin Film of Micro Dielectric Barrier Discharge Reactor for Maskless Nanoscale Etching
Qiang Li1, Jie Liu1, Yichuan Dai1, Wushu Xiang1, Man Zhang1, Hai Wang2 and Li Wen1
1 Department of Precision Machinery and Precision Instrumentation, University of Science and Technology of China, Hefei 230027, China
2 School of Mechanical and Automotive Engineering, Anhui Polytechnic University, Wuhu 241000, China
Micro dielectric barrier discharge (MDBD) devices have some potential interesting applications such as surface modification. Silicon Nitride (SiNx) film can be used as a dielectric barrier layer material in MDBD devices. However, there are challenges of crack and wrinkle formation due to mechanical stress of SiNx film in device fabrication. Samco plasma CVD system was used for SiNx film deposition. With optimization of deposition process recipe, compressive stress of SiNx film was mitigated to suppress crack formation.
For more details of our SiNx film deposition capabilities, please visit the process data page below.
SiNx PECVD Process