Fabrication of SiN_x Thin Film of Micro Dielectric Barrier Discharge Reactor for Maskless Nanoscale Etching

Qiang Li¹, Jie Liu¹, Yichuan Dai¹, Wushu Xiang¹, Man Zhang¹, Hai Wang² and Li Wen^1
1 Department of Precision Machinery and Precision Instrumentation, University of Science and Technology of China, Hefei 230027, China
² School of Mechanical and Automotive Engineering, Anhui Polytechnic University, Wuhu 241000, China

Micro dielectric barrier discharge (MDBD) devices have some potential interesting applications such as surface modification. Silicon Nitride (SiN_x) film can be used as a dielectric barrier layer material in MDBD devices. However, there are challenges of crack and wrinkle formation due to mechanical stress of SiN_x film in device fabrication. Samco plasma CVD system was used for SiN_x film deposition. With optimization of deposition process recipe, compressive stress of SiN_x film was mitigated to suppress crack formation.

For more details of our SiN_x film deposition capabilities, please visit the process data page below.
SiN_x PECVD Process

Influence of top electrodes to vibration modes in impulse responses of MEMS piezoelectric diaphragms for ultrasonic microsensors

T. Nishioka, T. Nishiumi, K. Yamashita and M. Noda
Graduate School of Science and Technology, Kyoto Institute of Technology, Matsugasaki, 606-8585, Japan
2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK), Kyoto, 2016, pp. 1-2.
doi: 10.1109/IMFEDK.2016.7521705

Ultrasonic micro sensors with piezoelectric diaphragms were fabricated to investigate the relationship between vibration mode and device structure of electrode and the diaphragms. Samco Deep Reactive Ion Etching system was used for anisotropic silicon plasma etching in the Bosch Process over SiO₂ mask.

For more details of our silicon plasma etching capabilities, please visit the process data pages below.

Silicon Plasma Etching Process Data (RIE and ICP-RIE)
Silicon Deep RIE Process Data Using the Bosch Process

Communication—A (001) β-Ga₂O₃ MOSFET with +2.9 V Threshold Voltage and HfO₂ Gate Dielectric

Marko J. Tadjerz, Nadeemullah A. Mahadik, Virginia D. Wheeler, Evan R. Glaser, Laura Ruppalt, Andrew D. Koehler, Karl D. Hobart, Charles R. Eddy Jr. and Fritz J. Kub
United States Naval Research Laboratory, Washington, DC 20375, USA
ECS J. Solid State Sci. Technol. 2016 volume 5, issue 9, P468-P470

Gallium Oxide (Ga₂O₃) is a wide bandgap material with high breakdown voltage, and it is a promising material for power device applications. Compared to other wide bandgap materials such as Silicon Carbide (SiC) and Gallium Nitride (GaN), the device research using this material is still primitive. However, β-Ga₂O₃ substrates are commercially available, and more and more researchers are getting interested in its unique material properties.

Here, β-Ga₂O₃ MOSFET was fabricated using commercially available β-Ga₂O₃ substrates. Samco UV-Ozone Cleaner at United States Naval Research Laboratory was used for surface cleaning of SiO₂/Si substrate in sample preparation.

Anti-reflective surfaces: Cascading nano/microstructuring

Yoshiaki Nishijima¹ Ryosuke Komatsu¹ Shunsuke Ota¹, Gediminas Seniutinas² Armandas Balčytis^2,3 and Saulius Juodkazis^2
1 Department of Electrical and Computer Engineering, Graduate School of Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya-Ku, Yokohama 240-8501, Japan
² Centre for Micro-Photonics, Faculty of Engineering and Industrial Sciences, Swinburne University of Technology, Hawthorn, VIC 3122, Australia
³ Institute of Physics, Center for Physical Sciences and Technology, 231 Savanoriu¸ Avenue, LT-02300 Vilnius, Lithuania
APL PHOTONICS 1, 076104 (2016)

Anti-reflective surfaces were created employing plasma etching technologies. Samco ICP-RIE etcher was used for black silicon plasma etching (b-Si) to fabricate nanospike structures using fluorine chemistry.

For more process capabilities of our silicon plasma etching including the Bosch Process Etching, please visit the process data pages below.

Silicon Plasma Etching (RIE etch or ICP-RIE)
Deep Silicon Trench/Via Hole Etching using the Bosch Process

An electro-optic polymer-cladded TiO₂ waveguide modulator

Feng Qiu¹ Hiroki Miura², Andrew M. Spring¹, Jianxun Hong¹, Daisuke Maeda³, Masa-aki Ozawa³, Keisuke Odoi³ and Shiyoshi Yokoyama^1,2
1 Institute for Materials Chemistry and Engineering, Kyushu University, 6-1 Kasuga-koen Kasuga-city, Fukuoka 816-8580, Japan
² Department of Molecular and Material Sciences, Kyushu University, 6-1 Kasuga-koen Kasuga-city, Fukuoka 816-8580, Japan
³ Nissan Chemical Industries, Ltd., 2-10-1 Tuboi Nishi, Funabashi, Chiba 274-8507, Japan
Appl. Phys. Lett. (2016) 109, 173301

Waveguide modulator device using organic electro-optic (EO) materials was studied in this research. Samco ICP plasma etcher was used for slot structure formation for TiO₂ plasma etching in fluorine chemistry during device fabrication.

Identifying DNA methylation in a nanochannel

Xiaoyin Sun^a,b, Takao Yasui^a,b,c, Takeshi Yanagida^d,e, Noritada Kaji^a,b, Sakon Rahong^a,b, Masaki Kanai^d, Kazuki Nagashima^d, Tomoji Kawai^e and Yoshinobu Baba^a,b,f
a Department of Applied Chemistry, Graduate School of Engineering, Nagoya University, Nagoya, Japan;
^b ImPAC T Research Center for Advanced Nanobiodevices, Nagoya University, Nagoya, Japan;
^c Japan Science and Technology Agency (JST), PRESTO, Saitama, Japan;
^d Institute of Materials Chemistry and Engineering, Kyushu University, Fukuoka, Japan;
^e Institute of Scientific and Industrial Research, Osaka University, Osaka, Japan;
^f Health Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Takamatsu, Japan
Science and Technology of Advanced Materials (2016) VOL . 17, NO . 1, 644–649

A new method to analyze DNA methylation was proposed using a nano-channel device in this research. Samco RIE etch tool was used for  quartz plasma etching over Cr hard mask to fabricate nano-channel structures. The nano-channel device is effective to detect single DNA molecule.

For more details of our SiO₂ (quartz) plasma etching capabilities, please visit the process data page below.
SiO₂ Plasma Etching Process (RIE and ICP Etch)

A Mechanically Durable and Flexible Organic Rectifying Diode with a Polyethylenimine Ethoxylated Cathode

Naoji Matsuhisa, Hiroaki Sakamoto, Tomoyuki Yokota, Peter Zalar, Amir Reuveny, Sunghoon Lee and Takao Someya
Electrical and Electronic Engineering and Information Systems, University of Tokyo
7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
Advanced Electronic Materials Volume 2, Issue 10, October 2016

Flexible organic diode device fabrication is performed using Samco process equipment. Samco plasma cleaner PC-300 was used for wettability improvement of polyethylenimine ethoxylated (PEIE) surfaces and for work function improvement of gold (Au) electrode.

Someya lab, University of Tokyo is one of Samco plasma cleaner customers. Our plasma cleaner is used for organic transistor fabrication, and they have published several papers on cutting-edge flexible MEMS devices.

Go to Someya lab website.

Samco plasma cleaners are versatile tools for plasma treatment and cleaning of various materials. For metal surface cleaning, gold plasma treatment is one of the common surface cleaning technique before device packaging. Not only gold but also various metal materials can be processed including aluminum, silver & titanium. We have a special process technique to reduce corrosion risk of metal surfaces caused by plasma cleaning process. Furthermore, multiple shelves inside process chamber enable batch processing of several samples in one time. For more spec details of the plasma cleaners, please visit the product page below.

Plasma Cleaner

Design and fabrication of high-performance diamond triple-gate field-effect transistors

Jiangwei Liu ¹, Hirotaka Ohsato ², Xi Wang ¹, Meiyong Liao ³ & Yasuo Koide ^4
1 International Center for Young Scientists, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan.
² Nanofabrication Platform, NIMS, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan.
³ Optical and Electronic Materials Unit, NIMS, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan.
⁴ Research Network and Facility Services Division, NIMS, 1-2-1 Sengen, Tsukuba, Ibaraki, 305-0047, Japan.
Scientific Reports 6, Article number: 34757 (2016)

Diamond is considered to be a material for next-generation power semiconductor devices due to high thermal conductivity and breakdown voltage. In this research, triple-gate metal-oxide-semiconductor field-effect transistor (MOSFET) device was fabricated using a hydrogenated diamond (H-diamond) substrate. In device fabrication, Samco open-load Reactive Ion Etching (RIE) system at National Institute for Materials Science (NIMS) was used for diamond plasma etching to form a diamond mesa structure.

For our process capabilities of diamond plasma etching, please visit the process data page below.
Diamond Plasma Etching Process Data (RIE Etching & ICP Etching)
Also, for more information on process equipment which are suitable for diamond plasma etching, please visit the product page below,
Reactive Ion Etching (RIE) Systems
ICP Etching Systems

Surface photovoltage studies of p-type AlGaN layers after reactive-ion etching

J. D. McNamara ¹, K. L. Phumisithikul ¹, A. A. Baski1, J. Marini ², F. Shahedipour-Sandvik ², S. Das ³ and M. A. Reshchikov ^1
1 Physics Department, Virginia Commonwealth University, Richmond, Virginia 23284, USA
² Colleges of Nanoscale Science and Engineering, SUNY Polytechnic Institute, Albany, New York 12203, USA
³ Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, Virginia 23284, USA
J. Appl. Phys. 120, 155304 (2016)

Nanometer-scale plasma etching of Mg-doped, p-type Al_xGa_1−xN was performed to remove defective surface region, using Samco ICP-RIE etch system at Virginia Commonwealth University. With plasma etching process with chlorine chemistry, surface defects were successfully removed.

Virginia Commonwealth University is one of Samco’s proprietary customers using our systems for AlGaN & GaN plasma etching in AlGaN/GaN device research.
For more details of our plasma etching technologies of GaN, please visit the process data page below.
GaN Plasma Etching Process Data
Also, for more details of our ICP-RIE etch systems, please visit the product page below.
ICP-RIE Etch Systems

Planar Indium Tin Oxide Heater for Improved Thermal Distribution for Metal Oxide Micromachined Gas Sensors

M. Cihan Çakır^1,2 ,Deniz Çalışkan¹, Bayram Bütün¹ and Ekmel Özbay^1,3
1 Nanotechnology Research Center, Bilkent University, Ankara 06800, Turkey
² Department of Nanotechnology and Nanomedicine, Hacettepe University, Ankara 06800, Turkey
³ Department of Electrical and Electronics Engineering, Department of Physics, Bilkent University, Ankara 06800, Turkey

Samco PECVD system at Bilkent University was used for Si₃N₄ film deposition to form an etch stop layer in Si wet etching. Furthermore, Samco ICP-RIE plasma etcher at Bilkent University was used for plasma etching of Si₃N₄ against Si etch mask for ITO gas sensor fabrication.

For more information on our Si₃N₄ PECVD process capabilities, please visit the process data page below.
Si₃N₄ PECVD Process Data

For more details of Samco PECVD systems and ICP-RIE systems, please visit product pages below.
Anode PECVD Systems for SiO₂, Si₃N₄, a-Si, SiON, SiCN & DLC Deposition
Cathode PECVD Systems for High-speed SiO₂ and Si₃N₄ Film Deposition
ICP-RIE Plasma Etcher for Si, SiO₂, III-V & Metal Etching