Category: Silicon/Dielectrics Etch
Yuanhui Fang, Jian Zhang, Yu-Long Jiang
School of Microelectronics, Fudan University, Shanghai 200433, China
2018 18th International Workshop on Junction Technology (IWJT), Shanghai, 2018, pp. 1-3.
Samco RIE Plasma Etching Equipment was used for tungsten etching and SiO2 etching with the tungsten hardmask.
Celluloid Microenclosure and Microlens Array Fabricated by Suzukiʼs Universal Microprinting Method and XeF2 Vapor Etching for Microbial Analysis
Akihiro Matsutani1 and Ayako Takada2
1 Semiconductor and MEMS Processing Division, Technical Department, Tokyo Institute of Technology,
4259 Nagatsuta, Yokohama, Kanagawa 226-8503, Japan
2 Biomaterials Analysis Division, Technical Department, Tokyo Institute of Technology,
4259 Nagatsuta, Yokohama, Kanagawa 226-8501, Japan
Sensors and Materials, Vol. 30, No. 1 (2018) 149–155
A celluloid-based biochip for cell trapping is fabricated using Suzuki’s universal microprinting (SUMP) method. Samco tabletop Reactive Ion Etching (RIE) system was used for mold fabrication. Si layer was etched over photoresist and Cr mask in fluorine chemistry.
For more information on our RIE system lineup, please visit the product page below.
Yoshihiro Kawata, Kazuki Aoki, Yuhi Inada*, Takeshi Yamao, and Shu Hotta
Faculty of Materials Science and Engineering, Kyoto Institute of Technology, Kyoto 606-8585, Japan
Japanese Journal of Applied Physics 57, 03EH11 (2018)
In this paper, direct fabrication of gratings was performed on HMDS-treated SiO2/Si substrates. Samco plasma etching system at Kyoto Institute of Technology was used for plasma etching of SiO2/Si substrates for grating fabrication over an organic semiconducting oligomer 5,5AA-bis(4-biphenylyl)-2,2A:5A,2AA-terthiophene (BP3T). The system was also used for estimate of BP3T etch resistivity.
Nanofabrication of 10-nm T-shaped gates using a double patterning process with electron beam lithography and dry etch
Jinhai Shao1, Jianan Deng1, W. Lu2 and Yifang Chen1
1Fudan University (China), 2Ohio State University (United States)
J. of Micro/Nanolithography, MEMS, and MOEMS, 16(3), 033508 (2017).
T-shaped gates with the footprint scaling down to 10 nm were fabricated using a double patterning procedure (electron beam lithography and dry etching). Samco Reactive Ion Etching Tool RIE-10NR was used for pattern transfer of metal nanoslit on SiNx layer in fluorine-based chemistry.
Sensitivity of Piezoelectric Ultrasonic Microsensors with Sol-Gel Derived PZT Films Prepared through Various Pyrolysis Temperatures
Kaoru Yamashita, Shota Nakajima, Jo Shiomi and Minoru Noda
Graduate School of Science and Technology, Kyoto Institute of Technology, Kyoto 606-8585, Japan
2017 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK), Kyoto, Japan, 2017, pp. 108-109.
In this paper, MEMS ultrasonic microsensors with sol-gel derived PZT piezoelectric diaphragm was fabricated. In device fabrication, Samco silicon Deep RIE etcher RIE-400iPB was used to form the thin diaphragm structure by silicon plasma etching from the wafer backside.
Stress control of PZT thin film was carried out to investigate high ultrasonic sensitivity of the devices.
Samco provides silicon deep RIE etching technologies utilizing the Bosch Process to R&D labs for MEMS device and TSV processing applications. For more information on our process technologies of deep silicon etching, please visit the process data page below.
Silicon Deep RIE Process Data
Low-power, low-pressure reactive-ion etching process for silicon etching with vertical and smooth walls for mechanobiology application
Mohammed Ashraf, Sree V. Sundararajan, Gianluca Grenci
National University of Singapore, Mechanobiology Institute, Singapore
J. Micro/Nanolith. MEMS MOEMS. 16(3), 034501 (Jul 10, 2017).
Silicon plasma etching was carried out using RIE etcher RIE-10NR. Low-power etching process was newly developed in fluorine chemistry to fabricate vertical smooth sidewalls.
National University of Singapore is one of Samco’s proud customers. As seen in this paper, Samco RIE etcher RIE-10NR shows process versatility with excellent profile control for university lab users. The system can offer a wide range of process window for etching of various materials (silicon, SiO2, SiNx, metals and polymer).
For more details of our process capabilities of silicon etching, please visit the process data page below.
Silicon Plasma Etching
Min Wang1,2, Yulian Zhang1, Linfeng Lu1, Dongdong Li1 and Xufei Zhu3
1 Shanghai Advanced Research Institute, Chinese Academy of Sciences, 99 Haike Road, Zhangjiang Hi-Tech Park, Pudong, Shanghai 201210, People’s Republic of China
2 University of Chinese Academy of Sciences, Beijing 100039, People’s Republic of China
3 School of Chemical Engineering, Nanjing University of Science and Technology, Nanjing 210094, People’s Republic of China
Mater. Res. Express (2017) 4 055005
Crystalline silicon nano-hole array was fabricated using UV nanoimprint (UV-NIL) technology for potential silicon solar cell applications. Samco RIE ether, RIE-10NR was used in device fabrication for photoresist ashing and silicon plasma etching processes. Nano-hole array structures were successfully fabricated.
For more details of Samco RIE etcher lineup, please visit the product page below.
RIE Plasma Etcher
We provide several systems to meet each customer’s process requirements in plasma etching processes.
Ryan J Morris1, Trung V Phan2, Matthew Black3, Ke-Chih Lin4, Ioannis G Kevrekidis5, Julia A Bos3 and Robert H Austin2
1 School of Physics & Astronomy, University of Edinburgh, Edinburgh EH9 3FD, United Kingdom
2 Department of Physics, Princeton University, Jadwin Hall, Princeton, NJ 08544, United States of America
3 Lewis-Sigler Institute for Integrative Genomics, Princeton, NJ 08544 United States of America
4 Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, United States of America
5 Department of Chemical and Biological Engineering and PACM, Princeton University, Princeton, NJ 08544, United States of America
New Journal of Physics (2017) Volume 19 035002
Samco offers a couple of silicon Deep RIE systems for R&D and production. Please see the product page below.
Silicon Deep RIE Systems
Also, for more details of Samco silicon deep RIE process capabilities, please visit the process solution page below.
Slicon Deep RIE Technology for MEMS and TSV Processing
Scientific Paper on Microfluidic Chip Fabrication Using Silicon Deep RIE from Vietnam National University
Nguyen Ngan Le1,2, Kim Khanh Huynh1, Thi Cam Hue Phan1, Thi My Dung Dang1 and Mau Chien Dang1
1 Laboratory for Nanotechnology, Vietnam National University in Ho Chi Minh City, Community 6, Linh
Trung Ward, Thu Duc District, Ho Chi Minh, Vietnam
2 University of Science, Vietnam National University in Ho Chi Minh City, 227 Nguyen Van Cu Street,
District 5, Ho Chi Minh City, Vietnam
Adv. Nat. Sci.: Nanosci. Nanotechnol. 8 (2017) 015003
A microfluidic chip device was fabricated using deep silicon etching technology of the Bosch Process. Samco Deep RIE Tool RIE-200iPB was used for silicon etching over silver hard mask. With optimization of process recipe in the silicon etching, vertical silicon channel profile was fabricated.
For more details of our deep RIE process capabilities, please visit the pages below.
Silicon DRIE (Deep Reactive Ion Etching) for MEMS and TSV
Deep Silicon Trench/Via Hole/Pillar Etching using the Bosch Process
Low driving voltage Mach-Zehnder interference modulator constructed from an electro-optic polymer on ultra-thin silicon with a broadband operation
HIROMU SATO1, HIROKI MIURA1 FENG QIU2 ANDREW M. SPRING2, TSUBASA KASHINO3, TAKAMASA KIKUCHI3, MASAAKI OZAWA3, HIDEYUKI NAWATA3, KEISUKE ODOI3, SHIYOSHI YOKOYAMA1,2
1 Department of Molecular and Material Sciences, Kyushu University, 6-1 Kasuga-koen Kasuga-city, Fukuoka 816-8580, Japan
2 Institute for Materials Chemistry and Engineering, Kyushu University, 6-1 Kasuga-koen Kasuga-city, Fukuoka 816-8580, Japan
3 Nissan Chemical Industries LTD. 488-6 Suzumi-cho, Funabashi, Chiba 274-0052, Japan
Optics Express Vol. 25, Issue 2, pp. 768-775 (2017)
An electro-optic (EO) polymer waveguide using an ultra-thin silicon hybrid was fabricated. A 50 nm-thick silicon layer was deposited on SiO2 substrates using Samco plasma CVD system, PD-220NL. Then, the silicon layer was patterned as the Mach-Zehnder interferometer using Samco deep silicon plasma etching system, RIE-400iPB.
For more details of our silicon etching process capabilities, please visit the process data page below.
Silicon Plasma Etching Data