Thin crystalline silicon with double-sided nano-hole array fabricated by soft UV-NIL and RIE

Min Wang^1,2, Yulian Zhang¹, Linfeng Lu¹, Dongdong Li¹ and Xufei Zhu^3
1 Shanghai Advanced Research Institute, Chinese Academy of Sciences, 99 Haike Road, Zhangjiang Hi-Tech Park, Pudong, Shanghai 201210, People’s Republic of China
² University of Chinese Academy of Sciences, Beijing 100039, People’s Republic of China
³ School of Chemical Engineering, Nanjing University of Science and Technology, Nanjing 210094, People’s Republic of China
Mater. Res. Express (2017) 4 055005

Crystalline silicon nano-hole array was fabricated using UV nanoimprint (UV-NIL) technology for potential silicon solar cell applications. Samco RIE ether, RIE-10NR was used in device fabrication for photoresist ashing and silicon plasma etching processes. Nano-hole array structures were successfully fabricated.

For more details of Samco RIE etcher lineup, please visit the product page below.
RIE Plasma Etcher
We provide several systems to meet each customer’s process requirements in plasma etching processes.

Bacterial population solitary waves can defeat rings of funnels

Ryan J Morris¹, Trung V Phan², Matthew Black³, Ke-Chih Lin⁴, Ioannis G Kevrekidis⁵, Julia A Bos³ and Robert H Austin^2
1 School of Physics & Astronomy, University of Edinburgh, Edinburgh EH9 3FD, United Kingdom
² Department of Physics, Princeton University, Jadwin Hall, Princeton, NJ 08544, United States of America
³ Lewis-Sigler Institute for Integrative Genomics, Princeton, NJ 08544 United States of America
⁴ Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, United States of America
⁵ Department of Chemical and Biological Engineering and PACM, Princeton University, Princeton, NJ 08544, United States of America
New Journal of Physics (2017) Volume 19 035002

Circular corral for bacteria made of rings of concentric funnels was fabricated. Nanoslits were etched on a silicon wafer using Samco Deep RIE Tool RIE-800iPB at Princeton University.

Samco offers a couple of silicon Deep RIE systems for R&D and production. Please see the product page below.
Silicon Deep RIE Systems

Also, for more details of Samco silicon deep RIE process capabilities, please visit the process solution page below.
Slicon Deep RIE Technology for MEMS and TSV Processing

Fabrication of 25 μm-filter microfluidic chip on silicon substrate

Nguyen Ngan Le^1,2, Kim Khanh Huynh¹, Thi Cam Hue Phan¹, Thi My Dung Dang¹ and Mau Chien Dang^1
1 Laboratory for Nanotechnology, Vietnam National University in Ho Chi Minh City, Community 6, Linh
Trung Ward, Thu Duc District, Ho Chi Minh, Vietnam
² University of Science, Vietnam National University in Ho Chi Minh City, 227 Nguyen Van Cu Street,
District 5, Ho Chi Minh City, Vietnam
Adv. Nat. Sci.: Nanosci. Nanotechnol. 8 (2017) 015003

A microfluidic chip device was fabricated using deep silicon etching technology of the Bosch Process. Samco Deep RIE Tool RIE-200iPB was used for silicon etching over silver hard mask. With optimization of process recipe in the silicon etching, vertical silicon channel profile was fabricated.

For more details of our deep RIE process capabilities, please visit the pages below.
Silicon DRIE (Deep Reactive Ion Etching) for MEMS and TSV
Deep Silicon Trench/Via Hole/Pillar Etching using the Bosch Process

Low driving voltage Mach-Zehnder interference modulator constructed from an electro-optic polymer on ultra-thin silicon with a broadband operation

HIROMU SATO¹, HIROKI MIURA¹ FENG QIU² ANDREW M. SPRING², TSUBASA KASHINO³, TAKAMASA KIKUCHI³, MASAAKI OZAWA³, HIDEYUKI NAWATA³, KEISUKE ODOI³, SHIYOSHI YOKOYAMA^1,2
1 Department of Molecular and Material Sciences, Kyushu University, 6-1 Kasuga-koen Kasuga-city, Fukuoka 816-8580, Japan
² Institute for Materials Chemistry and Engineering, Kyushu University, 6-1 Kasuga-koen Kasuga-city, Fukuoka 816-8580, Japan
³ Nissan Chemical Industries LTD. 488-6 Suzumi-cho, Funabashi, Chiba 274-0052, Japan
Optics Express Vol. 25, Issue 2, pp. 768-775 (2017)

An electro-optic (EO) polymer waveguide using an ultra-thin silicon hybrid was fabricated. A 50 nm-thick silicon layer was deposited on SiO₂ substrates using Samco plasma CVD system, PD-220NL. Then, the silicon layer was patterned as the Mach-Zehnder interferometer using Samco deep silicon plasma etching system, RIE-400iPB.

For more details of our silicon etching process capabilities, please visit the process data page below.
Silicon Plasma Etching Data

Influence of top electrodes to vibration modes in impulse responses of MEMS piezoelectric diaphragms for ultrasonic microsensors

T. Nishioka, T. Nishiumi, K. Yamashita and M. Noda
Graduate School of Science and Technology, Kyoto Institute of Technology, Matsugasaki, 606-8585, Japan
2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK), Kyoto, 2016, pp. 1-2.
doi: 10.1109/IMFEDK.2016.7521705

Ultrasonic micro sensors with piezoelectric diaphragms were fabricated to investigate the relationship between vibration mode and device structure of electrode and the diaphragms. Samco Deep Reactive Ion Etching system was used for anisotropic silicon plasma etching in the Bosch Process over SiO₂ mask.

For more details of our silicon plasma etching capabilities, please visit the process data pages below.

Silicon Plasma Etching Process Data (RIE and ICP-RIE)
Silicon Deep RIE Process Data Using the Bosch Process

Anti-reflective surfaces: Cascading nano/microstructuring

Yoshiaki Nishijima¹ Ryosuke Komatsu¹ Shunsuke Ota¹, Gediminas Seniutinas² Armandas Balčytis^2,3 and Saulius Juodkazis^2
1 Department of Electrical and Computer Engineering, Graduate School of Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya-Ku, Yokohama 240-8501, Japan
² Centre for Micro-Photonics, Faculty of Engineering and Industrial Sciences, Swinburne University of Technology, Hawthorn, VIC 3122, Australia
³ Institute of Physics, Center for Physical Sciences and Technology, 231 Savanoriu¸ Avenue, LT-02300 Vilnius, Lithuania
APL PHOTONICS 1, 076104 (2016)

Anti-reflective surfaces were created employing plasma etching technologies. Samco ICP-RIE etcher was used for black silicon plasma etching (b-Si) to fabricate nanospike structures using fluorine chemistry.

For more process capabilities of our silicon plasma etching including the Bosch Process Etching, please visit the process data pages below.

Silicon Plasma Etching (RIE etch or ICP-RIE)
Deep Silicon Trench/Via Hole Etching using the Bosch Process

Identifying DNA methylation in a nanochannel

Xiaoyin Sun^a,b, Takao Yasui^a,b,c, Takeshi Yanagida^d,e, Noritada Kaji^a,b, Sakon Rahong^a,b, Masaki Kanai^d, Kazuki Nagashima^d, Tomoji Kawai^e and Yoshinobu Baba^a,b,f
a Department of Applied Chemistry, Graduate School of Engineering, Nagoya University, Nagoya, Japan;
^b ImPAC T Research Center for Advanced Nanobiodevices, Nagoya University, Nagoya, Japan;
^c Japan Science and Technology Agency (JST), PRESTO, Saitama, Japan;
^d Institute of Materials Chemistry and Engineering, Kyushu University, Fukuoka, Japan;
^e Institute of Scientific and Industrial Research, Osaka University, Osaka, Japan;
^f Health Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Takamatsu, Japan
Science and Technology of Advanced Materials (2016) VOL . 17, NO . 1, 644–649

A new method to analyze DNA methylation was proposed using a nano-channel device in this research. Samco RIE etch tool was used for  quartz plasma etching over Cr hard mask to fabricate nano-channel structures. The nano-channel device is effective to detect single DNA molecule.

For more details of our SiO₂ (quartz) plasma etching capabilities, please visit the process data page below.
SiO₂ Plasma Etching Process (RIE and ICP Etch)

Planar Indium Tin Oxide Heater for Improved Thermal Distribution for Metal Oxide Micromachined Gas Sensors

M. Cihan Çakır^1,2 ,Deniz Çalışkan¹, Bayram Bütün¹ and Ekmel Özbay^1,3
1 Nanotechnology Research Center, Bilkent University, Ankara 06800, Turkey
² Department of Nanotechnology and Nanomedicine, Hacettepe University, Ankara 06800, Turkey
³ Department of Electrical and Electronics Engineering, Department of Physics, Bilkent University, Ankara 06800, Turkey

Samco PECVD system at Bilkent University was used for Si₃N₄ film deposition to form an etch stop layer in Si wet etching. Furthermore, Samco ICP-RIE plasma etcher at Bilkent University was used for plasma etching of Si₃N₄ against Si etch mask for ITO gas sensor fabrication.

For more information on our Si₃N₄ PECVD process capabilities, please visit the process data page below.
Si₃N₄ PECVD Process Data

For more details of Samco PECVD systems and ICP-RIE systems, please visit product pages below.
Anode PECVD Systems for SiO₂, Si₃N₄, a-Si, SiON, SiCN & DLC Deposition
Cathode PECVD Systems for High-speed SiO₂ and Si₃N₄ Film Deposition
ICP-RIE Plasma Etcher for Si, SiO₂, III-V & Metal Etching

Tensile fracture of integrated single-crystal silicon nanowire using MEMS electrostatic testing device

Toshiyuki Tsuchiya , Tetsuya Hemmi, Jun-ya Suzuki, Yoshikazu Hirai, Osamu Tabata
Department of Micro Engineerng, Kyoto University, Kyotodaigaku-Katsura C3, Nishikyo-ku, Kyoto 615-8540, Japan
Procedia Structural Integrity (2016) 2 Pages 1405–1412

Samco silicon Deep RIE system at Kyoto University was used for silicon nanowire fabrication by combination of two types of silicon etch processes (the Bosch Process) with coarse and fine scallops. Using the unique silicon plasma etching processes, silicon nanowire structures were successfully fabricated on a SOI wafer.

Kyoto University is one of Samco Deep RIE system customers for MEMS device research.
For more details of our silicon Deep RIE process technologies, please visit the process data pages below.
Silicon Deep RIE for MEMS & TSV Applications
Deep Silicon Etching Using the Bosch Process – Trench, Via Hole & Pillar Etching

Also, For more information of our silicon Deep RIE systems, please visit the product page below.
Silicon Deep RIE Systems

Mesoporous silica layer on plasmonic array: light trapping in a layer with a variable index of refraction

Shunsuke Murai^{1, 2}, Hiroyuki Sakamoto¹, Koji Fujita¹, and Katsuhisa Tanaka^1
1 Department of Material Chemistry, Graduate School of Engineering, Kyoto University, Katsura, Nishikyo-ku, Kyoto, 615-8510, Japan
² PRESTO, Japan Science and Technology Agency (JST), Kawaguchi, Saitama 332-0012, Japan
Optical Materials Express Vol. 6, Issue 9, pp. 2736-2744 (2016) doi: 10.1364/OME.6.002736

Plasmonic array was fabricated using nanoimprint technology. First, silicon mold consisting of a periodic square array was fabricated using silicon deep etching. Samco silicon DRIE system at Kyoto University was used for the mold fabrication. Then, Samco ICP etch system was used for pattern transfer by aluminum dry etching over photoresist pattern fabricated by the nanoimprint process.