Category: Silicon/Dielectrics Etch
Sensitivity of Piezoelectric Ultrasonic Microsensors with Sol-Gel Derived PZT Films Prepared through Various Pyrolysis Temperatures
Kaoru Yamashita, Shota Nakajima, Jo Shiomi and Minoru Noda
Graduate School of Science and Technology, Kyoto Institute of Technology, Kyoto 606-8585, Japan
2017 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK), Kyoto, Japan, 2017, pp. 108-109.
In this paper, MEMS ultrasonic microsensors with sol-gel derived PZT piezoelectric diaphragm was fabricated. In device fabrication, Samco silicon Deep RIE etcher RIE-400iPB was used to form the thin diaphragm structure by silicon plasma etching from the wafer backside.
Stress control of PZT thin film was carried out to investigate high ultrasonic sensitivity of the devices.
Samco provides silicon deep RIE etching technologies utilizing the Bosch Process to R&D labs for MEMS device and TSV processing applications. For more information on our process technologies of deep silicon etching, please visit the process data page below.
Silicon Deep RIE Process Data
Low-power, low-pressure reactive-ion etching process for silicon etching with vertical and smooth walls for mechanobiology application
Mohammed Ashraf, Sree V. Sundararajan, Gianluca Grenci
National University of Singapore, Mechanobiology Institute, Singapore
J. Micro/Nanolith. MEMS MOEMS. 16(3), 034501 (Jul 10, 2017).
Silicon plasma etching was carried out using RIE etcher RIE-10NR. Low-power etching process was newly developed in fluorine chemistry to fabricate vertical smooth sidewalls.
National University of Singapore is one of Samco’s proud customers. As seen in this paper, Samco RIE etcher RIE-10NR shows process versatility with excellent profile control for university lab users. The system can offer a wide range of process window for etching of various materials (silicon, SiO2, SiNx, metals and polymer).
For more details of our process capabilities of silicon etching, please visit the process data page below.
Silicon Plasma Etching
Min Wang1,2, Yulian Zhang1, Linfeng Lu1, Dongdong Li1 and Xufei Zhu3
1 Shanghai Advanced Research Institute, Chinese Academy of Sciences, 99 Haike Road, Zhangjiang Hi-Tech Park, Pudong, Shanghai 201210, People’s Republic of China
2 University of Chinese Academy of Sciences, Beijing 100039, People’s Republic of China
3 School of Chemical Engineering, Nanjing University of Science and Technology, Nanjing 210094, People’s Republic of China
Mater. Res. Express (2017) 4 055005
Crystalline silicon nano-hole array was fabricated using UV nanoimprint (UV-NIL) technology for potential silicon solar cell applications. Samco RIE ether, RIE-10NR was used in device fabrication for photoresist ashing and silicon plasma etching processes. Nano-hole array structures were successfully fabricated.
For more details of Samco RIE etcher lineup, please visit the product page below.
RIE Plasma Etcher
We provide several systems to meet each customer’s process requirements in plasma etching processes.
Ryan J Morris1, Trung V Phan2, Matthew Black3, Ke-Chih Lin4, Ioannis G Kevrekidis5, Julia A Bos3 and Robert H Austin2
1 School of Physics & Astronomy, University of Edinburgh, Edinburgh EH9 3FD, United Kingdom
2 Department of Physics, Princeton University, Jadwin Hall, Princeton, NJ 08544, United States of America
3 Lewis-Sigler Institute for Integrative Genomics, Princeton, NJ 08544 United States of America
4 Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, United States of America
5 Department of Chemical and Biological Engineering and PACM, Princeton University, Princeton, NJ 08544, United States of America
New Journal of Physics (2017) Volume 19 035002
Samco offers a couple of silicon Deep RIE systems for R&D and production. Please see the product page below.
Silicon Deep RIE Systems
Also, for more details of Samco silicon deep RIE process capabilities, please visit the process solution page below.
Slicon Deep RIE Technology for MEMS and TSV Processing
Scientific Paper on Microfluidic Chip Fabrication Using Silicon Deep RIE from Vietnam National University
Nguyen Ngan Le1,2, Kim Khanh Huynh1, Thi Cam Hue Phan1, Thi My Dung Dang1 and Mau Chien Dang1
1 Laboratory for Nanotechnology, Vietnam National University in Ho Chi Minh City, Community 6, Linh
Trung Ward, Thu Duc District, Ho Chi Minh, Vietnam
2 University of Science, Vietnam National University in Ho Chi Minh City, 227 Nguyen Van Cu Street,
District 5, Ho Chi Minh City, Vietnam
Adv. Nat. Sci.: Nanosci. Nanotechnol. 8 (2017) 015003
A microfluidic chip device was fabricated using deep silicon etching technology of the Bosch Process. Samco Deep RIE Tool RIE-200iPB was used for silicon etching over silver hard mask. With optimization of process recipe in the silicon etching, vertical silicon channel profile was fabricated.
For more details of our deep RIE process capabilities, please visit the pages below.
Silicon DRIE (Deep Reactive Ion Etching) for MEMS and TSV
Deep Silicon Trench/Via Hole/Pillar Etching using the Bosch Process
Low driving voltage Mach-Zehnder interference modulator constructed from an electro-optic polymer on ultra-thin silicon with a broadband operation
HIROMU SATO1, HIROKI MIURA1 FENG QIU2 ANDREW M. SPRING2, TSUBASA KASHINO3, TAKAMASA KIKUCHI3, MASAAKI OZAWA3, HIDEYUKI NAWATA3, KEISUKE ODOI3, SHIYOSHI YOKOYAMA1,2
1 Department of Molecular and Material Sciences, Kyushu University, 6-1 Kasuga-koen Kasuga-city, Fukuoka 816-8580, Japan
2 Institute for Materials Chemistry and Engineering, Kyushu University, 6-1 Kasuga-koen Kasuga-city, Fukuoka 816-8580, Japan
3 Nissan Chemical Industries LTD. 488-6 Suzumi-cho, Funabashi, Chiba 274-0052, Japan
Optics Express Vol. 25, Issue 2, pp. 768-775 (2017)
An electro-optic (EO) polymer waveguide using an ultra-thin silicon hybrid was fabricated. A 50 nm-thick silicon layer was deposited on SiO2 substrates using Samco plasma CVD system, PD-220NL. Then, the silicon layer was patterned as the Mach-Zehnder interferometer using Samco deep silicon plasma etching system, RIE-400iPB.
For more details of our silicon etching process capabilities, please visit the process data page below.
Silicon Plasma Etching Data
Influence of top electrodes to vibration modes in impulse responses of MEMS piezoelectric diaphragms for ultrasonic microsensors
T. Nishioka, T. Nishiumi, K. Yamashita and M. Noda
Graduate School of Science and Technology, Kyoto Institute of Technology, Matsugasaki, 606-8585, Japan
2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK), Kyoto, 2016, pp. 1-2.
Ultrasonic micro sensors with piezoelectric diaphragms were fabricated to investigate the relationship between vibration mode and device structure of electrode and the diaphragms. Samco Deep Reactive Ion Etching system was used for anisotropic silicon plasma etching in the Bosch Process over SiO2 mask.
For more details of our silicon plasma etching capabilities, please visit the process data pages below.
Scientific Paper on Anti-reflective Surface Fabrication by Si Plasma Etch from Yokohoma National University Team
Yoshiaki Nishijima1 Ryosuke Komatsu1 Shunsuke Ota1, Gediminas Seniutinas2 Armandas Balčytis2,3 and Saulius Juodkazis2
1 Department of Electrical and Computer Engineering, Graduate School of Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya-Ku, Yokohama 240-8501, Japan
2 Centre for Micro-Photonics, Faculty of Engineering and Industrial Sciences, Swinburne University of Technology, Hawthorn, VIC 3122, Australia
3 Institute of Physics, Center for Physical Sciences and Technology, 231 Savanoriu¸ Avenue, LT-02300 Vilnius, Lithuania
APL PHOTONICS 1, 076104 (2016)
Anti-reflective surfaces were created employing plasma etching technologies. Samco ICP-RIE etcher was used for black silicon plasma etching (b-Si) to fabricate nanospike structures using fluorine chemistry.
For more process capabilities of our silicon plasma etching including the Bosch Process Etching, please visit the process data pages below.
Scientific Paper on Nano-channel Device Fabrication Using Quartz Plasma Etching from Nagoya University Team
Xiaoyin Suna,b, Takao Yasuia,b,c, Takeshi Yanagidad,e, Noritada Kajia,b, Sakon Rahonga,b, Masaki Kanaid, Kazuki Nagashimad, Tomoji Kawaie and Yoshinobu Babaa,b,f
a Department of Applied Chemistry, Graduate School of Engineering, Nagoya University, Nagoya, Japan;
b ImPAC T Research Center for Advanced Nanobiodevices, Nagoya University, Nagoya, Japan;
c Japan Science and Technology Agency (JST), PRESTO, Saitama, Japan;
d Institute of Materials Chemistry and Engineering, Kyushu University, Fukuoka, Japan;
e Institute of Scientific and Industrial Research, Osaka University, Osaka, Japan;
f Health Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Takamatsu, Japan
Science and Technology of Advanced Materials (2016) VOL . 17, NO . 1, 644–649
A new method to analyze DNA methylation was proposed using a nano-channel device in this research. Samco RIE etch tool was used for quartz plasma etching over Cr hard mask to fabricate nano-channel structures. The nano-channel device is effective to detect single DNA molecule.
For more details of our SiO2 (quartz) plasma etching capabilities, please visit the process data page below.
SiO2 Plasma Etching Process (RIE and ICP Etch)
Planar Indium Tin Oxide Heater for Improved Thermal Distribution for Metal Oxide Micromachined Gas Sensors
M. Cihan Çakır1,2 ,Deniz Çalışkan1, Bayram Bütün1 and Ekmel Özbay1,3
1 Nanotechnology Research Center, Bilkent University, Ankara 06800, Turkey
2 Department of Nanotechnology and Nanomedicine, Hacettepe University, Ankara 06800, Turkey
3 Department of Electrical and Electronics Engineering, Department of Physics, Bilkent University, Ankara 06800, Turkey
Samco PECVD system at Bilkent University was used for Si3N4 film deposition to form an etch stop layer in Si wet etching. Furthermore, Samco ICP-RIE plasma etcher at Bilkent University was used for plasma etching of Si3N4 against Si etch mask for ITO gas sensor fabrication.
For more information on our Si3N4 PECVD process capabilities, please visit the process data page below.
Si3N4 PECVD Process Data
For more details of Samco PECVD systems and ICP-RIE systems, please visit product pages below.
Anode PECVD Systems for SiO2, Si3N4, a-Si, SiON, SiCN & DLC Deposition
Cathode PECVD Systems for High-speed SiO2 and Si3N4 Film Deposition
ICP-RIE Plasma Etcher for Si, SiO2, III-V & Metal Etching