Direct Growth and Controlled Coalescence of Thick AlN Template on Micro-circle Patterned Si Substrate

Binh Tinh Tran, Hideki Hirayama, Noritoshi Maeda, Masafumi Jo, Shiro Toyoda and Norihiko Kamata
Quantum Optodevice Laboratory, Institute of Physical and Chemical Research (RIKEN), 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
Sci Rep. (2015) 5 14734.

SiO2 film was deposited on Si substrate, using Samco PECVD system.
Then, Si was etched over SiO2 film, using Samco ICP etcher for microscale patterning.

For more details of our SiO₂ PECVD & Si plasma etching capabilities, please visit the process data pages below.
SiO₂ PECVD Process Data
Silicon Plasma Etching Process Data (RIE or ICP Etch)

Microfluidic chemical processing with on-chip washing by deterministic lateral displacement arrays with separator walls

Yu Chen^1,2, Joseph D’Silva^1,2, Robert H. Austin^1,3 and James C. Sturm^1,2
1 Princeton Institute for Science and Technology of Materials (PRISM), Princeton, New Jersey 08544, USA
² Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA
³ Department of Physics, Princeton University, Princeton, New Jersey 08544, USA
BIOMICROFLUIDICS 9, 054105 (2015)

Samco Silicon DRIE System at Princeton University was used for microchannel fabrication.

For our process capabilities of deep silicon etching, please visit the pages below.
Si DRIE (Deep Reactive Ion Etching) for MEMS and TSV
Deep Silicon Trench/Via Hole Etching using Bosch Process

Thin-film edge electrode lithography enabling low-cost collective transfer of nanopatterns

Yongfang Li^1,2, Akihiro Goryu¹, Kunhan Chen², Hiroshi Toshiyoshi² and Hiroyuki Fujita^2
1 Corporate Research & Development Center, Toshiba Corporation, Kawasaki, JAPAN
² The University of Tokyo, Tokyo, JAPAN
Presented at 2015 28th IEEE International Conference on Micro Electro Mechanical Systems (MEMS)

Samco open-load RIE system was used for silicon dry etching over oxide to transfer the oxide pattern in new lithography process development.

For our process capabilities of silicon dry etching for device fabrication please visit the process data pages below.
Si Dry Etching Process (RIE, ICP-RIE or XeF₂ Etch)
Deep Silicon Trench/Via Hole Etching using Bosch Process

A sub-micron-gap soi capacitive accelerometer array utilizing size effect

Matsui, Y.,  Hirai, Y., Tsuchiya, T. and Tabata, O.
Dept. of Micro Eng., Kyoto Univ., Kyoto, Japan
Presented at 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS) at Anchorage, AK.

Samco Silicon DRIE System at Kyoto University was used for deep silicon etching in MEMS device fabrication.

Our process examples and capabilities of deep silicon etching can be found in the page below.
Deep Silicon Trench/Via Hole Etching using Bosch Process

Kyoto University is one of the proprietary customers of Samco silicon DRIE System for MEMS device fabrication.

Go to Tabata Lab, Kyoto University

Electrophoretic displays driven by all-oxide thin-film transistor backplanes fabricated using a solution process

Satoshi Inoue, Tue Trong Phan, Tomoko Hori, Hiroaki Koyama and Tatsuya Shimoda
Green Device Research Center, Japan Advanced Institute of Science and Technology, Ishikawa 923-1211, Japan
physica status solidi (a) Volume 212, Issue 10, pages 2133–2140, October 2015

Samco ICP etching system was used for plasma etching of the Ruthenium Oxide (RuO₂), Zr-In-Zn-O (ZIZO), Silicon Dioxide (SiO₂) and Indium Tin Oxide (ITO) films.

Our process capabilites of SiO₂ dry etching can be found in the page below.
SiO₂ Dry Etching Process (RIE or ICP-RIE)

Three-dimensional Nanowire Structures for Ultra-Fast Separation of DNA, Protein and RNA Molecules

Sakon Rahong^1,2, Takao Yasui^2,3, Takeshi Yanagida⁴, Kazuki Nagashima⁴, Masaki Kanai⁴,
Gang Meng⁴, Yong He⁴, Fuwei Zhuge⁴, Noritada Kaji^2,3, Tomoji Kawai⁴ & Yoshinobu Baba^1,2,3,5
1 Institute of Innovation for Future Society, Nagoya University, JAPAN.
² FIRST Research Center for Innovative Nanobiodevices, Nagoya University, JAPAN.
³ Department of Applied Chemistry, Graduate School of Engineering, Nagoya University, JAPAN.
⁴ The Institute of Scientific and Industrial Research, Osaka University, JAPAN.
⁵ Health Research Institute, National Institute of Advanced Industrial Science and. Technology (AIST), JAPAN.
Scientific Reports 5, Article number: 10584 (2015) doi:10.1038/srep10584

SAMCO Reactive Ion Etching System RIE-10NR was used for SiO₂ plasma etching over Cr mask. This process is used for micro-channel fabrication on microfluidic system which enables ultra-fast separation of biomolecules (DNA, Protein and RNA Molecules).

For our process examples and capabilities of SiO₂ plasma etching, please visit the process data page below.
SiO₂ Dry Etching Process (RIE or ICP-RIE)

High precision fabrication of antennas and sensors

A. Balcytis^1,2,3, G. Seniutinas^1,2, D. Urbonas^1,3, M. Gabalis³ K. Vaskevicius³, R. Petruskevicius³, G. Molis⁴, G. Valusis⁵ and S. Juodkazis^1,2
1 Centre for Micro-Photonics and Industrial Research Institute Swinburne, Faculty of Engineering and Industrial Sciences, Swinburne University of Technology, Hawthorn, VIC 3122, Australia
² Melbourne Centre for Nanofabrication, 151 Wellington Road, Clayton, VIC 3168, Australia
³ Institute of Physics, Center for Physical Sciences and Technology, 231 Savanoriu Avenue, LT-02300 Vilnius, Lithuania
⁴ Teravil Ltd, Vilnius, LT 01108, Lithuania
⁵ Semiconductor Physics Institute, Center for Physical Science and Technology, 11 A. Gostauto st., LT01108 Vilnius, Lithuania
Proc. SPIE 9446, Ninth International Symposium on Precision Engineering Measurement and Instrumentation, 94461G (March 6, 2015); doi:10.1117/12.2180814

SOI waveguide was fabricated using Samco ICP etch system for plasma etching of silicon against Cr mask.
For our process examples of silicon plasma etching, please visit the page below.
Si Dry Etching Process (RIE, ICP-RIE or XeF₂ Etch)

Buckling behavior of piezoelectric diaphragms for highly sensitive structures of ultrasonic microsensors controlled through intrinsic stress of PZT films

Yamashita, K.; Arai, K.; Tanaka, H.; Nishiumi, T.; Noda, M.
Graduate School of Science & Technology, Kyoto Institute of Technology, Kyoto, Japan
presented at Applications of Ferroelectric, International Symposium on Integrated Functionalities and Piezoelectric Force Microscopy Workshop (ISAF/ISIF/PFM), 2015 Joint IEEE International Symposium on the , vol., no., pp.44-47, 24-27 May 2015

SAMCO silicon DRIE system at Kyoto Institute of Technology was used for Silicon Dioxide (SiO₂) dry etching.
Our DRIE systems are equipped with SiO₂ etch kit for high-speed SiO₂ plasma etching. For more details, please visit our product page below.
Silicon Deep Reactive Ion Etching (DRIE) Systems

Also, for our process capabilities of SiO₂ plasma etching, please visit the process data page below.
SiO₂ Plasma Etching Process Data (RIE or ICP Etch)

Performance of SU-8 Membrane Suitable for Deep X-Ray Grayscale Lithography

Harutaka Mekaru
Research Center for Ubiquitous MEMS and Micro Engineering (UMEMSME), National Institute of
Advanced Industrial Science and Technology (AIST), 1-2-1 Namiki, Tsukuba, Ibaraki 305-8564, Japan
Micromachines 2015, 6, 252-265

Samco open-load Plasma Etching System (RIE etcher) was used for SiO₂ dry etching in the device fabrication. The SiO₂ layer was successfully removed without breaking the SU-8 membrane.

For our process capabilities of SiO₂ dry etching, please visit the page below.
SiO₂ Dry Etching Process (RIE or ICP-RIE)

Packaging and design of a heterogeneous dual laser chip for a widely tunable spectrally pure optical RF source

David W. Grund Jr., Garrett J. Schneider, Janusz Murakowski, and Dennis W. Prather
Electrical and Computer Engineering, University of Delaware, Newark, Delaware, USA
Optics Express (2014) 22, 17, pp. 19838-19849

Samco ICP Etch System was used for silicon fine etching.
Then, Samco PECVD System was used for SiO₂ layer deposition to isolate a metal heater from the etched silicon layer.

For details of SiO₂ PECVD process capabilities, please visit the page below.
SiO₂ PECVD Process