DNA combing on low-pressure oxygen plasma modified polysilsesquioxane substrates for single-molecule studies

K. K. Sriram^1,2,3 Chun-Ling Chang³ U. Rajesh Kumar^1,4,5 and Chia-Fu Chou^3,6,7
1 Nano Science and Technology Program, Taiwan International Graduate Program, Academia Sinica, Taipei 11529, Taiwan
² Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan
³ Institute of Physics, Academia Sinica, Taipei 11529, Taiwan
⁴ Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan
⁵ Department of Chemistry, National Taiwan University, Taipei 10617, Taiwan
⁶ Genomics Research Center, Academia Sinica, Taipei 11529, Taiwan
⁷ Research Center for Applied Sciences, Academia Sinica, Taipei 11529, Taiwan
Biomicrofluidics (2014) 8, 052102

SAMCO ICP Etch System was used for microchannel fabrication on fused silica glass substrates.

For more details of our glass dry etch technologies (SiO2, fused silica and quartz), please visit the page below.
SiO₂ Dry Etching Process (RIE or ICP-RIE)

Nanofabrication of air-spaced field-plate gates with ultra-short footprint

Jinhai Shao^a, Jianpeng Liu^a, Junjie Li^a, Sichao Zhang^a, Bing-Rui Lu^a, W. Lu^b and Yifang Chen^a
a State Key Lab of ASIC and System, School of Information Science and Engineering, Fudan University, Shanghai 200433, China
^b Department of Electrical and Computer Engineering, Ohio State University, Columbus, OH 43210, USA
Microelectronic Engineering (2014) 143, 1, 11-14

Samco RIE System at Fudan University was used for SiNx plasma etching to fabricate short foot-print field-plate gates for GaN based high electron mobility transistors (HEMTs).

For our process solutions of GaN power device fabrication, please visit the page below.
AlGaN/GaN Etch for GaN Power Device Fabrication

Fabrication and Characterization of a Novel Nanoscale Thermal Anemometry Probe

Margit Vallikivi and Alexander J. Smits
Department of Mechanical and Aerospace Engineering, Princeton University, Princeton, NJ 08544 USA
Journal of Microelectromechanical Systems (2014) 23 , 4

Samco Silicon DRIE System at Princeton University was used for slope formation from a silicon substrate to fabricate a MEMS-based nanoscale thermal anemometry probe.

For more details of our deep silicon etching capabilities using the Bosch Process, please visit the page below.
Si DRIE (Deep Reactive Ion Etching) for MEMS and TSV
Deep Silicon Etching Process Data Using the Bosch Process

A Widely Tunable Narrow Linewidth RF Source Integrated in a Heterogeneous Photonic Module

David W. Grund, Garrett A. Ejzak, Garrett J. Schneider, Janusz Murakowski and Dennis W. Prather
Dept. of Electr. & Comput. Eng., Univ. of Delaware, Newark, DE, USA
Journal of Lightwave Technology (2014) 32, 7, pp. 1363-1369

SAMCO ICP Etch System was used for silicon plasma etching in silicon-photonic integrated circuit fabrication.
For more details of our silicon plasma etching capabilities, please visit the page below.
Si Dry Etching Process (RIE, ICP-RIE or XeF₂ Etch)

Metal-Containing Block Copolymer Thin Films Yield Wire Grid Polarizers with High Aspect Ratio

So Youn Kim ¹, Jessica Gwyther ², Ian Manners ², Paul M. Chaikin ³, and Richard A. Register ¹
1 Department of Chemical and Biological Engineering, Princeton University, Princeton, NJ, USA
2 School of Chemistry, University of Bristol, Bristol, United Kingdom
3 Department of Physics, New York University, New York, USA
Adv. Mater., 26, 791-795 (2014)

Samco Silicon DRIE System at Princeton University was used for deep silicon etching using the Bosch Process.

For more details of our deep silicon etching capabilities, please visit the page below.
Si DRIE (Deep Reactive Ion Etching) for MEMS and TSV
Silicon Deep Etching Using the Bosch Process

Structural Optimization of Metallic Infrared Filters Based on Extraordinary Optical Transmission

Makoto Ohkado¹, Tsuyoshi Nomura¹, Atushi Miura¹, Hisayoshi Fujikawa¹, Naoki Ikeda², Yoshimasa Sugimoto² and Shinji Nishiwaki^3
1Toyota Central R&D Labs. Inc., 41-1 Yokomichi, Nagakute, Aichi 480-1192, Japan
²National Institute for Material Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
³Kyoto University, Yoshida Honmachi, Sakyo-ku, Kyoto, Kyoto 606-8501, Japan
Transactions of the Materials Research Society of Japan (2013) 38, No. 2 p. 167-170

SiO₂ plasma etching and Al plasma etching were performed using Samco RIE system and ICP etch system, respectively to fabricate hole array structures of the infrared filter.

For more details of our SiO₂ dry etching capabilities, please visit the page below.
SiO₂ Dry Etching Process (RIE or ICP-RIE)

A transfer technique of stress sensors for versatile applications

C. Dou, H. Yang, Y. Wu and X. Li
State Key Laboratory of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, China
Nano/Micro Engineered and Molecular Systems (NEMS), 2013 8th IEEE International Conference on, Suzhou, 2013, pp. 931-934.
doi: 10.1109/NEMS.2013.6559876

Samco open-load RIE etch system was used for SiO₂ layer removal in device fabrication.

For more details of our SiO₂ plasma etching capabilities, please visit the page below.
SiO₂ Dry Etching Process (RIE or ICP-RIE)

Periodic Si nanopillar arrays by anodic aluminum oxide template and catalytic etching for broadband and omnidirectional light harvesting

Hsin-Ping Wang¹, Kun-Tong Tsai^1,2, Kun-Yu Lai¹, Tzu-Chiao Wei¹, Yuh-Lin Wang² and Jr-Hau He^1
1Institute of Photonics and Optoelectronics, & Department of Electrical Engineering, National Taiwan University,
Taipei 10617, Taiwan
²Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, Taiwan
Optics Express (2012) 20,S1, pp. A94-A103

Samco RIE etcher was used for silicon nanopillar fabrication by silicon plasma etching against anodic aluminum oxide (AAO) mask.

For more information on our silicon plasma etching process capabilities including the Bosch Process etching, please visit the process data pages below.
Silicon Plasma Etching (RIE or ICP Etch)
Silicon Deep Etching Using the Bosch Process

For more detail specs of our RIE etch equipment, please visit the product page below.
RIE Plasma Etcher

Miniature Fuel Cell with Monolithically Fabricated Si Electrodes-Reduction of Pt Usage by Pd-Pt Catalyst

Takayuki Honjo, Taku Matsuzaka and Masanori Hayase
Tokyo University of Science, Noda, Chiba, Japan
Presented at Power MEMS 2010, Nov 30-Dec 3, Leuven, Belgium

Samco RIE Etcher was used for silicon plasma etching over Cu mask in fuel channel fabrication of miniature fuel cells.

For more details of our silicon etching technologies, please visit the process data pages below.
Si Dry Etching Process (RIE, ICP-RIE or XeF2 Etch)
Deep Silicon Trench/Via Hole Etching using Bosch Process

Fast patterning and dry-etch of SiNx for high resolution nanoimprint templates

Shu Zhen¹, Wan Jing¹, Lu Bingrui¹, Xie Shenqi¹, Chen Yifang²., Qu Xinping¹ and Liu Ran^1
1 State Key Laboratory of ASIC and System, Department of Microelectronics, Fudan University, Shanghai 200433, China
² Micro and Nanotechnology Centre, Rutherford Appleton Laboratory, Chilton, Didcot, Oxon, OX11 0QX, UK
Journal of Semiconductors (2009) 30, 6

SAMCO Plasma Etching System was used for patterning of SiN_x film (SiN_x plasma etching) with high aspect ratio and vertical sidewalls.