Direct Growth and Controlled Coalescence of Thick AlN Template on Micro-circle Patterned Si Substrate

Binh Tinh Tran, Hideki Hirayama, Noritoshi Maeda, Masafumi Jo, Shiro Toyoda and Norihiko Kamata
Quantum Optodevice Laboratory, Institute of Physical and Chemical Research (RIKEN), 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
Sci Rep. (2015) 5 14734.

SiO2 film was deposited on Si substrate, using Samco PECVD system.
Then, Si was etched over SiO2 film, using Samco ICP etcher for microscale patterning.

For more details of our SiO₂ PECVD & Si plasma etching capabilities, please visit the process data pages below.
SiO₂ PECVD Process Data
Silicon Plasma Etching Process Data (RIE or ICP Etch)

Thin-film edge electrode lithography enabling low-cost collective transfer of nanopatterns

Yongfang Li^1,2, Akihiro Goryu¹, Kunhan Chen², Hiroshi Toshiyoshi² and Hiroyuki Fujita^2
1 Corporate Research & Development Center, Toshiba Corporation, Kawasaki, JAPAN
² The University of Tokyo, Tokyo, JAPAN
Presented at 2015 28th IEEE International Conference on Micro Electro Mechanical Systems (MEMS)

Samco open-load RIE system was used for silicon dry etching over oxide to transfer the oxide pattern in new lithography process development.

For our process capabilities of silicon dry etching for device fabrication please visit the process data pages below.
Si Dry Etching Process (RIE, ICP-RIE or XeF₂ Etch)
Deep Silicon Trench/Via Hole Etching using Bosch Process

High precision fabrication of antennas and sensors

A. Balcytis^1,2,3, G. Seniutinas^1,2, D. Urbonas^1,3, M. Gabalis³ K. Vaskevicius³, R. Petruskevicius³, G. Molis⁴, G. Valusis⁵ and S. Juodkazis^1,2
1 Centre for Micro-Photonics and Industrial Research Institute Swinburne, Faculty of Engineering and Industrial Sciences, Swinburne University of Technology, Hawthorn, VIC 3122, Australia
² Melbourne Centre for Nanofabrication, 151 Wellington Road, Clayton, VIC 3168, Australia
³ Institute of Physics, Center for Physical Sciences and Technology, 231 Savanoriu Avenue, LT-02300 Vilnius, Lithuania
⁴ Teravil Ltd, Vilnius, LT 01108, Lithuania
⁵ Semiconductor Physics Institute, Center for Physical Science and Technology, 11 A. Gostauto st., LT01108 Vilnius, Lithuania
Proc. SPIE 9446, Ninth International Symposium on Precision Engineering Measurement and Instrumentation, 94461G (March 6, 2015); doi:10.1117/12.2180814

SOI waveguide was fabricated using Samco ICP etch system for plasma etching of silicon against Cr mask.
For our process examples of silicon plasma etching, please visit the page below.
Si Dry Etching Process (RIE, ICP-RIE or XeF₂ Etch)

Packaging and design of a heterogeneous dual laser chip for a widely tunable spectrally pure optical RF source

David W. Grund Jr., Garrett J. Schneider, Janusz Murakowski, and Dennis W. Prather
Electrical and Computer Engineering, University of Delaware, Newark, Delaware, USA
Optics Express (2014) 22, 17, pp. 19838-19849

Samco ICP Etch System was used for silicon fine etching.
Then, Samco PECVD System was used for SiO₂ layer deposition to isolate a metal heater from the etched silicon layer.

For details of SiO₂ PECVD process capabilities, please visit the page below.
SiO₂ PECVD Process

A Widely Tunable Narrow Linewidth RF Source Integrated in a Heterogeneous Photonic Module

David W. Grund, Garrett A. Ejzak, Garrett J. Schneider, Janusz Murakowski and Dennis W. Prather
Dept. of Electr. & Comput. Eng., Univ. of Delaware, Newark, DE, USA
Journal of Lightwave Technology (2014) 32, 7, pp. 1363-1369

SAMCO ICP Etch System was used for silicon plasma etching in silicon-photonic integrated circuit fabrication.
For more details of our silicon plasma etching capabilities, please visit the page below.
Si Dry Etching Process (RIE, ICP-RIE or XeF₂ Etch)

Periodic Si nanopillar arrays by anodic aluminum oxide template and catalytic etching for broadband and omnidirectional light harvesting

Hsin-Ping Wang¹, Kun-Tong Tsai^1,2, Kun-Yu Lai¹, Tzu-Chiao Wei¹, Yuh-Lin Wang² and Jr-Hau He^1
1Institute of Photonics and Optoelectronics, & Department of Electrical Engineering, National Taiwan University,
Taipei 10617, Taiwan
²Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, Taiwan
Optics Express (2012) 20,S1, pp. A94-A103

Samco RIE etcher was used for silicon nanopillar fabrication by silicon plasma etching against anodic aluminum oxide (AAO) mask.

For more information on our silicon plasma etching process capabilities including the Bosch Process etching, please visit the process data pages below.
Silicon Plasma Etching (RIE or ICP Etch)
Silicon Deep Etching Using the Bosch Process

For more detail specs of our RIE etch equipment, please visit the product page below.
RIE Plasma Etcher

Miniature Fuel Cell with Monolithically Fabricated Si Electrodes-Reduction of Pt Usage by Pd-Pt Catalyst

Takayuki Honjo, Taku Matsuzaka and Masanori Hayase
Tokyo University of Science, Noda, Chiba, Japan
Presented at Power MEMS 2010, Nov 30-Dec 3, Leuven, Belgium

Samco RIE Etcher was used for silicon plasma etching over Cu mask in fuel channel fabrication of miniature fuel cells.

For more details of our silicon etching technologies, please visit the process data pages below.
Si Dry Etching Process (RIE, ICP-RIE or XeF2 Etch)
Deep Silicon Trench/Via Hole Etching using Bosch Process