Category: SiNx Etch
Nanofabrication of 10-nm T-shaped gates using a double patterning process with electron beam lithography and dry etch
Jinhai Shao1, Jianan Deng1, W. Lu2 and Yifang Chen1
1Fudan University (China), 2Ohio State University (United States)
J. of Micro/Nanolithography, MEMS, and MOEMS, 16(3), 033508 (2017).
T-shaped gates with the footprint scaling down to 10 nm were fabricated using a double patterning procedure (electron beam lithography and dry etching). Samco Reactive Ion Etching Tool RIE-10NR was used for pattern transfer of metal nanoslit on SiNx layer in fluorine-based chemistry.
Planar Indium Tin Oxide Heater for Improved Thermal Distribution for Metal Oxide Micromachined Gas Sensors
M. Cihan Çakır1,2 ,Deniz Çalışkan1, Bayram Bütün1 and Ekmel Özbay1,3
1 Nanotechnology Research Center, Bilkent University, Ankara 06800, Turkey
2 Department of Nanotechnology and Nanomedicine, Hacettepe University, Ankara 06800, Turkey
3 Department of Electrical and Electronics Engineering, Department of Physics, Bilkent University, Ankara 06800, Turkey
Samco PECVD system at Bilkent University was used for Si3N4 film deposition to form an etch stop layer in Si wet etching. Furthermore, Samco ICP-RIE plasma etcher at Bilkent University was used for plasma etching of Si3N4 against Si etch mask for ITO gas sensor fabrication.
For more information on our Si3N4 PECVD process capabilities, please visit the process data page below.
Si3N4 PECVD Process Data
For more details of Samco PECVD systems and ICP-RIE systems, please visit product pages below.
Anode PECVD Systems for SiO2, Si3N4, a-Si, SiON, SiCN & DLC Deposition
Cathode PECVD Systems for High-speed SiO2 and Si3N4 Film Deposition
ICP-RIE Plasma Etcher for Si, SiO2, III-V & Metal Etching
Cheng-Yang Liu, Chun-Ci Li
Department of Mechanical and Electro-Mechanical Engineering, Tamkang University, New Taipei City, Taiwan
Optik – International Journal for Light and Electron Optics (2016) 127, 1, pp 267–27
Samco Reactive Ion Etching (RIE) system was used for dielectric layer etching to fabricate a microdisc device.
Jinhai Shaoa, Jianpeng Liua, Junjie Lia, Sichao Zhanga, Bing-Rui Lua, W. Lub and Yifang Chena
a State Key Lab of ASIC and System, School of Information Science and Engineering, Fudan University, Shanghai 200433, China
b Department of Electrical and Computer Engineering, Ohio State University, Columbus, OH 43210, USA
Microelectronic Engineering (2014) 143, 1, 11-14
Samco RIE System at Fudan University was used for SiNx plasma etching to fabricate short foot-print field-plate gates for GaN based high electron mobility transistors (HEMTs).
For our process solutions of GaN power device fabrication, please visit the page below.
AlGaN/GaN Etch for GaN Power Device Fabrication
Shu Zhen1, Wan Jing1, Lu Bingrui1, Xie Shenqi1, Chen Yifang2., Qu Xinping1 and Liu Ran1
1 State Key Laboratory of ASIC and System, Department of Microelectronics, Fudan University, Shanghai 200433, China
2 Micro and Nanotechnology Centre, Rutherford Appleton Laboratory, Chilton, Didcot, Oxon, OX11 0QX, UK
Journal of Semiconductors (2009) 30, 6
SAMCO RIE Plasma Etching System was used for patterning of SiNx film (SiNx plasma etching) with high aspect ratio and vertical sidewalls.