Nanofabrication of 10-nm T-shaped gates using a double patterning process with electron beam lithography and dry etch

Jinhai Shao¹, Jianan Deng¹, W. Lu² and Yifang Chen^1
1Fudan University (China), ²Ohio State University (United States)
J. of Micro/Nanolithography, MEMS, and MOEMS, 16(3), 033508 (2017).

T-shaped gates with the footprint scaling down to 10 nm were fabricated using a double patterning procedure (electron beam lithography and dry etching). Samco Reactive Ion Etching Tool RIE-10NR was used for pattern transfer of metal nanoslit on SiN_x layer in fluorine-based chemistry.

Planar Indium Tin Oxide Heater for Improved Thermal Distribution for Metal Oxide Micromachined Gas Sensors

M. Cihan Çakır^1,2 ,Deniz Çalışkan¹, Bayram Bütün¹ and Ekmel Özbay^1,3
1 Nanotechnology Research Center, Bilkent University, Ankara 06800, Turkey
² Department of Nanotechnology and Nanomedicine, Hacettepe University, Ankara 06800, Turkey
³ Department of Electrical and Electronics Engineering, Department of Physics, Bilkent University, Ankara 06800, Turkey

Samco PECVD system at Bilkent University was used for Si₃N₄ film deposition to form an etch stop layer in Si wet etching. Furthermore, Samco ICP-RIE plasma etcher at Bilkent University was used for plasma etching of Si₃N₄ against Si etch mask for ITO gas sensor fabrication.

For more information on our Si₃N₄ PECVD process capabilities, please visit the process data page below.
Si₃N₄ PECVD Process Data

For more details of Samco PECVD systems and ICP-RIE systems, please visit product pages below.
Anode PECVD Systems for SiO₂, Si₃N₄, a-Si, SiON, SiCN & DLC Deposition
Cathode PECVD Systems for High-speed SiO₂ and Si₃N₄ Film Deposition
ICP-RIE Plasma Etcher for Si, SiO₂, III-V & Metal Etching

Photonic nanojet induced modes generated by a chain of dielectric microdisks

Cheng-Yang Liu, Chun-Ci Li
Department of Mechanical and Electro-Mechanical Engineering, Tamkang University, New Taipei City, Taiwan
Optik – International Journal for Light and Electron Optics (2016) 127, 1, pp 267–27

Samco Reactive Ion Etching (RIE) system was used for dielectric layer etching to fabricate a microdisc device.

Nanofabrication of air-spaced field-plate gates with ultra-short footprint

Jinhai Shao^a, Jianpeng Liu^a, Junjie Li^a, Sichao Zhang^a, Bing-Rui Lu^a, W. Lu^b and Yifang Chen^a
a State Key Lab of ASIC and System, School of Information Science and Engineering, Fudan University, Shanghai 200433, China
^b Department of Electrical and Computer Engineering, Ohio State University, Columbus, OH 43210, USA
Microelectronic Engineering (2014) 143, 1, 11-14

Samco RIE System at Fudan University was used for SiNx plasma etching to fabricate short foot-print field-plate gates for GaN based high electron mobility transistors (HEMTs).

For our process solutions of GaN power device fabrication, please visit the page below.
AlGaN/GaN Etch for GaN Power Device Fabrication

Fast patterning and dry-etch of SiNx for high resolution nanoimprint templates

Shu Zhen¹, Wan Jing¹, Lu Bingrui¹, Xie Shenqi¹, Chen Yifang²., Qu Xinping¹ and Liu Ran^1
1 State Key Laboratory of ASIC and System, Department of Microelectronics, Fudan University, Shanghai 200433, China
² Micro and Nanotechnology Centre, Rutherford Appleton Laboratory, Chilton, Didcot, Oxon, OX11 0QX, UK
Journal of Semiconductors (2009) 30, 6

SAMCO Plasma Etching System was used for patterning of SiN_x film (SiN_x plasma etching) with high aspect ratio and vertical sidewalls.