Category: a-Si PECVD
Effects of epitaxial growth on the optimum condition of intrinsic amorphous silicon oxide buffer layers for silicon heterojunction solar cells
He Zhanga, Kazuyoshi Nakadab, Makoto Konagaia, c
a MEXT/FUTURE-PV Innovation Research, Japan Science and Technology Agency (JST), 2-2-9 Machiike-dai, Koriyama, Fukushima 963-0298, Japan
b Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1-NE-15 Ookayama, Meguro-ku, Tokyo 152-8552, Japan
c Advanced Research Laboratories, Tokyo City University, 8-15-1, Todoroki, Setagaya-ku, Tokyo 158-0082, Japan
Thin Solid Films (2017) 628 pp 214–220
Samco PECVD tool PD-2203L was used for deposition of amorphous silicon oxide buffer layer for silicon solar cell application. Excellent film properties of surface passivation were achieved. For more details of our PECVD lineup and capabilities, please visit the product pages below.
Scientific Paper on Silicon Solar Cells from Japan Science and Technology and Tokyo Institute of Technology
High-performance a-Si1–xOx:H/c-Si heterojunction solar cells realized by the a-Si:H/a-Si1–xOx:H stack buffer layer
He Zhang1, Kazuyoshi Nakada2, Shinsuke Miyajima2 and Makoto Konagai1,2
Phys. Status Solidi RRL (2015) 9: 225–229.
1 MEXT/FUTURE-PV Innovation Research, Japan Science and Technology (JST), Koriyama, Fukushima, Japan
2 Department of Physical Electronics, Tokyo Institute of Technology, Meguro-ku, Tokyo, Japan
Samco PECVD system was used for silicon thin film deposition in solar cell fabrication.
Swift heavy ion irradiation induced microstructural modification and evolution of photoluminescence from Si rich a-SiNx:H
R K Bommali1, S Ghosh1, G Vijaya Prakash1, D Kanjilal2, P Mondal3, A K Srivastava3 and P Srivastava1
1 Nanostech and Nanophotonics Laboratories, Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110 016, India
2 Materials Science Division, Inter-University Accelerator Centre (IUAC), Aruna Asaf Ali Marg, New Delhi 110067, India
3 Indus Synchrotron Utilisation Division, Raja Ramanna Centre for Advanced Technology, Indore 452 013, India
Mater. Res. Express (2015) 2 046204
SAMCO PECVD system was used for silicon film deposition.
Scientific Paper on a-Si:H and a-Si3N4 Film Properties from University of West Bohemia, Czech Republic
Transition from a-Si:H to Si3N4 in thin films deposited by PECVD technology from silane diluted with nitrogen
P. Šutta1, P. Calta1, J. Müllerová2, M. Netrvalová1, R. Medlín1, J. Savková1 and V. Vavruňková1
1 New Technologies – Research Centre, University of West Bohemia, Univerzitní 8, 306 14 Pilsen, Czech Republic
2 Institute of A. Stodola, Faculty of Electrical Engineering, University of Žilina, Kpt. J. Nálepku 1390, 031 01 Lipt. Mikuláš, Slovak Republic
Presented at 2014 10th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM)
Samco PECVD System was used for the deposition of a-SiN:H thin films and a-Si:H/a-Si3N4 multi-layered films.
For more details of our Si3N4 PECVD process capabilities, please visit the page below.
Si3N4 PECVD Process
Scientific Paper on Film Properties of a-Si:H and SiO2 Plasma CVD Films by University of West Bohemia, Czech Republic
Investigation of the transition phases from amorphous silicon-based multilayers to silicon nanostructures by in situ X-ray diffraction
Solomon Agbo, Pavel Calta, Pavol Sutta, Veronika Vavrunkova, Marie Netrvalova and Lucie Prusakova
New Technologies Research Centre, University of West Bohemia, Pilsen, Czech Republic
physica status solidi (a) (2014) 211, 7, 1512–1518
Samco Plasma CVD System was used for deposition of multilayers comprising alternating layers of a-Si:H and SiO2.
For more details of our SiO2 Plasma CVD technologies, please visit the process data page below.
SiO2 Plasma CVD Process Data
Scientific Paper on Fluorescence Detection Device Fabrication Using a-Si PECVD Process by AIST, Japan
Heterogeneously integrated laser-induced fluorescence detection devices: Integration of an excitation source
Toshihiro Kamei, Keiko Sumitomo, Sachiko Ito, Ryo Takigawa, Noriyuki Tsujimura, Hisayuki Kato, Takeshi Kobayashi and Ryutaro Maeda
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8564, Japan
Japanese Journal of Applied Physics (2014) 53, 06JL02
P-doped, undoped and B-doped a-Si:H film deposition were performed using SAMCO PECVD System for microfluidic device fabrication.