High-performance a-Si_1–xO_x:H/c-Si heterojunction solar cells realized by the a-Si:H/a-Si_1–xO_x:H stack buffer layer

He Zhang¹, Kazuyoshi Nakada², Shinsuke Miyajima² and Makoto Konagai^1,2
Phys. Status Solidi RRL (2015) 9: 225–229.
1 MEXT/FUTURE-PV Innovation Research, Japan Science and Technology (JST), Koriyama, Fukushima, Japan
2 Department of Physical Electronics, Tokyo Institute of Technology, Meguro-ku, Tokyo, Japan

Samco PECVD system was used for silicon thin film deposition in solar cell fabrication.

Swift heavy ion irradiation induced microstructural modification and evolution of photoluminescence from Si rich a-SiN_x:H

R K Bommali¹, S Ghosh¹, G Vijaya Prakash¹, D Kanjilal², P Mondal³, A K Srivastava³ and P Srivastava¹
1 Nanostech and Nanophotonics Laboratories, Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110 016, India
2 Materials Science Division, Inter-University Accelerator Centre (IUAC), Aruna Asaf Ali Marg, New Delhi 110067, India
3 Indus Synchrotron Utilisation Division, Raja Ramanna Centre for Advanced Technology, Indore 452 013, India
Mater. Res. Express (2015) 2 046204

SAMCO PECVD system was used for silicon film deposition.

Athermal and High-Q Hybrid TiO₂–Si₃N₄ Ring Resonator via an Etching-Free Fabrication Technique

Feng Qiu, Andrew M. Spring, and Shiyoshi Yokoyama*
Institute for Materials Chemistry and Engineering, Kyushu University, 6-1 Kasuga-koen Kasuga-city, Fukuoka, 816-8580, Japan
ACS Photonics (2015) 2, 3 pp 405–409

Samco PECVD system was used for Si3N4 deposition to fabricate a ring resonator.

For more details of our SiN_x PECVD process capabilities, please visit the page below.
SiN_x PECVD Process

Transition from a-Si:H to Si₃N₄ in thin films deposited by PECVD technology from silane diluted with nitrogen

P. Šutta¹, P. Calta¹, J. Müllerová², M. Netrvalová¹, R. Medlín¹, J. Savková¹ and V. Vavruňková^1
1 New Technologies – Research Centre, University of West Bohemia, Univerzitní 8, 306 14 Pilsen, Czech Republic
² Institute of A. Stodola, Faculty of Electrical Engineering, University of Žilina, Kpt. J. Nálepku 1390, 031 01 Lipt. Mikuláš, Slovak Republic
Presented at 2014 10th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM)

Samco PECVD System was used for the deposition of a-SiN:H thin films and a-Si:H/a-Si₃N₄ multi-layered films.

For more details of our Si₃N₄ PECVD process capabilities, please visit the page below.
Si₃N₄ PECVD Process

Packaging and design of a heterogeneous dual laser chip for a widely tunable spectrally pure optical RF source

David W. Grund Jr., Garrett J. Schneider, Janusz Murakowski, and Dennis W. Prather
Electrical and Computer Engineering, University of Delaware, Newark, Delaware, USA
Optics Express (2014) 22, 17, pp. 19838-19849

Samco ICP Etch System was used for silicon fine etching.
Then, Samco PECVD System was used for SiO₂ layer deposition to isolate a metal heater from the etched silicon layer.

For details of SiO₂ PECVD process capabilities, please visit the page below.
SiO₂ PECVD Process

Process dependency on threshold voltage of GaN MOSFET on AlGaN/GaN heterostructure

Qingpeng Wang^{a, b}, Ying ^{, b}, Takahiro Miyashita^c, Shin-ichi Motoyama^c, Liuan Li^b, Dejun Wang^a, Yasuo Ohno^b and Jin-Ping Ao^b
a School of Electronic Science and Technology, Dalian University of Technology, 2 Linggong Road, Ganjingzi District, Dalian 116024, China
^b Institute of Technology and Science, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan
^c Research and Development Department, SAMCO Inc., 36 Waraya-cho, Takeda, Fushimi-ku, Kyoto 612-8443, Japan
Solid-State Electronics (2014) 99, Pages 59–64

Samco PECVD system was used for SiO2 insulation film deposition.
This paper is collaboration work of Dalian University of Technology, The University of Tokushima and Samco.

For more details of our SiO₂ PECVD technologies, please visit the page below.
SiO₂ PECVD Process

Investigation of the transition phases from amorphous silicon-based multilayers to silicon nanostructures by in situ X-ray diffraction

Solomon Agbo, Pavel Calta, Pavol Sutta, Veronika Vavrunkova, Marie Netrvalova and Lucie Prusakova
New Technologies Research Centre, University of West Bohemia, Pilsen, Czech Republic
physica status solidi (a) (2014) 211, 7, 1512–1518

Samco Plasma CVD System was used for deposition of multilayers comprising alternating layers of a-Si:H and SiO₂.

For more details of our SiO₂ Plasma CVD technologies, please visit the process data page below.
SiO₂ Plasma CVD Process Data

Heterogeneously integrated laser-induced fluorescence detection devices: Integration of an excitation source

Toshihiro Kamei, Keiko Sumitomo, Sachiko Ito, Ryo Takigawa, Noriyuki Tsujimura, Hisayuki Kato, Takeshi Kobayashi and Ryutaro Maeda
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8564, Japan
Japanese Journal of Applied Physics (2014) 53, 06JL02

P-doped, undoped and B-doped a-Si:H film deposition were performed using SAMCO PECVD System for microfluidic device fabrication.

Field isolation for GaN MOSFETs on AlGaN/GaN heterostructure with boron ion implantation

Y Jiang^1,2, Q P Wang^1,2, K Tamai², L A Li², S Shinkai³, T Miyashita⁴, S-I Motoyama⁴, D J Wang^1,5, J-P Ao^2,5 and Y Ohno^2,6
1 School of Electronic Science and Technology, Dalian University of Technology, Dalian, Liaoning 116024, People’s Republic of China
² Institute of Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan
³ Center for microelectronic system, Kyushu Institute of Technology, Fukuoka 820-8502, Japan
⁴ Research and Development Department, SAMCO Inc., Kyoto 612-8443, Japan
⁵ Author to whom any correspondence should be addressed.
⁶ Present address: e-Device, Inc., Sapporo 063-0801, Japan.
Semicond. Sci. Technol. (2014) 29 055002

Samco PECVD system was used for gate oxide formation in GaN power device fabrication. This paper is collaboration work of Dalian University of Technology, The University of Tokushima, Kyushu Institute of Technology and Samco.

For our process solutions of GaN power device fabrication, please visit the page below.
AlGaN/GaN Etch for GaN Power Device Fabrication

Enhancement of electrical conductivity and electrochemical activity of hydrogenated amorphous carbon by incorporating boron atoms

Hiroshi Naragino, Kohsuke Yoshinaga, Akira Nakahara, Sakuya Tanaka and Kensuke Honda
Graduate school of Science and Engineering, Yamaguchi University, 1677-1, Yoshida, Yamaguchi-shi, Yamaguchi 753-8512, Japan
Journal of Physics: Conference Series, 441, 2013 conference 1
Process and film properties of conductive boron-doped hydrogenated amorphous carbon (B-DLC) thin films was studied in this research. Samco PECVD system at Yamaguchi University was used for DLC film deposition.

Samco offers PECVD systems and process technology for deposition of various types of films such as SiO₂, SiN_x, TiO₂, amorphous carbon (a-Si), SiON, SiCN and DLC.
For more details of our system lineup, please visit the product pages below.
Anode PECVD Systems for High-quality Film Deposition
Cathode PECVD Systems for High-speed SiO₂ and SiN_x Film Deposition under 80 °C