Category: Silicon/Dielectrics PECVD
Swift heavy ion irradiation induced microstructural modification and evolution of photoluminescence from Si rich a-SiNx:H
R K Bommali1, S Ghosh1, G Vijaya Prakash1, D Kanjilal2, P Mondal3, A K Srivastava3 and P Srivastava1
1 Nanostech and Nanophotonics Laboratories, Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110 016, India
2 Materials Science Division, Inter-University Accelerator Centre (IUAC), Aruna Asaf Ali Marg, New Delhi 110067, India
3 Indus Synchrotron Utilisation Division, Raja Ramanna Centre for Advanced Technology, Indore 452 013, India
Mater. Res. Express (2015) 2 046204
SAMCO PECVD system was used for silicon film deposition.
Feng Qiu, Andrew M. Spring, and Shiyoshi Yokoyama*
Institute for Materials Chemistry and Engineering, Kyushu University, 6-1 Kasuga-koen Kasuga-city, Fukuoka, 816-8580, Japan
ACS Photonics (2015) 2, 3 pp 405–409
Samco PECVD system was used for Si3N4 deposition to fabricate a ring resonator.
For more details of our SiNx PECVD process capabilities, please visit the page below.
SiNx PECVD Process
Scientific Paper on a-Si:H and a-Si3N4 Film Properties from University of West Bohemia, Czech Republic
Transition from a-Si:H to Si3N4 in thin films deposited by PECVD technology from silane diluted with nitrogen
P. Šutta1, P. Calta1, J. Müllerová2, M. Netrvalová1, R. Medlín1, J. Savková1 and V. Vavruňková1
1 New Technologies – Research Centre, University of West Bohemia, Univerzitní 8, 306 14 Pilsen, Czech Republic
2 Institute of A. Stodola, Faculty of Electrical Engineering, University of Žilina, Kpt. J. Nálepku 1390, 031 01 Lipt. Mikuláš, Slovak Republic
Presented at 2014 10th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM)
Samco PECVD System was used for the deposition of a-SiN:H thin films and a-Si:H/a-Si3N4 multi-layered films.
For more details of our Si3N4 PECVD process capabilities, please visit the page below.
Si3N4 PECVD Process
Packaging and design of a heterogeneous dual laser chip for a widely tunable spectrally pure optical RF source
David W. Grund Jr., Garrett J. Schneider, Janusz Murakowski, and Dennis W. Prather
Electrical and Computer Engineering, University of Delaware, Newark, Delaware, USA
Optics Express (2014) 22, 17, pp. 19838-19849
For details of SiO2 PECVD process capabilities, please visit the page below.
SiO2 PECVD Process
Scientific Paper on AlGaN/GaN MOSFET from Dalian University of Technology and The University of Tokushima
Qingpeng Wanga, b, Ying , b, Takahiro Miyashitac, Shin-ichi Motoyamac, Liuan Lib, Dejun Wanga, Yasuo Ohnob and Jin-Ping Aob
a School of Electronic Science and Technology, Dalian University of Technology, 2 Linggong Road, Ganjingzi District, Dalian 116024, China
b Institute of Technology and Science, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan
c Research and Development Department, SAMCO Inc., 36 Waraya-cho, Takeda, Fushimi-ku, Kyoto 612-8443, Japan
Solid-State Electronics (2014) 99, Pages 59–64
Samco PECVD system was used for SiO2 insulation film deposition.
This paper is collaboration work of Dalian University of Technology, The University of Tokushima and Samco.
For more details of our SiO2 PECVD technologies, please visit the page below.
SiO2 PECVD Process
Scientific Paper on Film Properties of a-Si:H and SiO2 Plasma CVD Films by University of West Bohemia, Czech Republic
Investigation of the transition phases from amorphous silicon-based multilayers to silicon nanostructures by in situ X-ray diffraction
Solomon Agbo, Pavel Calta, Pavol Sutta, Veronika Vavrunkova, Marie Netrvalova and Lucie Prusakova
New Technologies Research Centre, University of West Bohemia, Pilsen, Czech Republic
physica status solidi (a) (2014) 211, 7, 1512–1518
Samco Plasma CVD System was used for deposition of multilayers comprising alternating layers of a-Si:H and SiO2.
For more details of our SiO2 Plasma CVD technologies, please visit the process data page below.
SiO2 Plasma CVD Process Data
Scientific Paper on Fluorescence Detection Device Fabrication Using a-Si PECVD Process by AIST, Japan
Heterogeneously integrated laser-induced fluorescence detection devices: Integration of an excitation source
Toshihiro Kamei, Keiko Sumitomo, Sachiko Ito, Ryo Takigawa, Noriyuki Tsujimura, Hisayuki Kato, Takeshi Kobayashi and Ryutaro Maeda
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8564, Japan
Japanese Journal of Applied Physics (2014) 53, 06JL02
P-doped, undoped and B-doped a-Si:H film deposition were performed using SAMCO PECVD System for microfluidic device fabrication.
Y Jiang1,2, Q P Wang1,2, K Tamai2, L A Li2, S Shinkai3, T Miyashita4, S-I Motoyama4, D J Wang1,5, J-P Ao2,5 and Y Ohno2,6
1 School of Electronic Science and Technology, Dalian University of Technology, Dalian, Liaoning 116024, People’s Republic of China
2 Institute of Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan
3 Center for microelectronic system, Kyushu Institute of Technology, Fukuoka 820-8502, Japan
4 Research and Development Department, SAMCO Inc., Kyoto 612-8443, Japan
5 Author to whom any correspondence should be addressed.
6 Present address: e-Device, Inc., Sapporo 063-0801, Japan.
Semicond. Sci. Technol. (2014) 29 055002
Samco PECVD system was used for gate oxide formation in GaN power device fabrication. This paper is collaboration work of Dalian University of Technology, The University of Tokushima, Kyushu Institute of Technology and Samco.
For our process solutions of GaN power device fabrication, please visit the page below.
AlGaN/GaN Etch for GaN Power Device Fabrication
Enhancement of electrical conductivity and electrochemical activity of hydrogenated amorphous carbon by incorporating boron atoms
Hiroshi Naragino, Kohsuke Yoshinaga, Akira Nakahara, Sakuya Tanaka and Kensuke Honda
Graduate school of Science and Engineering, Yamaguchi University, 1677-1, Yoshida, Yamaguchi-shi, Yamaguchi 753-8512, Japan
Journal of Physics: Conference Series, 441, 2013 conference 1
Process and film properties of conductive boron-doped hydrogenated amorphous carbon (B-DLC) thin films was studied in this research. Samco PECVD system at Yamaguchi University was used for DLC film deposition.
Samco offers PECVD systems and process technology for deposition of various types of films such as SiO2, SiNx, TiO2, amorphous carbon (a-Si), SiON, SiCN and DLC.
For more details of our system lineup, please visit the product pages below.
Anode PECVD Systems for High-quality Film Deposition
Cathode PECVD Systems for High-speed SiO2 and SiNx Film Deposition under 80 °C
Fabrication of silicon and carbon based wide-gap semiconductor thin films for high conversion efficiency
Kohsuke Yoshinaga, Hiroshi Naragino, Akira Nakahara and Kensuke Honda
Graduate school of Science and Engineering, Yamaguchi University, 1677-1, Yoshida,
Yamaguchi-shi, Yamaguchi, 753-8512, Japan
Journal of Physics: Conference Series (2013) 441, conference 1
SAMCO PECVD System was used for deposition of Nitrogen-doped amorphous silicon carbide films (N-doped a-SiC) to investigate the film properties.