MOCVD Systems for III-Nitrides Epitaxial Growth

SAMCO Inc. > Deposition Systems > MOCVD Systems

Prodcut Lineup of MOCVD Systems

The SAMCO-VPE GaN-500 is our latest MOCVD system that is designed for epitaxial growth of III-Nitrides including Gallium Nitirde (GaN) required for high-volume GaN-based device manufacturing. At the core the MOCVD systems is the patented e-profile wall reactor. This unique design with flared profile flow guide provides significantly lower gas consumption and reactant use by up to 30% in comparison with established reactor designs. Maintenance requirements are also significantly reduced leading to dramatic cost-of-ownership benefits. Precise and stable wafer temperature control is achieved by use of multiple zone thermal resistivity heater and pyrometer.  The super-rapid gas switching and temperature ramping makes it ideal for ultra-sharp QW interfaces. Options for in-situ monitoring of wafer reflectance and curvature increase control-ability.

MOCVD Systems

MOCVD System Features

 Unique Chamber Wall

Unique Chamber Wall Design

Chamber walls are designed with flared flow guide. Small injector equipped with the flow guide reduces precursor consumption by 40%.

High Uniformity

PL Wavelength Uniformity

Average Wavelength : 475 nm
Wavelength Uniformity : σ 2.3 nm (within run)

Batch Processing Capability

Wafers in MOCVD System Chamber

A Ø550 mm carrier is capable of batch processing of Ø2 inch x 59, Ø4 inch x 18 or Ø6 inch x 6.

Contact SAMCO for more product information
Any questions? Contact us for more detail.
Contact SAMCO for more product information
Any questions? Contact us for more detail.
Contact SAMCO for more product information
Any questions? Contact us for more detail.
Contact SAMCO for more product information
Contact us for more detail.
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