Prodcut Lineup of MOCVD Systems
The SAMCO-VPE GaN-500 is our latest MOCVD system that is designed for epitaxial growth of III-Nitrides including Gallium Nitirde (GaN) required for high-volume GaN-based device manufacturing. At the core the MOCVD systems is the patented e-profile wall reactor. This unique design with flared profile flow guide provides significantly lower gas consumption and reactant use by up to 30% in comparison with established reactor designs. Maintenance requirements are also significantly reduced leading to dramatic cost-of-ownership benefits. Precise and stable wafer temperature control is achieved by use of multiple zone thermal resistivity heater and pyrometer. The super-rapid gas switching and temperature ramping makes it ideal for ultra-sharp QW interfaces. Options for in-situ monitoring of wafer reflectance and curvature increase control-ability.
MOCVD System Features
Unique Chamber Wall
Chamber walls are designed with flared flow guide. Small injector equipped with the flow guide reduces precursor consumption by 40%.
Average Wavelength : 475 nm
Wavelength Uniformity : σ 2.3 nm (within run)
Batch Processing Capability
A Ø550 mm carrier is capable of batch processing of Ø2 inch x 59, Ø4 inch x 18 or Ø6 inch x 6.