Silicon Carbide (SiC) is a compound semiconductor material which has a wide band gap, a high breakdown field and a high thermal conductivity.
The material is promising as a substrate of next-generation power device and monolithic microwave integrated circuit (MMIC).
Samco offers ICP etch systems specialized for SiO2 mask fabrication and SiC etching over the mask in SiC power device and MMIC fabrication.
The product lineup covers both R&D and production.
SiC trench etching
No micro-trenches on the bottom
Etch Rate : 775 nm/min
Etch Selectivity : 13.4 (over SiO2 mask)
SiC via hole etching
Etch Depth : 89.2 µm
Etch Rate : 1 µm/min
Etch Selectivity : 95 (over Ni mask)
Wafer Temperature : below 150°C
Anisotropic SiO2 etching for mask fabrication
Etch Depth : 6.5 µm
Etch Rate : 325 nm/min
The ICP etch systems are specially designed for high-rate SiC etching with excellent uniformity.
Also, the systems are designed for easy maintenance to reduce the downtime.
Unique and Optimized ICP Coil
Newly developed ICP coil allows high-density stable plasma discharge at low pressure for high-speed SiC etching.
High-conductance Vacuum Pump
High-conductance vacuum pump enables SiC etching at both low and high pressures, and low and high gas flows.
Height-adjustable lower electrode (air operated) enables optimization of the distance between the wafer and ICP plasma source for high etch uniformity.
Designed for Easy Maintenance
Movable Turbo Molecular Pump (TMP) unit shortens maintenance time.
Cassette and Robot
Max. 25 x ø6”wafers can be processed in each operation.