Samco offers silicon Deep Reactive Ion Etching (DRIE) process solutions using Bosch Process for emerging MEMS device industries and advanced packaging applications with TSV.
Smooth Sidewalls Process
Ultra Deep Tapered Etching
High Etch Rate
Tilt Free Process
High Aspect Ratio
Notch Free Silicon On Insulator (SOI) Etch
Plasma dicing solutions of a wide variety of materials including silicon, III-V (GaAs, InP and GaN-on-Si) and metal layers to improve die yields without chipping and physical damages to dies
Customized Plasma Dicing Solutions
No Chipping and Cracking of Dies
Narrow Street Width (less than 10 µm)
Stress Mitigation of Dies
Dicing of Various Materials (Si, GaAs, InP, GaN & Metals)
Samco provides precise AlGaN/GaN etch solutions for GaN power device fabrication.
Offset Time Reduction of AlGaN Recess Etch
Precise AlGaN Thickness Control
Damage Reduction on AlGaN Layer
High Etch Selectivity of GaN over AlGaN
Samco offers leading-edge SiC trench etching solutions to achieve high-breakdown voltage of SiC power devices.
Micro-trench Free Profile with Smooth Sidewalls
High Etch Rate
High Etch Selectivity Over SiO2 Mask
Samco provides Sapphire and GaN processing solutions to improve luminous efficiency of High Brightness Light Emitting Diodes (HB LEDs).
Patterned Sapphire Substrate (PSS) Fabrication for Higher Luminous Efficiency
Reverse-tapered GaN Etching for Device Isolation
Unlike traditional anode PECVD processes, Samco’s unique Cathode PECVD processes will enable high-speed Oxide and Nitride deposition, excellent step coverage and gap filling.
High-speed (167 nm/min) and Thick Film Deposition
Safe Deposition Without Using SiH4
Low Temperature Deposition Under 100°C
Excellent Film Properties Control
Samco provides low-temperature SiO2 & SiNx plasma CVD process solutions (under 80°C) for processing of heat-sensitive material samples, which have critical thermal budget limits during device fabrication.
Low-temperature Deposition (under 80°C)
High-rate Deposition (over 400 nm/min)
Superior Stress Control over Wafers
Low Current Leakage as Passivation
Low Light Reflection and Absorption
Samco offers photoresist removal/stripping process solutions using plasma or UV-Ozone technologies for R&D and production.
From 100 mm to 450 mm
Samco offers deprocessing solutions for Failure Analysis (FA) of electron devices.
Samco’s processes are customer-proven solutions by device manufacturers and FA labs.
Highly Selective Etching of Various Materials
Exposing up to 5 Metal Layers Without Delamination and Erosion
A Wide System Lineup From Die to 450 mm
Endpoint Detection for Precise Etch Stop
Samco’s unique plasma technologies enable plasma cleaning of metal surfaces such as copper and silver
which are popular materials as electrodes and leadframe in microelectronics packaging.
No surface oxidation
No redeposition (sputtering) of metal particles
No concern to install H2 on safety issue
Samco’s experienced plasma treatment technology enables surface activation of polymers
such as Cyclic Olefin Polymer (COP) without deteriorating material properties.
The process is beneficial to direct substrate bonding of polymer/polymer and polymer/glass for microfluidics fabrication.
Superhydrophilic surfaces of polymers
No deterioration of auto-fluorescence of COP
No pressing and heating for substrate bonding
No micro-channel pattern collapse by pressing