Scientific Paper on GaAs/AlGaAs Plasma Etching Process Development from MIT
Chamber conditioning process development for improved inductively coupled plasma reactive ion etching of GaAs/AlGaAs materials
Michael K. Connors, Jason J. Plant, Kevin G. Ray, and George W. Turner
Lincoln Laboratory, Massachusetts Institute of Technology
J. Vac. Sci. Technol. B 31, 021207 (2013)
SAMCO ICP Etching System, RIE-200iP was used for GaAs plasma etching process investigation.
For more details of our GaAs plasma etching capabilities, please visit the page below.
GaAs Dry Etching Process (ICP-RIE)