Scientific Paper on GaAs/AlGaAs Plasma Etching Process Development from MIT

February 19, 2013 Samco 2013 Customer, AlGaAs Etch, Compound Semiconductor Etching, GaAs Etch, Samco Customer Publication

Chamber conditioning process development for improved inductively coupled plasma reactive ion etching of GaAs/AlGaAs materials

Michael K. Connors, Jason J. Plant, Kevin G. Ray, and George W. Turner
Lincoln Laboratory, Massachusetts Institute of Technology
J. Vac. Sci. Technol. B 31, 021207 (2013)

SAMCO ICP Etching System, RIE-200iP was used for GaAs plasma etching process investigation.

Periodic Table GaAs

For more details of our GaAs plasma etching capabilities, please visit the page below.
GaAs Dry Etching Process (ICP-RIE)

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