Scientific Paper on High Quality InAlN/AlN/GaN HFET from Virginia Commonwealth University

October 13, 2009 Samco 2009 Customer, Compound Semiconductor Etching, GaN Etch, Power Devices, Samco Customer Publication

Effect of lattice mismatch on gate lag in high quality InAlN/AlN/GaN HFET structures

J. H. Leach, M. Wu, X. Ni, X. Li, Ü . Ö zgür, and H. Morkoç
Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond VA, 23284, USA
Phys. Status Solidi A, 207: 211–216 (2009).

The field effect transistors were fabricated using Ti/Al/Ni/Au Ohmic contacts followed by etched mesa isolation in a Samco ICP Etch System RIE-101iPH using a Cl-based chemistry.

Virginia Commonwealth University is one of Samco customers using our ICP etch system for AlGaN and GaN plasma etching processes in GaN-based power device fabrication.
Virginia Commonwealth University Microelectronics Materials & Device Laboratory website

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