Scientific Paper on GaSb Dry Etching Process Development by University of Delaware

October 28, 2008 Samco 2008 Customer, Compound Semiconductor Etching, GaSb Etch, Samco Customer Publication

Inductively coupled plasma etching of III–V antimonides in BCl3/SiCl4 etch chemistry

K. Swaminathan⁎, P.E. Janardhanan, O.V. Sulima
Department of Electrical and Computer Engineering, University of Delaware, Newark, Delaware 19716, USA
Thin Solid Films (2008) 516, Issue 23, 1 October 2008, Pages 8712–8716

Inductively coupled plasma etching process of GaSb was investigated using Samco ICP etch system.
Etch rate of 4 μm/min was achieved over photoresist mask.

For more information on our ICP etch systems, please visit the product page below.
ICP Plasma Etcher

gasb dry etching

Top