Scientific Paper on GaSb Dry Etching Process Development by University of Delaware
K. Swaminathan⁎, P.E. Janardhanan, O.V. Sulima
Department of Electrical and Computer Engineering, University of Delaware, Newark, Delaware 19716, USA
Thin Solid Films (2008) 516, Issue 23, 1 October 2008, Pages 8712–8716
Inductively coupled plasma etching process of GaSb was investigated using Samco ICP etch system.
Etch rate of 4 μm/min was achieved over photoresist mask.
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ICP Plasma Etcher