Investigating GaSb(001) Dry Etching by ICP-RIE on a non-Silicon Containing Sample Holder with no Organic Gases

Hamad A. Albrithen¹, Gale S. Petrich², Leslie A. Kolodziejski³, Abdelmajid Salhi⁴ and Abdulrahman A. Almuhanna^4
1 Physics and Astronomy, KAIN, King Saud University, Riyadh, Riyadh, Saudi Arabia.
² Research Laboratory of Electronics, MIT, Cambridge, Massachusetts.
³ Department of Electrical Engineering and Computer Science, MIT, Cambridge, Massachusetts.
⁴ National Center for Nano Technology Research, King Abdulaziz City for Science and Technology, Riyadh, Riyadh, Saudi Arabia.
MRS Proceedings 2012 1396, mrsf11-1396-o07-33
doi:10.1557/opl.2012.775.

GaSb plasma etching process over SiO₂ mask was investigated using Samco ICP etch system.
Anisotropic GaSb etching with smooth sidewalls were achieved with the recipe optimization.

For more details of our GaSb plasma etching capabilities, please visit the process data page below.
GaSb Plasma Etching