Scientific paper on 10-nm T-shaped gate fabrication by Fudan University

September 28, 2017 Samco 2017 Customer, SAMCO Customer Publication, Silicon/Dielectrics Etch, SiNx Etch

Nanofabrication of 10-nm T-shaped gates using a double patterning process with electron beam lithography and dry etch

Jinhai Shao1, Jianan Deng1, W. Lu2 and Yifang Chen1
1Fudan University (China), 2Ohio State University (United States)
J. of Micro/Nanolithography, MEMS, and MOEMS, 16(3), 033508 (2017).

T-shaped gates with the footprint scaling down to 10 nm were fabricated using a double patterning procedure (electron beam lithography and dry etching). Samco Reactive Ion Etching Tool RIE-10NR was used for pattern transfer of metal nanoslit on SiNx layer in fluorine-based chemistry.