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# Samco Inc.

USA Website Next Gen

## Sitemaps

- [XML Sitemap](https://www.samcointl.com/sitemap.xml): Contains all public & indexable URLs for this website.

## Posts

- [Samco’s 5,000th System to Support Open-Access Semiconductor Research at Tohoku University](https://www.samcointl.com/news-events/news/samcos-5000th-system-to-support-open-access-semiconductor-research-at-tohoku-university/) - Samco’s 5,000th system, an RIE-200NL etcher, will support open-access semiconductor and MEMS research and training at Tohoku University.
- [Red Cross Blood Drive Held at Samco HQ](https://www.samcointl.com/news-events/news/red-cross-blood-drive-held-at-samco-hq/) - Eighteen Samco employees participated in a blood donation drive at our Kyoto headquarters, helping maintain a stable blood supply for patients in need.
- [Samco Donates to the 2026 Venezuela Earthquake Relief Fund](https://www.samcointl.com/news-events/news/samco-donates-to-the-2026-venezuela-earthquake-relief-fund/) - Samco donated 10 million yen (~60,000 USD) to the Japanese Red Cross Society’s 2026 Venezuela Earthquake Relief Fund to support relief and recovery efforts.
- [Samco to Join UGIM 2026 at Stanford University](https://www.samcointl.com/news-events/news/samco-to-join-ugim-2026-at-stanford-university/) - Samco Inc. will attend UGIM 2026 at Stanford University from July 19–22. Visit Samco at Table #1 to discuss plasma etching, ALE, PECVD, and surface treatment solutions for micro/nanofabrication facilities.
- [Samco Presents SiO₂ ALE Etch Stabilization Research at ALD/ALE 2026](https://www.samcointl.com/news-events/news/samco-presents-sio₂-ale-etch-stabilization-research-at-ald-ale-2026/) - Samco will present ALE etch stabilization research for SiO₂ quasi-ALE using O₂ plasma at ALD/ALE 2026 in Tampa, Florida.
- [DTU Nanolab Expands Silicon DRIE Infrastructure with Etch System](https://www.samcointl.com/news-events/news/dtu-nanolab-expands-silicon-drie-infrastructure-with-etch-system/) - DTU Nanolab, Denmark’s national nanofabrication facility, will expand its silicon DRIE infrastructure with Samco’s cassette-loading RIE-800iPBC system to support advanced MEMS, photonics, and microfabrication research.
- [Matthew - Supporting customers across the U.S.](https://www.samcointl.com/about/team/matthew/) - Meet Matthew Alexander, Program Manager at Samco’s U.S. branch, and learn about his career journey, team culture, and work supporting semiconductor R&D.
- [AlGaN/GaN Etch Challenges for GaN Power Device Fabrication](https://www.samcointl.com/news-events/tech-reports/algan-gan-etch-challenges-for-gan-power-device-fabrication/) - Discover key challenges in AlGaN/GaN etching for GaN power devices, from precise layer control to reducing plasma damage and enhancing performance.
- [The Anode/Cathode Switching Function of Samco's PECVD System PD-200STL](https://www.samcointl.com/news-events/tech-reports/the-anode-cathode-switching-function-of-samcos-pecvd-system-pd-200stl/) - PECVD System PD-200STL with anode/cathode switching allows for multitude of deposition conditions and demonstrates versatility of applications.
- [Stable Device Isolation Processing for 6-Inch GaN-Based Power Devices](https://www.samcointl.com/news-events/tech-reports/stable-device-isolation-processing-for-6-inch-gan-based-power-devices/) - GaN device isolation etching using ICP-RIE and endpoint detection enables uniform processing and stable multi-wafer semiconductor production.
- [Part 1 - Introduction to Si DRIE (Silicon Deep Reactive Ion Etching)](https://www.samcointl.com/news-events/tutorials/introduction-to-si-drie/) - An introduction to Si DRIE, comparing Bosch, non-Bosch, and cryogenic processes and how Samco systems support MEMS, TSV, and packaging applications.
- [Tohoku University: Professor Mikihiko Oogane](https://www.samcointl.com/news-events/interviews/tohoku-university-professor-mikihiko-oogane/) - Professor Mikihiko Oogane discusses TMR sensors, quantum spintronics, and brain–information interfaces in magnetic sensing research at Tohoku University.
- [Kyushu Institute of Technology: Professor Akiyoshi Baba](https://www.samcointl.com/news-events/interviews/kyushu-institute-of-technology-professor-akiyoshi-baba/) - Prof. Akiyoshi Baba shares insights on CMOS/MEMS research and managing Japan’s leading open-access semiconductor facility at Kyutech’s Iizuka Campus.
- [Introduction to the Dual-Chamber ALD System AD-8002LPC](https://www.samcointl.com/news-events/tech-reports/introduction-to-the-dual-chamber-ald-system-ad-8002lpc/) - Samco’s AD-8002LPC dual-chamber ALD system enables stable TiOx deposition, reduced takt time, and flexible thermal and plasma ALD processing.
- [Introduction of the Three-Chamber CVD System PD-2203LC](https://www.samcointl.com/news-events/tech-reports/introduction-of-the-three-chamber-cvd-system-pd-2203lc/) - Overview of three-chamber CVD system PD-2203LC, enabling stable SiN/SiO2 deposition with flexible frequency options for research and production.
- [DTU Selects Samco Plasma Etching System for Quantum Photonics Research](https://www.samcointl.com/news-events/news/dtu-selects-samco-plasma-etching-system-for-quantum-photonics-research/) - The Technical University of Denmark selects Samco’s RIE-400iP plasma etching system for quantum photonics research, enabling precise III-V processing for single-photon device development.
- [IMiF Expands GaN Research Capability for Power Devices with Samco ICP-RIE Platform](https://www.samcointl.com/news-events/news/imif-expands-gan-research-capability-for-power-devices-with-samco-icp-rie-platform/) - Samco systems support IMiF’s GaN pilot line, enabling precise AlGaN/GaN etching and advancing wide bandgap semiconductor research in Europe.
- [University of Central Arkansas Students Visit Samco Production Facility](https://www.samcointl.com/news-events/news/university-of-central-arkansas-students-visit-samco-production-facility/) - UCA students visit Samco to learn about semiconductors, plasma processing, Japanese business, and Samco’s founding story.
- [Samco to Exhibit at CS MANTECH 2026 in Portland](https://www.samcointl.com/news-events/news/samco-to-exhibit-at-cs-mantech-2026-in-portland/) - Samco Inc. will exhibit at CS MANTECH 2026, taking place from May 18–21, 2026, at the Portland Marriott Downtown Waterfront in Portland, Oregon.
- [Samco Presents ALE Technologies at OneNano Mid-Atlantic Meeting](https://www.samcointl.com/news-events/news/samco-presents-ale-technologies-at-onenano-mid-atlantic-meeting/) - Samco presented ALE technologies at OneNano’s Spring Meredith Meeting, highlighting plasma-assisted etching for GaN HEMTs, diamond, and nanoscale devices.
- [Visiting Samco's Partner Companies](https://www.samcointl.com/news-events/news/visiting-samcos-partner-companies/) - New employees visited Taisei Weld and Ushikoshi to learn how precision welding and metal fabrication support Samco’s semiconductor systems.
- [Samco Strengthens Strategic Collaboration with ITRI Taiwan](https://www.samcointl.com/news-events/news/samco-strengthens-strategic-collaboration-with-itri-taiwan/) - Samco expands partnership with ITRI Taiwan, focusing on semiconductor processing, silicon photonics, and chiplet integration through joint R&D efforts.
- [Virginia Commonwealth University EMBA Students Visit Samco for Global Business and Kyoto Management Insights](https://www.samcointl.com/news-events/news/virginia-commonwealth-university-emba-students-visit-samco/) - VCU EMBA students visited Samco in Kyoto, exploring its history, semiconductor manufacturing processes, and unique Kyoto approach to business and management.
- [Samco Signs MoU with IIT Delhi to Advance Academic and Research Collaboration](https://www.samcointl.com/news-events/news/samco-signs-mou-with-iit-delhi-to-advance-academic-and-research-collaboration/) - Samco signs an MoU with IIT Delhi to expand academic and research collaboration, supporting technology exchange and joint initiatives in advanced engineering.
- [Aqua Plasma Boost® and AQ-2000BT: Excellent for Reducing Large Sized Samples of Oxidized Copper](https://www.samcointl.com/news-events/tech-reports/aqua-plasma-boost-and-aq-2000bt-excellent-for-reducing-large-sized-samples-of-oxidized-copper/) - Samco's Aqua Plasma Boost® enhances oxidized copper reduction, organic residue removal, and surface hydrophilization, supporting large wafers and semiconductor processes.
- [New Approach for Trench Type SiC MOSFET](https://www.samcointl.com/news-events/tech-reports/new-approach-for-trench-type-sic-mosfet/) - A new trench-type SiC MOSFET fabrication approach combining ICP dry etching and ALD/PECVD gate insulators for improved breakdown and device performance.
- [Surface Treatment of Gold Using Aqua Plasma®](https://www.samcointl.com/news-events/tech-reports/surface-treatment-of-gold-using-aqua-plasma/) - Aqua Plasma® treatment prevents oxidation, reduces gold surface oxides, and improves hydrophilicity for semiconductor manufacturing processes.
- [Samco and Eastern Switzerland University of Applied Sciences (OST) Announce Collaboration for Research Advancements](https://www.samcointl.com/news-events/news/samco-and-ost-announce-collaboration-for-research-advancements/) - Samco and OST launch a partnership to support European R&D, providing RIE-10NR and UV-2 systems for microtechnology and photonics research in Switzerland.
- [Samco Inc. to Construct Third R&D Facility as Demand Surges for Innovative Semiconductor Equipment](https://www.samcointl.com/news-events/news/samco-inc-to-construct-third-r-and-d-facility/) - Samco announces plans to build a third R&D facility near its Kyoto headquarters, expanding cleanroom capacity to accelerate semiconductor equipment innovation.
- [RIE-10NR Achieves Sales Milestone of 500 Units](https://www.samcointl.com/news-events/news/rie-10nr-achieves-sales-milestone-of-500-units/) - Samco’s RIE-10NR CCP-RIE system surpasses 500 units shipped, marking a major milestone for a widely adopted etching tool in global research and development.
- [FORTUNE Magazine: Kyoto's Semiconductor Success](https://www.samcointl.com/news-events/news/fortune-magazine-kyotos-semiconductor-success/) - Samco is featured in FORTUNE Businessweek on Kyoto’s semiconductor strength, highlighting Samco’s global growth, R&D expansion, and innovation rooted in Kyoto.
- [Samco Announces Sale of Advanced Etching Systems to III-V Lab in Europe](https://www.samcointl.com/news-events/news/samco-announces-sale-of-advanced-etching-systems-to-iii-v-lab-in-europe/) - Samco announces the sale of two RIE-400iP ICP-RIE systems to France-based III-V Lab to support advanced III-V semiconductor and silicon integration research.
- [Innovation with the New Plasma Source HSTC-M™](https://www.samcointl.com/news-events/tech-reports/innovation-with-the-new-plasma-source-hstc-m/) - Samco introduces the HSTC-M™ plasma source for uniform, stable ICP etching of SiC and GaN power devices up to 8-inch wafers across research and production systems.
- [Long-Term Process Stability of "PD-220 Series" Systems](https://www.samcointl.com/news-events/tech-reports/long-term-process-stability-of-pd-220-series-systems/) - Long-term data shows stable SiN deposition using Samco’s PD-220 plasma CVD systems, maintaining ±2% uniformity over six months with reduced maintenance downtime.
- [Part 2 - What is the Bosch Process (Deep Reactive Ion Etching)?](https://www.samcointl.com/news-events/tutorials/what-is-the-bosch-process/) - Learn how the Bosch process enables deep silicon DRIE with high aspect ratio features, using cyclic deposition and etching steps for anisotropic profiles and high selectivity.
- [Part 3 - Equipment Advances for the Bosch Process](https://www.samcointl.com/news-events/tutorials/equipment-advances-for-bosch/) - Learn key Bosch process hardware advances (including ICP source design, RF power control, fast gas switching, and pumping) to improve Si DRIE performance and profiles.
- [Part 4 - Loading Effect and Microloading Effect in Silicon Deep Reactive Ion Etching](https://www.samcointl.com/news-events/tutorials/loading-and-microloading-effect-si-drie/) - Explore loading and microloading effects in silicon DRIE and how process optimization improves etch uniformity and depth control in MEMS fabrication.
- [UV-Ozone Cleaning: Fundamentals, Advantages, and Applications](https://www.samcointl.com/news-events/tutorials/uv-ozone-basics/) - Learn how UV-ozone cleaning works, its advantages over plasma cleaning, and applications in semiconductor surface preparation and materials research.
- [What is Atomic Layer Deposition (ALD)?](https://www.samcointl.com/news-events/tutorials/ald-basics/) - Learn the fundamentals of Atomic Layer Deposition (ALD), a thin-film technique enabling atomic-scale thickness control, conformal coatings, and high-quality films.
- [Introduction of the Single-Wafer Aqua Plasma® System](https://www.samcointl.com/news-events/tech-reports/introduction-of-the-single-wafer-aqua-plasma-system/) - Samco's single-wafer Aqua Plasma® system for wafer cleaning and descum processes, delivering improved ashing rates, uniformity, and throughput.
- [MIT's Dr. Tomás Palacios Visits Samco to Explore Future Microelectronics Innovations](https://www.samcointl.com/news-events/news/mit-dr-tomas-palacios-visits-samco/) - MIT Professor Tomás Palacios visited Samco to discuss next-generation microelectronics, advanced materials, and potential research collaboration.
- [Cornell University EMBA Students Visit Samco Inc. to Explore Innovation and Semiconductor Leadership in Japan](https://www.samcointl.com/news-events/news/cornell-university-emba-students-visit-samco-inc/) - Cornell EMBA students visited Samco’s Kyoto headquarters to explore semiconductor innovation, leadership, and cross-cultural business insights.
- [Samco Strengthens Collaboration with IIT Delhi, Advancing Japan-India Technology and Talent Exchange](https://www.samcointl.com/news-events/news/samco-strengthens-collaboration-with-iit-delhi-advancing-japan-india-technology-and-talent-exchange/) - Samco strengthens collaboration with IIT Delhi to advance Japan–India technology exchange, energy research, and talent development.
- [Samco featured in TIME Magazine: Taking a Quantum Leap](https://www.samcointl.com/news-events/news/samco-featured-in-time-magazine-taking-a-quantum-leap/) - TIME magazine features Samco’s journey from a Kyoto garage startup to a global semiconductor equipment leader in the article “Taking a Quantum Leap.”
- [Invited Lecture at IIT Delhi Delivered by Samco Inc. Founder Osamu Tsuji](https://www.samcointl.com/news-events/news/invited-lecture-at-iit-delhi-delivered-by-samco-inc-founder-osamu-tsuji/) - Samco founder Osamu Tsuji delivered an invited lecture at IIT Delhi on Plasma CVD, ALD, and the future of thin film technologies in semiconductor research.
- [Innovation Center of NanoMedicine (iCONM): Professor Kazunori Kataoka](https://www.samcointl.com/news-events/interviews/innovation-center-of-nanomedicine-iconm-professor-kazunori-kataoka/) - Professor Kazunori Kataoka presents nanomachine-based drug delivery and the vision of “in-body hospitals” at the 2025 Samco Foundation lecture.
- [Chairman Osamu Tsuji Awarded Honorary Doctorate by Kyoto Institute of Technology](https://www.samcointl.com/news-events/news/chairman-osamu-tsuji-awarded-honorary-doctorate-by-kyoto-institute-of-technology/) - Samco Chairman Osamu Tsuji received an Honorary Doctorate from Kyoto Institute of Technology in recognition of his contributions to education and research.
- [ICP Etching Process for Realizing SiC Trench MOSFETs](https://www.samcointl.com/news-events/tech-reports/icp-etching-process-for-realizing-sic-trench-mosfets/) - The latest trench etching process using ICP etching equipment for fabrication of SiC Trench MOSFETs, a new type of MOSFETs known for high efficiency potential.
- [Atomic Layer Etching Control - Intro to ALE Systems](https://www.samcointl.com/news-events/tech-reports/atomic-layer-etching-control-intro-to-ale-systems/) - Introducing Samco’s Atomic Layer Etching (ALE) systems, detailing precise low-bias control and fast gas switching for uniform, low-damage etching processes.
- [Simultaneous Double-sided Wafer Deposition via Plasma Enhanced ALD](https://www.samcointl.com/news-events/tech-reports/simultaneous-double-sided-wafer-deposition-via-plasma-enhanced-ald/) - Report investigating simultaneous dual-surface deposition of AlOx films on silicon wafers using the Plasma Enhanced Atomic Layer Deposition (PEALD) technique.
- [TOWA and Samco Successfully Host "Kyoto Day" Technical Seminar in New Delhi](https://www.samcointl.com/news-events/news/towa-and-samco-successfully-host-kyoto-day-technical-seminar-in-new-delhi/) - TOWA and Samco co-hosted Kyoto Day in New Delhi, sharing Japan’s semiconductor innovations to support India’s growing semiconductor industry.
- [AJOU University Students Visit Samco for Industry Insights](https://www.samcointl.com/news-events/news/ajou-university-students-visit-samco-for-industry-insights/) - Ajou University students visit Samco for a hands-on look at semiconductor manufacturing and a Q&A session with CEO Osamu Tsuji during their Japan study tour.
- [The University of Tokyo: Dr. Satoshi Iwamoto and Photonics Research](https://www.samcointl.com/news-events/interviews/dr-satoshi-iwamoto-photonics-research/) - Topological, diamond, and quantum nanophotonics, redefining light control and driving next-generation photonic innovation.
- [University of Adelaide to Install RIE-400iP-ALE as Australia’s First ALE System](https://www.samcointl.com/news-events/news/university-of-adelaide-to-install-rie-400ip-ale-as-australias-first-ale-system/) - Samco’s ALE system to become Australia’s first, advancing III-V semiconductor and photonics research at the University of Adelaide.
- [Kyushu University - CSeDE: Professor Reiji Hattori](https://www.samcointl.com/news-events/interviews/kyushu-university-csede-professor-reiji-hattori/) - Research at Kyushu University explores next-gen display electronics, from AR/VR and micro-LEDs to retinal scanning and semiconductor devices.
- [Application of Aqua Plasma® for Microbumps](https://www.samcointl.com/news-events/tech-reports/aqua-plasma-for-microbumps/) - Samco's Aqua Plasma® improves microbump fabrication by enhancing photoresist and Cu hydrophilization, preventing oxidation, and enabling better plating solution penetration for fine patterns.
- [TOWA and Samco to Host "Kyoto Day" in New Delhi Ahead of SEMICON India 2025](https://www.samcointl.com/news-events/news/towa-and-samco-to-host-kyoto-day-in-new-delhi-ahead-of-semicon-india-2025/) - Kyoto Day in New Delhi brings TOWA and Samco together to showcase semiconductor innovations ahead of SEMICON India 2025.
- [Samco Inc. Completes Construction of New Advanced Technology Development Center](https://www.samcointl.com/news-events/news/samco-inc-completes-construction-of-new-advanced-technology-development-center/) - Samco opens its new Advanced Technology Development Center in Kyoto, featuring a Class 1,000 cleanroom to drive next-gen semiconductor innovation.
- [Samco Inc. donates to the Red Cross Society](https://www.samcointl.com/news-events/news/samco-inc-donates-to-the-red-cross-society/) - Samco Inc. donates 10 million JPY to the Japanese Red Cross Society, continuing its annual support for disaster relief and humanitarian efforts.
- [Ohio State University Students Visit Samco Inc. Headquarters](https://www.samcointl.com/news-events/news/ohio-state-university-students-visit-samco-inc-headquarters/) - Samco welcomed Ohio State University students to Kyoto HQ. The students explored Samco’s history and learned about the semiconductor manufacturing field.
- [Institute of Science Tokyo: Professor Yasuyuki Miyamoto](https://www.samcointl.com/news-events/interviews/institute-of-science-tokyo-professor-yasuyuki-miyamoto/) - Advancing high-speed transistors with InP and GaN, Professor Yasuyuki Miyamoto explores the future of compound semiconductors and shares insights on Samco’s key role in research.
- [Special Lecture on GaN Technology by Nagoya University Professor Jun Suda](https://www.samcointl.com/news-events/news/special-lecture-on-gan-technology-by-nagoya-university-professor-jun-suda/) - Professor Jun Suda of Nagoya University gave a special lecture at Samco on GaN devices, sharing insights on materials, processing, and future technologies.
- [Indian Students from Kyoto University's KU-STAR Program Visit Samco](https://www.samcointl.com/news-events/news/indian-students-from-kyoto-universitys-ku-star-program-visit-samco/) - Samco welcomed KU-STAR Program students from top Indian universities for a factory tour, tech talk, and cultural exchange during their academic stay in Kyoto.
- [RIKEN: Dr. Takuo Tanaka](https://www.samcointl.com/news-events/interviews/riken-dr-takuo-tanaka/) - Optical metamaterials research, including nanostructures for light manipulation and high-sensitivity molecular detection, using Samco's RIE-400iP.
- [Kyushu University (I²CNER): Dr. Shigenori Fujikawa](https://www.samcointl.com/news-events/interviews/dr-shigenori-fujikawa/) - Aqua Plasma® used for surface modification of CO2 separation nanomembranes.
- [ICFO: Dr. Johann Osmond](https://www.samcointl.com/news-events/interviews/dr-johann-osmond/) - Nanophotonics research, advanced applications, and the role of RIE-10NR in ICFO’s photonics projects.
- [Toyohashi University of Technology: Dr. Hiroto Sekiguchi](https://www.samcointl.com/news-events/interviews/dr-hiroto-sekiguchi/) - Bio-implantable microLED devices using RIE-200NL and PD-220NL systems.
- [Osaka Metropolitan University: Professor Masataka Higashiwaki, Ph.D.](https://www.samcointl.com/news-events/interviews/professor-masataka-higashiwaki/) - Research on Ga₂O₃ devices using RIE-200NL and other systems.
- [Hokkaido University: Professor Yasutaka Matsuo](https://www.samcointl.com/news-events/interviews/professor-yasutaka-matsuo/) - Nano, micro-fabrication technology and materials development and thermal ALD for photochemistry.
- [Northwestern University - NUFAB: Nasir Basit, PhD.](https://www.samcointl.com/news-events/interviews/northwestern-university-nufab-nasir-basit-phd/) - Micro- and nanoscale device research, deposition and etching processes using RIE and PECVD for advanced structures.
- [National Institute of Advanced Industrial Science and Technology (AIST): Takahiro Mori Ph.D.](https://www.samcointl.com/news-events/interviews/aist-takahiro-mori-ph-d/) - Research on silicon spin qubits for quantum computing, using PD-2201LC, RIE-400iPC, and RIE-230LC.

## Pages

- [Home](https://www.samcointl.com/) - Samco Inc. offers semiconductor equipment including PECVD, ALD, Plasma Etching, Plasma Cleaners, and UV-Ozone Cleaners for both R&D and production.
- [Cathode PECVD Systems](https://www.samcointl.com/products/deposition/cathode-pecvd-systems/) - Samco’s proprietary Cathode Plasma Enhanced Chemical Vapor Deposition (PECVD) systems utilize self-bias techniques to maximize ion acceleration toward the cathode, where samples are placed directly. This approach enables high deposition rates and thicker film capabilities compared to anode PECVD, especially for SiO2 films, using TEOS as a safer alternative to silane (SiH4). Operating at temperatures
- [Global Locations](https://www.samcointl.com/about/locations/) - Headquartered in Kyoto, Japan, Samco Inc. has global locations including the U.S., Europe, China, Taiwan, Southeast Asia, and more for sales and support.
- [Meet the Samco Team](https://www.samcointl.com/about/team/) - Get to know the people behind Samco’s U.S. branch. Through employee interviews, this page introduces the team members who support our customers, strengthen our operations, and contribute to Samco’s growth in North America. Learn more about their roles, experiences, and perspectives on working at Samco. Matthew – Supporting customers across the U.S.TeamJune 4, 2026Meet Matthew
- [InP Etching](https://www.samcointl.com/processes/etching/inp-etching/) - Advanced InP etching with high uniformity, smooth sidewalls, and accurate profile control for laser diodes, photonic devices, and high-speed RF applications.
- [News & Events](https://www.samcointl.com/news-events/) - Stay up to date with Samco's latest news and upcoming events with our comprehensive coverage.
- [About](https://www.samcointl.com/about/) - Explore Samco's company overview, global locations, and our history timeline - from small garage start-up to international success story.
- [Request Equipment Information](https://www.samcointl.com/contact/request-equipment-information/) - Samco’s team can help identify suitable deposition, etching, or surface treatment systems for R&D or production requirements.
- [Stress control of SiN deposition](https://www.samcointl.com/processes/deposition/anode-pecvd/stress-control-of-sin-deposition/) - Products PD-2201LC Linear control of stress Results of SiN deposition on a plasma enhanced CVD system for mass production. There is no stress change after annealing and a wide process window and control range is achieved. Request more information Back Share
- [Deposition of SiN on reversed mesa shape](https://www.samcointl.com/processes/deposition/anode-pecvd/deposition-of-sin-on-reversed-mesa-shape/) - Products PD-3800L Excellent step coverage This process demonstrates the deposition of SiN as a passivation film on reverse mesa structures using an anode-coupled plasma-enhanced chemical vapor deposition (PECVD) system designed for large-area batch processing. The results highlight excellent step coverage, with uniform deposition conforming to the unique geometry of the mesa, ensuring reliable surface protection
- [Anode PECVD](https://www.samcointl.com/processes/deposition/anode-pecvd/) - Plasma Enhanced Chemical Vapor Deposition (PECVD) is a highly efficient method for depositing thin films by introducing reactive gases into a plasma state. This process generates active radicals and ions, facilitating chemical reactions on the target substrate to form the desired film. A key advantage of PECVD is its ability to operate at lower temperatures
- [Markets](https://www.samcointl.com/markets/) - Market solutions for semiconductor fabrication, including SiC/GaN devices, GaAs VCSELs, InP Laser Diodes, MEMS, filters, TSVs, and advanced packaging.
- [GaN Etching](https://www.samcointl.com/processes/etching/gan-etching/) - Samco’s advanced GaN etching process (plasma dry etching) enables high-quality Gallium Nitride device fabrication for LED, power, and RF device applications.
- [Silicon Etching & DRIE](https://www.samcointl.com/processes/etching/si-etching/) - Leveraging decades of expertise, Samco offers high precision and high-speed etching of Silicon and related materials.Samco was the first of Japan’s semiconductor process equipment manufacturers to obtain a Bosch Process license. Using our latest patented Tornado ICP® technology and harnessing the Bosch Process, Samco’s Si DRIE systems have proven effective in deep, vertical, high-speed Si
- [Atomic Layer Deposition (ALD) Systems](https://www.samcointl.com/products/deposition/ald-systems/) - Atomic Layer Deposition (ALD) systems for atomic-scale processing of various devices including next-generation power devices and nano-electronics.
- [Product Info Request](https://www.samcointl.com/contact/product-information/) - Contact Samco’s sales team for product information, equipment specifications, and support for semiconductor processing applications.
- [Plasma Cleaning Systems](https://www.samcointl.com/products/surface-treatment/plasma-cleaning-systems/) - Samco’s Plasma Cleaners are parallel-plate systems capable of cleaning organic and inorganic contamination from the surface of samples. The process chamber allows the user to install multiple electrode shelves, and the flexibility of the shelf electrode configuration supports batch processing of a wide range of products, from research to high volume production. Plasma Cleaning System
- [Surface Treatment Systems](https://www.samcointl.com/products/surface-treatment/) - Samco’s Surface Treatment Systems provide comprehensive cleaning solutions tailored to ensure the highest quality and consistency in surface preparation. Using advanced plasma and UV ozone techniques, these systems remove organic and inorganic contaminants, enabling optimal adhesion and performance of films and coatings.Our Aqua Plasma® Cleaners leverage environmentally friendly water vapor plasma to reduce oxides, remove
- [Effect of stage temperature on etch rate](https://www.samcointl.com/processes/surface-treatment/uv-ozone/effect-of-stage-temperature-on-etch-rate/) - Products UV Ozone Cleaners Process temperature up to 300°C Ozone generator provides a higher ozone concentration and sample stage heater allows process temperature control up to 300°C. These features increase the reactive oxygen species during the process and improve the etch rate. Request more information Back Share
- [SiC via hole etching for GaN HEMT](https://www.samcointl.com/processes/etching/compound-semiconductor-etching/sic-via-hole-etching-for-gan-hemt/) - High-rate SiC via hole etching for GaN HEMT devices using ICP plasma, achieving 1.3 µm/min anisotropic etching with wafer temperatures below 150°C.
- [Plasma Cleaning](https://www.samcointl.com/processes/surface-treatment/plasma-cleaning/) - Samco Plasma Cleaning technology offers versatile surface treatment solutions using a range of plasma processes, including PE (Plasma Etching), RIE (Reactive Ion Etching), and DS (Downstream). These processes are suitable for cleaning and modifying the surface properties of various materials, such as plastics, metals, and microelectronics, by improving wettability, removing contaminants, and enhancing adhesion. With
- [Desmear for printed circuit boards](https://www.samcointl.com/processes/surface-treatment/plasma-cleaning/desmear-printed-circuit-boards/) - Products PC-2000 Removal of smear (organic residue) Organic smear at the bottom of the via hole after laser processing is a problem in the build-up structure of a printed circuit board where one conductor layer is stacked one by one and interlayer connections are made with laser vias. Traditionally, it has been cleaned with chemicals
- [Hydrophilic treatment](https://www.samcointl.com/processes/surface-treatment/plasma-cleaning/hydrophilic-treatment/) - Products PC-2000 Improving wettability and adhesiveness Resin, metal and glass are made hydrophilic by plasma treatment. This is due to the formation of polar (functional) groups, such as hydroxyl and carboxyl groups, or because dirt from organic matter is washed away, exposing metals and glass with high surface tension. In general, when the surface is
- [Processes](https://www.samcointl.com/processes/) - Samco's extensive processing data for plasma deposition (ALD, CVD), precise etching for III-V materials, SiC, Si DRIE, and innovative surface treatments.
- [Etching](https://www.samcointl.com/processes/etching/) - Samco offers precise, cost-effective, and safe plasma etching processes for various materials, surpassing traditional wet etching methods.
- [Compound Semiconductor Etching](https://www.samcointl.com/processes/etching/compound-semiconductor-etching/) - Samco offers high precision and high speed processing of III-V compound semiconductors such as GaN, GaAs, InP and quaternary materials.
- [GaAs Etching](https://www.samcointl.com/processes/etching/gaas-etching/) - Advanced GaAs etching with high uniformity, accurate endpoint control, and precise profiles for VCSEL, MicroLED, and photonic device manufacturing.
- [Photonic crystal](https://www.samcointl.com/processes/etching/compound-semiconductor-etching/photonic-crystal/) - Products RIE-400iP Vertical Sidewalls The system of semiconductor quantum dots coupled with nano-resonators is expected to be applied to quantum photonics devices and quantum information devices. In order to achieve this, it is necessary to reduce the size of the resonator and at the same time to realize a high Q value in order to
- [Anode PECVD Systems](https://www.samcointl.com/products/deposition/anode-pecvd-systems/) - Plasma Enhanced Chemical Vapor Deposition (PECVD) is a technology which forms a thin film by generating active radicals and ions on a target substrate by turning a reactive gas into a plasma state and causing chemical reactions on the target substrate to be deposited. It is used to deposit silicon nitride film (SiN) as a
- [Aqua Plasma® Cleaners](https://www.samcointl.com/products/surface-treatment/aqua-plasma-cleaners/) - Aqua Plasma® Cleaners (AQ-Series) are a lineup of plasma processing equipment that mainly uses water vapor (H₂O). These systems can perform safe and environmentally friendly surface treatments such as oxide reduction, organic contaminants cleaning, resin bonding, and superhydrophilization. Aqua Plasma® Cleaners Lineup Aqua Plasma® Cleaner AQ-2000 Scalable system for batch processing 406 x 413 mm
- [UV Ozone Cleaning Systems](https://www.samcointl.com/products/surface-treatment/uv-ozone-cleaning-systems/) - Samco’s UV Ozone Cleaners use a unique combination of ultraviolet irradiation, ozone, and stage heating to gently, yet effectively, remove organic materials from a variety of substrates, including silicon, glass, compound semiconductors (GaN, SiC, GaAs, and InP), sapphire, ceramics, and more. Today our product line includes compact benchtop and cassette type systems for both R&D
- [Etching Systems](https://www.samcointl.com/products/etching/) - Samco’s etching systems are designed for precise material removal and surface treatment by introducing reactive gases and generating plasma for targeted etching reactions on semiconductor substrates. Our lineup includes advanced Atomic Layer Etching (ALE) for nano-level control, Inductively Coupled Plasma (ICP) etching for high-density plasma etching of III-V compounds and other materials, and Silicon Deep
- [Products](https://www.samcointl.com/products/) - Explore our open load, load lock, and cassette systems for deposition, etching, and cleaning, meeting diverse needs of production and R&D.
- [Deposition Systems](https://www.samcointl.com/products/deposition/) - Discover our advanced deposition systems, featuring ALD, Cathode PECVD, and Anode PECVD technologies for superior performance.
- [Si Deep Reactive Ion Etching (DRIE) Systems](https://www.samcointl.com/products/etching/si-drie-systems/) - Samco was the first Japanese semiconductor process equipment manufacturer to provide Silicon Deep Reactive Ion Etching (DRIE) systems using the Bosch Process. We offer DRIE systems with a range of sample sizes and number of chambers for MEMS device fabrication and TSV via-hole etching. Our systems have industry-leading process capabilities, and the product lineup covers
- [Inductively Coupled Plasma (ICP) Etching Systems](https://www.samcointl.com/products/etching/icp-systems/) - Samco’s Inductively Coupled Plasma (ICP) etching systems deliver high-density plasma solutions tailored to meet the unique process requirements of both research and production environments. Designed for reliability and durability, our compact systems enable precise etching across a wide range of materials, including III-V compound semiconductors (GaN, GaAs, InP), silicon, SiC, quartz, glass, dielectrics, and metals.
- [Atomic Layer Etching (ALE) Systems](https://www.samcointl.com/products/etching/ale-systems/) - Atomic Layer Etching (ALE) is a technology that separates the adsorption and reaction steps in the etching process and repeats each step to control etching depth at the nano-level. ALE is gaining increasing attention as semiconductor devices become finer, emerging as a key process in the development of next-generation devices. ALE is expected to find
- [Reactive Ion Etching (RIE) - Plasma Etching Systems](https://www.samcointl.com/products/etching/rie-systems/) - Samco offers reliable and durable Reactive Ion Etching (RIE) systems for R&D and production customers. Our benchtop compact RIE etcher is a suitable tool for academic device research and die deprocessing for IC failure analysis. Samco’s open load RIE systems and load lock RIE systems have a wide process window for plasma etching of various
- [Interviews](https://www.samcointl.com/news-events/interviews/) - Samco’s Interviews feature conversations with leading university professors and industry professionals, offering insights into current advancements and research in semiconductor technology. These interviews dive into topics ranging from innovative applications of photonics and quantum materials to the latest trends in fabrication technologies. Ideal for both industry experts and enthusiasts, our interviews spotlight thought leaders and Interviews with university professors, research staff, and professionals in the industry discussing their research, insights, and history in the field.
- [News](https://www.samcointl.com/news-events/news/) - Get updated on our latest developments, from product launches and technical achievements to corporate announcements and industry events. Here, you’ll find timely updates on our innovations, partnerships, and participation in conferences worldwide, providing a window into Samco’s ongoing journey in advancing technology and supporting industry progress. Samco’s 5,000th System to Support Open-Access Semiconductor Research at
- [Tutorials](https://www.samcointl.com/news-events/tutorials/) - Samco’s Tutorials provide accessible and informative overviews of various processes, technologies, and scientific concepts related to semiconductor manufacturing. Covering a wide range of topics, these tutorials are designed to support industry professionals, students, and researchers in building a strong understanding of the fundamentals and practical applications of our work. Whether you’re exploring the basics or
- [Technical Reports](https://www.samcointl.com/news-events/tech-reports/) - The latest advancements and technical reports on semiconductor processes, including etching, deposition, and surface treatment technologies.
- [Company Overview](https://www.samcointl.com/about/company-overview/) - Samco Inc. provides semiconductor process equipment for R&D and production, specializing in deposition, etching, and surface treatment technologies.
- [Events](https://www.samcointl.com/news-events/events/) - Discover exciting upcoming events, engaging exhibitions, and delve into our archives to explore past events.
- [Conformal coating of trench by ALD](https://www.samcointl.com/processes/deposition/atomic-layer-deposition/conformal-coating-of-trench-by-ald/) - Products AD-10P High aspect ratio coverage with AlOx film AlOx film was deposited on trench patterns, demonstrating conformal step coverage along the sidewalls and bottom.Open area: 1.78 µmTrench depth: 71.8 µmAspect ratio: 40.3 Request more information Back Share
- [ALD on the inner wall of a high-aspect ratio hole](https://www.samcointl.com/processes/deposition/atomic-layer-deposition/ald-on-the-inner-wall-of-a-high-aspect-ratio-hole/) - Products AD-10P Deposition of 100 nm ALD-Al₂O₃ film in a 32:1 aspect ratio structure The process demonstrates the capability of Atomic Layer Deposition (ALD) to uniformly coat high-aspect-ratio structures. A film of Al₂O₃ with a thickness of 100 nm was deposited across the entire surface of a 32:1 aspect ratio hole. The result showcases complete
- [Aqua Plasma®](https://www.samcointl.com/processes/surface-treatment/aqua-plasma/) - Samco’s Aqua Plasma® technology provides an advanced, water vapor-based surface treatment solution for a wide range of materials, including silicon, glass, metals, and polymers. It enhances surface wettability by creating hydrophilic surfaces, improving adhesion for applications like microfluidic device fabrication and robust polymer-to-polymer or polymer-to-glass bonding. Aqua Plasma effectively supports complex 3D structures, such as
- [High aspect ratio of 50:1 DRIE](https://www.samcointl.com/processes/etching/si-etching/high-aspect-ratio-of-50-to-1-drie/) - Products RIE-800iPB RIE-800BCT Achieving an aspect ratio of 52 Deep reactive ion etching (DRIE) with an aspect ratio of 52, featuring smooth sidewalls and a scallop size of less than 100 nm. The achievable etching depth is primarily limited by the mask thickness—the thicker the mask, the higher the aspect ratio that can be processed.
- [Microfluidics fabrication](https://www.samcointl.com/processes/etching/si-etching/microfluidics-fabrication/) - Products RIE-400iPB High-precision Si microfluidic channel etching Microfluidic channels with a width of 3 μm were fabricated using the Bosch process on the RIE-400iPB system. This vertical deep etching method ensures precise control over channel geometry, making it ideal for lab-on-a-chip applications and biomedical research. Photo courtesy of Osaka University Request more information Back Share
- [Imprinting mold fabrication](https://www.samcointl.com/processes/etching/si-etching/imprinting-mold-fabrication/) - Products RIE-400iPB High-precision Si molds for thermal imprinting Using the RIE-400iPB, silicon molds for thermal imprinting with a 1 µm square pattern and a height of 5 µm were successfully fabricated. This process ensures precise mold formation, enabling high-resolution pattern transfer for nanoimprint lithography and other microfabrication applications.Photo courtesy of Yamagata Research Institute of Technology
- [500 μm penetration etching](https://www.samcointl.com/processes/etching/si-etching/500-μm-penetration-etching/) - Products RIE-400iPB Deep through-hole formation with high selectivity A 100 μm-wide, 500 μm-deep through-hole structure was successfully etched using the RIE-400iPB deep silicon RIE system. The process achieved a silicon-to-thermal oxide mask selectivity of approximately 100:1, ensuring precision and stability in deep etching applications. Photo courtesy of Yamagata Research Institute of Technology Request more information Back
- [Deep Si etching with aspect ratio of 23​](https://www.samcointl.com/processes/etching/si-etching/deep-si-etching-with-aspect-ratio-of-23/) - Products RIE-800iPB RIE-800BCT RIE-400iPB Si etching for R&D applications A deep silicon structure with a width of 3 μm and a depth of 70 μm was achieved using the Bosch process on the RIE-400iPB system. This process attained a silicon-to-resist selectivity of approximately 100:1, enabling precise high-aspect-ratio etching for research and microfabrication applications. Photo courtesy of
- [Post-column mixer fabrication​](https://www.samcointl.com/processes/etching/si-etching/post-column-mixer-fabrication/) - Products RIE-400iPB Applications including biomolecular separation/detection technology A high-performance pillar array mixer was fabricated to enhance biomolecular separation and detection. This post-column sample processor efficiently mixes separated components with the processed liquid, ensuring precise analytical results. The Bosch process, performed using the RIE-400iPB silicon deep etching system, enables accurate pillar formation with optimized flow dynamics. Photo
- [450 μm pillar formation​](https://www.samcointl.com/processes/etching/si-etching/450-μm-pillar-formation/) - Products RIE-800iPB RIE-800BCT High-precision deep pillar etching without peeling Using the RIE-800iPB system, 450 μm deep pillars with a 30 μm square pattern were successfully formed, achieving a uniform profile from top to bottom without any film peeling. This process ensures excellent structural integrity, making it suitable for high-precision MEMS and microfluidic applications. Photo courtesy of
- [MEMS micromirror fabrication​](https://www.samcointl.com/processes/etching/si-etching/mems-micromirror-fabrication/) - Products RIE-800iPB RIE-800BCT High-reliability MEMS micromirror with Si nanowires This MEMS micromirror device scans space by altering the laser angle, offering high reliability through a top-down fabrication process. Using this method, thin silicon nanowires are integrated with a thick mirror surface in a single piece, enhancing durability. The compact mirror design and array placement improve
- [18 μm/min high-rate DRIE](https://www.samcointl.com/processes/etching/si-etching/18-μm-min-high-rate-drie/) - Products RIE-400iPB High-speed DRIE with the Bosch process Samco’s advanced DRIE system, RIE-400iPB, enables high-rate etching at 18 μm/min while maintaining precise profile control. By optimizing selectivity with a resist mask, we achieved a pattern width of 50 μm and a depth of 128 μm using the Bosch process. This method allows for efficient and
- [400 μm forward taper etching](https://www.samcointl.com/processes/etching/si-etching/400-μm-forward-taper-etching/) - Products RIE-800iPB RIE-800BCT High-Aspect-Ratio forward taper etching on 8-inch wafers This forward taper etching achieves a 400 μm depth with a 15 μm hole diameter on an 8-inch wafer while maintaining excellent profile quality. Deep reactive ion etching (DRIE) at this scale often faces challenges such as side etching due to bowing profiles and the
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- [Failure Analysis](https://www.samcointl.com/processes/etching/failure-analysis/) - Samco provides advanced solutions tailored for IC failure analysis to enhance device reliability and pinpoint failure modes. Leveraging decades of dry etching expertise, Samco’s systems are used globally in both production and failure analysis (FA) labs, offering precise etching that meets the stringent demands of modern semiconductor manufacturing.Our layer removal processes allow the exposure of
- [Metal/Dielectric Etching](https://www.samcointl.com/processes/etching/metal-dielectric-etching/) - Samco has extensive experience in selectively removing both dielectric (insulating) and metallic (conductive) materials. These processes include the use of many types of materials to produce smaller, more complex, and narrower features. These etching processes help to manufacture the RF filters (both SAW and BAW devices) and capacitors. SiO2 etching Sapphire etching SiO₂ etching Samco
- [Patterned sapphire substrate for HBLED](https://www.samcointl.com/processes/etching/metal-dielectric-etching/patterned-sapphire-substrate-for-hbled/) - Products RIE-350iPC Enhancing brightness and reducing defects Patterned sapphire substrate (PSS) processing involves creating a periodic cone pattern, approximately 2.5 μm in diameter, on sapphire substrates. This process reduces GaN crystal defects and enhances LED brightness by improving light extraction efficiency through internal reflections within the GaN layer. Request more information Back Share
- [150 μm deep etching of quartz](https://www.samcointl.com/processes/etching/metal-dielectric-etching/150-μm-deep-etching-of-quartz/) - Products RIE-800iP Precise and high-efficiency etching This process utilizes a Samco ICP etching system to achieve a 150 μm deep etch in quartz. The etch mask used is Ni (Nickel), with an etching rate of 400 nm/min, ensuring precise and efficient material removal for applications requiring deep, high-quality etching. Request more information Back Share
- [High-speed etching of SiO2](https://www.samcointl.com/processes/etching/metal-dielectric-etching/high-speed-etching-of-sio2/) - Products RIE-800iP Efficient and precise anisotropic processing High-speed etching of SiO2 was performed using an ICP etching system, achieving a rate of 1 μm/min. The process produced anisotropic structures with a width of 50 μm and a depth of 27.3 μm, utilizing a Cr mask for precision. Request more information Back Share
- [Atomic Layer Etching (ALE)](https://www.samcointl.com/processes/etching/atomic-layer-etching/) - Atomic Layer Etching (ALE) is a technology that separates the adsorption and reaction steps in the etching process and repeats each step to control etching depth at the nano-level. ALE is gaining increasing attention as semiconductor devices become finer, emerging as a key process in the development of next-generation devices. ALE is expected to find
- [ALE of GaN](https://www.samcointl.com/processes/etching/atomic-layer-etching/ale-of-gan/) - Explore process data for atomic layer etching (ALE) of GaN, featuring precise etch rates, excellent controllability, and applications in nanopatterning, photonic crystals, and GaN HEMTs.
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- [UV Ozone Cleaning](https://www.samcointl.com/processes/surface-treatment/uv-ozone/) - Samco’s UV ozone cleaning systems offer a sophisticated method for surface treatment by combining ultraviolet (UV) irradiation, ozone, and stage heating. This powerful, yet gentle process effectively removes organic contaminants from a wide range of substrates, including silicon, glass, and compound semiconductors such as GaN, SiC, GaAs, and InP. Available in compact benchtop and cassette-loading
- [Three dimensional processing of quartz glass (ø50 μm stepped structure)](https://www.samcointl.com/processes/etching/metal-dielectric-etching/three-dimensional-processing-of-quartz-glass-o50-μm-stepped-structure/) - Products RIE-400iPB Stepped structure formation with grayscale exposure A ø50 μm stepped structure was fabricated in quartz glass using a thick film resist with grayscale exposure. The selectivity for this process was approximately 1.Photo courtesy of Yamagata Research Institute of Technology. Request more information Back Share
- [Three dimensional processing of quartz glass (10 μm square pyramid)](https://www.samcointl.com/processes/etching/metal-dielectric-etching/three-dimensional-processing-of-quartz-glass-10-μm-square-pyramid/) - Products RIE-400iPB Precision fabrication with grayscale exposure A 10 μm square pyramid structure was fabricated in quartz glass using a thick film resist with grayscale exposure. The selectivity for this process was approximately 1.Photo courtesy of Yamagata Research Institute of Technology. Request more information Back Share
- [Superhydrophilization of COP](https://www.samcointl.com/processes/surface-treatment/aqua-plasma/superhydrophilization-of-cop/) - Products AQ-500 AQ-2000 Superiority of Aqua Plasma for hydrophilization Cyclo-olefin polymers (COPs) have excellent optical properties, especially low background fluorescence intensity comparable to glass, and are expected to be applied to microfluidic devices for fluorescence detection systems.The graph on the left shows the results of the modification of the COP surface with oxygen plasma and
- [Stress repeatability of SiN deposition](https://www.samcointl.com/processes/deposition/anode-pecvd/stress-repeatability-of-sin-deposition/) - Products PD-2201LC Repeatability of film stress at long intervals SiN deposition characteristics in a plasma enhanced CVD system for mass production. We have achieved a stable SiN film formation with no stress change over a long period of time. Request more information Back Share
- [SOI capacitive accelerometer](https://www.samcointl.com/processes/etching/si-etching/soi-capacitive-accelerometer/) - Products DRIE Systems Scallop-free sidewalls Comb-shape arrays with nanoscale-gap were fabricated for a MEMS capacitive accelerometer.The etched profile showed vertical scallop-free sidewalls.Etch Depth : 4.5 µmPattern Width : 0.3 µmAspect Ratio : 15Photo courtesy of Tabata/Tsuchiya Lab, Kyoto University. Request more information Back Share
- [Silver electrode reduction for LED packages](https://www.samcointl.com/processes/surface-treatment/aqua-plasma/silver-reduction-led-packages/) - Products AQ-500 AQ-2000 Reduction of silver without oxidation In LED packages, silver, with its electrical and optical advantages, is used as an electrode and reflective material. The oxygen plasma normally used in semiconductor packages cannot be used because the silver becomes black and oxidized and discolored. Aqua Plasma® is a reductive plasma cleaning process, which
- [RIE plasma etching of SiO2](https://www.samcointl.com/processes/etching/metal-dielectric-etching/rie-plasma-etching-of-sio2/) - Products RIE-10NR Achieving precise trenches with uniformity across ø6" wafers Trench etching of SiO2 was performed using the RIE-10NR system, achieving an etch depth of 540 nm with a rate of 18 nm/min. The selectivity to the resist mask ranged from 0.8 to 1.0, maintaining the resist sidewall angle and preventing microtrenching. Time-controlled etching stops
- [Pillar formation of InP](https://www.samcointl.com/processes/etching/compound-semiconductor-etching/pillar-formation-of-inp/) - Products RIE-400iP No sidewall or bottom roughness A smooth and precisely defined pillar structure with a diameter of 0.7 µm and a depth of 4 µm has been successfully formed. The process achieves vertical sidewalls with no measurable roughness and a defect-free bottom surface, ensuring excellent structural integrity.This high-precision etching process is ideal for applications
- [MEMS liquid chromatography (LC) microchip](https://www.samcointl.com/processes/etching/si-etching/mems-liquid-chromatography-microchip/) - Products DRIE Systems High flow-rate 30 µm deep pillars with different sizes and densities were fabricated.The pillar distribution worked for fast analysis time under high flow rate condition.Photo courtesy of Shoji Lab, Waseda University. Request more information Back Share
- [MEMS field effect transistor (FET)](https://www.samcointl.com/processes/etching/si-etching/mems-field-effect-transistor/) - Products DRIE Systems Integrating SWCNTs with MEMS technology MEMS structures were fabricated using the Bosch Process to integrate field-effect transistor (FET) with single-walled carbon nanotubes (SWCNTs).Terminals (source, drain and gate) were separated with sub-micron gaps by the anisotropic etch process.Photo courtesy of Tabata/Tsuchiya Lab, Kyoto University. Request more information Back Share
- [Large-area, flat bottom etching](https://www.samcointl.com/processes/etching/si-etching/large-area-flat-bottom-etching/) - Products DRIE Systems Smooth sidewalls A 2 mm wide large-area etching process was performed using the Bosch Process, achieving:Etch depth: 300 μmEtch selectivity: 170 (over photoresist)Open area:
- [High-speed vertical GaAs etch](https://www.samcointl.com/processes/etching/compound-semiconductor-etching/high-speed-vertical-gaas-etch/) - Products RIE-400iP For VCSEL device isolation We have developed a process technology that enables high-speed vertical machining up to and including ø6 inch wafers. This shows an example of a GaAs mesa etching process with an etching rate of about 2 μm/min. A selectivity of about 18:1 to resist masks and 70:1 to SiN masks
- [High-speed ashing of photoresist](https://www.samcointl.com/processes/surface-treatment/uv-ozone/high-speed-ashing-of-pr/) - Products UV Ozone Cleaners Effective and gentle treatment Samco’s UV Ozone cleaners achieve high-speed ashing by combining UV, ozone, and stage heating to generate reactive oxygen species and enhance etch rates. This process effectively removes organic materials like OMR-83, OFPR-800, and AZ-1350 without causing plasma damage. Request more information Back Share
- [GaAs VCSEL mesa etch](https://www.samcointl.com/processes/etching/compound-semiconductor-etching/gaas-vcsel-mesa-etch/) - Products RIE-400iP Smooth side wall This shows an example of vertical mesa etching on a ø3 inch VCSEL (Vertical Cavity Surface Emitting Lasers) wafer. The etching rate was 320 nm/min and the selectivity to the SiN mask was 25:1. By observing the clear DBR (Distributed Bragg Reflector) contrast, it is known that the etched side
- [GaAs deep mesa etch for MicroLED](https://www.samcointl.com/processes/etching/compound-semiconductor-etching/gaas-deep-mesa-etch-for-microled/) - Products RIE-400iP 3.8 μm Deep GaAs Etch This process demonstrates high-precision GaAs deep mesa etching optimized for microLED applications.Wafer Size: ø6-inchEtch Depth: 3.8 μmIn-Plane Uniformity:
- [Fine non-bosch process for Si nanodevice fabrication](https://www.samcointl.com/processes/etching/si-etching/fine-non-bosch-process-for-si-nanodevice-fabrication/) - Products RIE-800iPB RIE-800BCT Non-bosch process scallop-less DRIE Nano-level Si DRIE with line & space = 150/50 nm is achieved by the non-bosch process. Samco’ unique solution provides precise Si DRIE with an aspect ratio of 5:1. In principle, sidewall scallops can be a problem in the bosch process Si DRIE. However, sidewall scallops do not
- [Deep Si etching for TSV via hole fabrication](https://www.samcointl.com/processes/etching/si-etching/deep-si-etching-for-tsv-via-hole-fabrication/) - Products DRIE Systems Non-bosch process scallop-less DRIE Fabricating via holes for Through-Silicon Via (TSV) requires precision etching with specific characteristics to ensure performance and reliability:No undercut below the mask: Prevents insulation layer deposition issues on sidewalls.Smooth, tapered sidewalls: Improves step coverage for diffusion barriers and copper seed layers during sputtering.Reduced scallop size: Minimizes leakage risks
- [Deep Si etching for square pillar fabrication](https://www.samcointl.com/processes/etching/si-etching/deep-si-etching-for-square-pillar-fabrication/) - Products DRIE Systems Precise etching control Square-shaped pillars with a width of 28 μm were successfully fabricated using the Bosch Process. The pillars maintain their square geometry from top to bottom, demonstrating precise etching control.Pillar height: 450 μmProfile angle: 89.9°Photo courtesy of National Taiwan University. Request more information Back Share
- [Control of micro-loading effects](https://www.samcointl.com/processes/etching/atomic-layer-etching/control-of-micro-loading-effects/) - Learn how atomic layer etching (ALE) controls micro-loading effects for Si etching. Achieve uniform etch rates and depths across different hole patterns, with Angstrom-level precision.
- [126 μm deep via hole for TSV](https://www.samcointl.com/processes/etching/si-etching/126-μm-deep-via-hole-for-tsv/) - Products RIE-800iPB RIE-800BCT Non Bosch Process Scallop-less DRIE High-rate Si DRIE with a depth of 126 μm for a 50 μm hole pattern using a non-Bosch process. The upper part of the etched profile is adjusted to a forward taper of 73° with no bowing. The etch rate is 7.9 μm/min. In principle, sidewall scallops
- [Embedding results for optical waveguides](https://www.samcointl.com/processes/deposition/cathode-pecvd/embedding-results-for-optical-waveguides/) - Products PD-200STL PD-270STLC TEOS-SiO₂ deposition for optical waveguide embedding with cathode PECVD This process demonstrates the deposition of SiO2 for embedding optical waveguides using cathode-coupled plasma-enhanced chemical vapor deposition (PECVD). The results showcase precise refractive index control, essential for core formation, enabling void-free embedding of waveguides even with an aspect ratio of 1. The optimized
- [Characterization of SN-2-SiNx by FTIR](https://www.samcointl.com/processes/deposition/cathode-pecvd/characterization-of-sn2-sinx-by-ftir/) - FTIR characterization of SN-2-SiNx deposition with cathode PECVD
- [ALE of SiO2](https://www.samcointl.com/processes/etching/atomic-layer-etching/ale-of-sio2/) - Atomic layer etching (ALE) of SiO2, achieving 8.5 Å/cycle etch rates and Angstrom-level precision. Ideal for SiO2/SiN high selectivity etching in Self-Aligned Contact applications.
- [Failure Analysis: 5 layer Al wiring](https://www.samcointl.com/processes/etching/failure-analysis/fa-5-layer-al-wiring/) - Products RIE-10NR Removal of 5 passivation layers Defect analysis of exposed 5-layer Al wiring using RIE plasma etching system; successfully removing silicon nitride (SiN) passivation layer and silicon oxide (SiO2) interlayer insulator, preserving the underlying Al wiring. Request more information Back Share
- [Deep Si etching for pillar fabrication](https://www.samcointl.com/processes/etching/si-etching/deep-si-etching-for-pillar-fabrication/) - Products DRIE Systems Controlled dimensions and smooth sidewalls Silicon DRIE technology enables precise pillar fabrication, making it a versatile solution for various applications such as microfluidics and optical MEMS devices.Using the Bosch Process, this advanced etching method produces pillars with highly controlled dimensions and smooth sidewalls, minimizing scalloping for improved device performance.Pillar diameter: Ø10 µmPillar
- [Microfabrication of quartz glass](https://www.samcointl.com/processes/etching/metal-dielectric-etching/microfabrication-of-quartz-glass/) - Products RIE-400iPB Precise line and space pattern processing for imprint mold applications Line and space patterns with a width of 5 μm were fabricated in quartz glass using the RIE-400iPB, a research and development device. The process achieved a depth of 6 μm with a forward taper due to Cr mask retreat during etching, with
- [Atomic Layer Deposition (ALD)](https://www.samcointl.com/processes/deposition/atomic-layer-deposition/) - Atomic Layer Deposition (ALD) is a technology to deposit thin films in the atomic scale, using chemical reactions between sample surfaces and precursors in sequential pulsing. Compared to conventional Plasma Enhanced Chemical Vapor Deposition (PECVD) technology, the deposition rate is slow, but conformal thin-film coating can be achieved on the trench and via hole structures
- [MEMS optical chopper](https://www.samcointl.com/processes/etching/si-etching/mems-optical-chopper/) - Products DRIE Systems Notch-free SOI Etching A 15 µm thick silicon layer on a silicon-on-glass (SOG) substrate was etched using the Bosch Process.The standard Bosch Process causes undesirable notching at the silicon/insulation interface due to electrical charging. Samco offers a notch-free SOI etching process that maintains the etch selectivity by using superimposed Radio Frequency (RF)
- [Sales Inquiry Submitted – Thank You](https://www.samcointl.com/contact/product-information/inquiry-submitted/) - Thank you for reaching out to us! We’ve received your inquiry, and our team will get back to you soon with more details.In the meantime, explore our Latest News & Events to stay updated or browse our Technical Reports for insights into our advanced process solutions.
- [Cathode PECVD](https://www.samcointl.com/processes/deposition/cathode-pecvd/) - Samco’s Cathode PECVD technology leverages an RF-driven lower electrode to enable high-rate deposition of SiO2 and SiNx films with excellent step coverage and controllable properties. Utilizing proprietary self-bias deposition and a liquid TEOS source, this process achieves deposition rates exceeding 400 nm/min and allows for the formation of thick films over 10 µm with low
- [Fabrication of ultra-high Q-value SiNx ring resonators](https://www.samcointl.com/processes/deposition/cathode-pecvd/fabrication-of-ultra-high-q-value-sinx-ring-resonators/) - Products PD-200STL Using liquid source SN-2 with cathode PECVD A high Q-value SiNx ring resonator with a Q factor of 2.4 x 10⁵ and a compact ring radius of 100 μm has been successfully fabricated using liquid source SN-2. Leveraging SiNx’s high refractive index of approximately 2.0, precise control of the Si-to-N ratio was achieved
- [Copper reduction for electronic devices](https://www.samcointl.com/processes/surface-treatment/aqua-plasma/copper-reduction-for-electronic-devices/) - Products AQ-500 AQ-2000 Reduction of copper without oxidation Copper is widely used as a material for electronic components because of its excellent electrical properties and thermal conductivity, and because it is easy to plate and process. However, it is a metal that oxidizes easily when heated in an oxygen atmosphere, etc., and when wiring is
- [Long-term stable surface modification of polymers](https://www.samcointl.com/processes/surface-treatment/uv-ozone/long-term-polymer-surface-modification/) - Products UV Ozone Cleaners Stable for 180 days COP samples treated with UV Ozone and stage heating, along with ozone flow, maintained stable hydrophilic surfaces for 180 days, demonstrating the long-term effectiveness of UV Ozone treatment compared to oxygen plasma. Request more information Back Share
- [COP bonding for microfluidics](https://www.samcointl.com/processes/surface-treatment/aqua-plasma/cop-bonding-for-microfluidics/) - Products AQ-500 AQ-2000 Fabrication of microfluidics Cyclo-olefin polymers (COPs) have excellent optical properties, especially low background fluorescence intensity comparable to glass, and are expected to be applied to microfluidic devices for fluorescence detection systems.COPs surface-modified with Aqua Plasma® can be bonded to each other at room temperature and have a bond strength of over 160
- [Surface Treatment](https://www.samcointl.com/processes/surface-treatment/) - Our advanced dry cleaning technology use gases to address challenges associated with wet chemical cleaning. The product line includes three types of systems, suitable for both R&D and production. Samco’s cleaning solutions ensure high-quality surface treatment for diverse applications.Plasma Ashing & Stripping ( Photoresist Removal)UV Ozone Ashing of Photoresist (low damage)Cleaning of Metals (Gold, Copper,
- [Grating formation of SiO2](https://www.samcointl.com/processes/etching/metal-dielectric-etching/grating-formation-of-sio2/) - Products RIE-300NR Anisotropic etching with exceptional uniformity This grating formation was achieved through anisotropic plasma etching of SiO2 using the large-area RIE plasma etching system RIE-300NR. The process allows multiple wafers to be etched simultaneously with excellent uniformity across the batch. Request more information Back Share
- [85 μm deep sapphire etching](https://www.samcointl.com/processes/etching/metal-dielectric-etching/85-μm-deep-sapphire-etching/) - Products RIE-230iP High-speed processing with excellent anisotropy This process achieved 85 μm deep etching in sapphire, producing a shape with good anisotropy, maintaining angles between 80° and 90°. Request more information Back Share
- [High aspect ratio of 80:1 DRIE](https://www.samcointl.com/processes/etching/si-etching/high-aspect-ratio-of-80-drie/) - Products RIE-800iPB RIE-800BCT Nano and microstructure fabrication High-aspect-ratio silicon deep etching with a pattern width of 80 nm and a depth of 6380 nm was achieved using the Bosch process. This process enabled precise control over the shape while maintaining a sufficient selectivity with the resist mask. This advanced etching capability is ideal for applications
- [Trench etching for SiC MOSFETs](https://www.samcointl.com/processes/etching/compound-semiconductor-etching/trench-etching-for-sic-mosfets/) - Products RIE-800iP RIE-800iPC Smooth sides and sub-trenchless shape Samco’s advanced ICP etching system delivers precise trench gate processing for SiC MOSFETs, achieving smooth sidewalls and a sub-trenchless round shape. This highly controlled etching process ensures superior performance for SiC-based power devices.Etch depth: 2 μmEtch rate: >450 nm/minSiC/SiO2 selectivity: >5Uniformity (ø6 inch):
- [Ridge formation of InP lasers](https://www.samcointl.com/processes/etching/compound-semiconductor-etching/ridge-formation-of-inp-lasers/) - Products RIE-400iP Without sidewall deposits The anisotropic and small footing ridge shape with a width of 1.8 μm and a depth of 2.5 μm has been achieved. The etching rate of 350 nm/min was obtained with almost no sidewall deposits. The mask is SiO2. Request more information Back Share
- [Plasma scribing of GaAs wafer](https://www.samcointl.com/processes/etching/compound-semiconductor-etching/plasma-scribing-of-gaas-wafer/) - Products RIE-230iP Improving manufacturing yield The ICP (Inductively Coupled Plasma) etching system was used to create a narrow scribe line with no chipping, and a pointed V-shaped scribe bottom was used to create a GaAs plasma scribe that is easy to break. It is capable of processing a width of 11 μm and a depth
- [GaAs VCSEL formation](https://www.samcointl.com/processes/etching/compound-semiconductor-etching/gaas-vcsel-formation/) - Products RIE-230iP Fine anisotropic etching VCSEL (Vertical-Cavity Surface-Emitting Laser) is a semiconductor laser whose resonance direction is perpendicular to the substrate surface. Using an interferometric endpoint monitor, we aim to stop the etching at a depth of 8μm and achieve the targeted processing. Good machining has been achieved with no roughness on the side walls
- [HCG-GaAs VCSEL grating etch](https://www.samcointl.com/processes/etching/compound-semiconductor-etching/hcg-gaas-vcsel-grating-etch/) - Products RIE-400iP Next-generation VCSEL Replacing the upper DBR of the active layer with a diffraction grating significantly enhances VCSEL performance. This innovative approach employs a high-refractive index sub-wavelength diffraction grating (HCG), resulting in an HCG-VCSEL. As a next-generation VCSEL, it not only reduces the thickness of the epi layer but also incorporates a polarization control
- [Reverse taper etching of GaN for HBLEDs](https://www.samcointl.com/processes/etching/compound-semiconductor-etching/reverse-taper-etching-of-gan-for-hbleds/) - Products RIE-350iPC Improved intensity for high brightness LEDs Light confinement is achieved by making the element end of the LED inverted taper, which improves the intensity of light emission. Request more information Back Share
- [High selectivity etching of GaN/AlGaN](https://www.samcointl.com/processes/etching/compound-semiconductor-etching/high-selectivity-etching-of-gan-algan/) - Products RIE-230iP Etch stop at the AlGaN interface Samco offers high selectivity etching of GaN/AlGaN for GaN RF device fabrication by ICP plasma etching system.The p-GaN layer is fully etched to expose the AlGaN layer, and high selectivity processing of GaN/AlGaN is required, and processing with a selectivity ratio of 50 or more is possible.
- [GaN deep trench etch](https://www.samcointl.com/processes/etching/compound-semiconductor-etching/gan-deep-trench-etch/) - Products RIE-400iP for Vertical Power Devices We have experience in providing ICP-RIE equipment and process technology for the fabrication of GaN-based light emitting devices. We also provide equipment for trench and mesa etching for 4H-SiC power devices.Based on these experience, we have developed GaN trench etching process for vertical power devices. This result is a GaN
- [GaN forward taper trench etch](https://www.samcointl.com/processes/etching/compound-semiconductor-etching/gan-forward-taper-trench-etch/) - Products RIE-400iP for Vertical Power Devices We have been working on the development of trenching technology for GaN. It is possible to control the shape of the trench widely from vertical to forward tapered processing. We used GaN epitaxially grown on sapphire substrates and etched them with Samco’s RIE-400iP.In the conventional forward taper process, particles
- [High selectivity etching](https://www.samcointl.com/processes/etching/atomic-layer-etching/high-selectivity-etching/) - Products RIE-400iP-ALE GaN Atomic Layer Etching GaN was etched using the Atomic Layer Etching (ALE) method with a SiO2 mask. The trench width is 0.7 µm, yet narrower width process is also possible. The etching rate was about 7.0 Å/cycle, and the etching depth of GaN reached 225 nm. The etching rate could be made as slow
- [History](https://www.samcointl.com/about/history/) - Explore Samco's journey from modest beginnings to its growth and success today. Founded in 1979, Samco Inc. began as a small garage company in Kyoto, Japan.
- [Microlens array fabrication](https://www.samcointl.com/processes/deposition/cathode-pecvd/microlens-array-fabrication/) - Products PD-200STL PD-270STLC TEOS-SiO₂ deposition for microlens array fabrication with cathode PECVD This process demonstrates the formation of a microlens array using cathode-coupled PECVD. A layer of P- and B-doped SiO2 was deposited on an SiO2 substrate using LSCVD® equipment, followed by ICP etching to shape the layer into a cylindrical form. The microlens structure
- [Deposition](https://www.samcointl.com/processes/deposition/) - Samco’s deposition processes are renowned for their precision and versatility. We offer:Atomic Layer Deposition (ALD)Anode Plasma Enhanced Chemical Vapor Deposition (PECVD)Cathode Plasma Enhanced Chemical Vapor Deposition (PECVD) Deposition Systems Atomic Layer Deposition (ALD) Atomic Layer Deposition (ALD) is a technology to deposit thin films in the atomic scale, using chemical reactions between sample surfaces and
- [Xenon Difluoride (XeF2) Etching Systems](https://www.samcointl.com/products/etching/xef2-systems/) - Samco’s Xenon difluoride (XeF2) Etching Systems are mainly used for the etching of the Si sacrificial layer for fabrication of MEMS (Micro Electro Mechanical Systems) devices. This dry process avoids the destruction of devices due to stiction, which is a problem in the wet process, and eliminates the need for pre-treatment and post-processing in the
- [Privacy Policy](https://www.samcointl.com/privacy-policy/) - Samco's Privacy Policy Your privacy is important to Samco Inc. Samco’s Privacy Policy sets out how we use and protect personal data you give us when you browse our website. Samco is committed to ensuring that your privacy is protected. Samco will keep our online facilities and services accurate, confidential and private. 1. Purpose of
- [Contact](https://www.samcointl.com/contact/) - Contact us for product information requests, technical support, and career opportunities.
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- [Disclosure](https://www.samcointl.com/news-events/disclosure/)
- [Site Policy](https://www.samcointl.com/site-policy/) - Samco's Site Policy The Samco website (“Website” hereinafter) is operated by Samco Inc. (“Samco” hereinafter). Before using this Website, please read and consent to the following usage conditions. Please be aware that Site Policy and related regulations may change without prior notice. 1. Disclaimer Samco does not provide any guarantee whatsoever regarding the accuracy, usefulness,
- [Careers](https://www.samcointl.com/careers/)

## Events

- [ICPS 2026](https://www.samcointl.com/news-events/events/2026/icps-2026/) - Visit Samco at ICPS 2026 (The 37th International Conference on the Physics of Semiconductors), Aug 16-21, 2026 at Keio Plaza Hotel, Shinjuku (Tokyo).

## Products

- [Si DRIE System RIE-802BCT](https://www.samcointl.com/product/etching/si-drie/rie-802bct/) - ⌀8″ Cassette Loading Bosch Process Dual RCs Dual chamber system The RIE-802BCT is a silicon deep reactive ion etching system designed for high-volume production. Equipped with two reaction chambers, the system provides high-throughput Si deep etching for a wide range of device applications.An atmospheric cassette loader, wafer edge protection ring, and high-precision wafer aligner are
- [UV Ozone Cleaner UV-300HC](https://www.samcointl.com/product/surface-treatment/uv-ozone-cleaning/uv-300hc/) - ⌀240 mm Cassette Loading none Carrier Tray Transfer Production system with dual cassettes The UV-300HC is a high performance and cassette loading UV ozone cleaner for production. This industry-leading system has 2 atmospheric loading cassettes and can achieve ashing rates of 10-100 nm / min. It enables electrical damage-free surface preparation prior to the epitaxial
- [Plasma Enhanced ALD System AD-8002LPC](https://www.samcointl.com/product/deposition/ald-systems/ad-8002lpc/) - ⌀220 mm Cassette Loading ALD Dual Cassettes Dual-chamber ALD for efficient deposition The AD-8002LPC is a dual-chamber ALD system designed for high-precision thin film deposition from R&D to production. With an integrated vacuum cassette chamber, vacuum load lock, and two independent process chambers, the system provides efficient substrate handling and flexible process capability.Supporting both thermal
- [Plasma Enhanced ALD System AD-10P](https://www.samcointl.com/product/deposition/ald-systems/ad-10p/) - Atomic Layer Deposition (ALD) System AL-10 achieves precise film thickness control and excellent step coverage.
- [UV Ozone Cleaner UV-300H](https://www.samcointl.com/product/surface-treatment/uv-ozone-cleaning/uv-300h/) - ⌀273 mm Open Load none none High ashing rates The UV-300H is a high-performance, compact UV ozone cleaner designed for efficient organic removal. Featuring a convenient sliding drawer for substrate loading, it combines ultraviolet irradiation, high-concentration ozone, and stage heating to deliver gentle yet effective cleaning. This system supports a wide range of substrates, including
- [Plasma Cleaner PC-2000](https://www.samcointl.com/product/surface-treatment/plasma-cleaning/pc-2000/) - 400 x 400 mm Open Load none none High-Capacity Plasma Cleaner for Diverse Applications The PC-2000 is a versatile parallel-plate plasma cleaner engineered for large-scale cleaning and surface modification tasks. With a spacious chamber and flexible shelf configurations, it is capable of processing large substrates (up to 400 x 400 mm) and supports both RIE
- [Cathode PECVD System PD-330STC](https://www.samcointl.com/product/deposition/cathode-pecvd/pd-330stc/) - ⌀300 mm Cassette Loading LSCVD® none Processing up to ø300 mm (12") with atmospheric cassette loading The PD-330STC is a low-temperature (80 ~ 400°C), high-rate (>300 nm/min) plasma-enhanced CVD system for mass production. Samco’s unique liquid source CVD system uses self-bias deposition techniques and a liquid TEOS source to deposit SiO2 films with low stress,
- [ICP-RIE Plasma Etching System RIE-800iP](https://www.samcointl.com/product/etching/icp/rie-800ip/) - ⌀8″ Load Lock HSTC™ none Excellent repeatability & stability The RIE-800iP, a load lock ICP-RIE plasma etching system, utilizes high-density inductively coupled plasma (ICP) to achieve precise etching. Designed for wafers up to 200 mm (8 inch), the system features an advanced ICP source, temperature-controlled electrode, and a high-flow exhaust system, all within a compact,
- [RIE Plasma Etching System RIE-200C](https://www.samcointl.com/product/etching/rie/rie-200c/) - ⌀8″ Cassette Loading none Dual Cassettes High throughput system for production The RIE-200C is a cassette type system for mass production, developed based on our experience with the CCP RIE system “RIE-10NR”, which has a longstanding stable record. This system is capable of high-precision etching and ashing of various silicon thin films such as Si,
- [Cathode PECVD System PD-100ST](https://www.samcointl.com/product/deposition/cathode-pecvd/pd-100st/) - ⌀4″ Open Load LSCVD® none Open load system up to ø100 mm (4") The PD-100ST is a low-temperature (80 ~ 400°C), high-rate (>300 nm/min) plasma-enhanced CVD system for R&D. Samco’s unique liquid source CVD system uses self-bias deposition techniques and a liquid TEOS source to deposit SiO2 films with low stress, from thin films to
- [ICP-RIE Plasma Etching System RIE-800iPC](https://www.samcointl.com/product/etching/icp/rie-800ipc/) - ⌀8″ Cassette Loading HSTC™ Vacuum Cassette Chamber Excellent process repeatability & stability The RIE-800iPC, a high-density plasma etching system, uses an inductively coupled plasma as the discharge form. This system is equipped with a vacuum cassette chamber and is a full-scale production system with excellent process repeatability and stability. Contact sales Key Features & Benefits
- [Si DRIE System RIE-800BCT](https://www.samcointl.com/product/etching/si-drie/rie-800bct/) - ⌀8″ Cassette Loading Bosch Process none Atmospheric cassette loading The RIE-800BCT is a production silicon DRIE system that uses an inductively coupled plasma as the discharge form.This high performance system is capable of high aspect ratio processing (over 100) and low scallop processing while maintaining a high etch rate and high selectivity. Contact sales Key
- [Si DRIE System RIE-800iPBC](https://www.samcointl.com/product/etching/si-drie/rie-800ipbc/) - ⌀8″ Cassette Loading Bosch Process Vacuum Cassette Chamber Vacuum cassette loading Samco’s RIE-800iPBC is a high performance inductively coupled plasma (ICP) etching system that uses high-density plasma to perform deep silicon etching required by MEMS and TSV applications.This system is a dedicated silicon etching system specifically designed for the Bosch process (licensed from Robert Bosch
- [Si DRIE System RIE-800iPB](https://www.samcointl.com/product/etching/si-drie/rie-800ipb/) - ⌀8″ Cassette Loading Bosch Process Vacuum Cassette Chamber Trusted equipment with extensive process library Samco’s RIE-800iPB is a high performance, inductively coupled plasma (ICP) etching system that uses high-density plasma to perform deep silicon etching required by MEMS and TSV applications.The RIE-800iPB is a dedicated silicon etching system specifically designed for the Bosch process (licensed
- [RIE Plasma Etching System RIE-10NR](https://www.samcointl.com/product/etching/rie/rie-10nr/) - The RIE-10NR is a novel low-cost, high-performance, fully automatic reactive ion etching system meeting the demanding process requirements for non-corrosive gas chemistry.
- [RIE Plasma Etching System RIE-300NR](https://www.samcointl.com/product/etching/rie/rie-300nr/) - ⌀300 mm Open Load none none Processing up to ø300 mm (ø12") The RIE-300NR is an ideal reactive ion etching system for processing of ø300 mm wafer and multiple wafers (ø3″ x 12, ø4″ x 8, etc.) with excellent uniformity. This system is designed to minimize factory space requirements, enhance throughput, maximize uptime, and reduce
- [Cathode PECVD System PD-200STL](https://www.samcointl.com/product/deposition/cathode-pecvd/pd-200stl/) - ⌀8″ Load Lock LSCVD® Carrier Tray Transfer Load lock system up to ø200 mm (8") The PD-200STL is a low-temperature (80 ~ 400°C), high-rate (>300 nm/min) plasma enhanced CVD system for R&D. Samco’s unique LSCVD system uses self-bias deposition techniques and a TEOS to deposit SiO₂ films with low stress, from thin films to extremely
- [ICP-RIE Plasma Etching System RIE-230iP](https://www.samcointl.com/product/etching/icp/rie-230ip/) - ⌀230 mm Load Lock Tornado ICP® Carrier Tray Transfer Batch processing for small diameter wafers with carrier tray transfer The RIE-230iP is a load-lock ICP plasma etching system that uses an inductively coupled plasma as the discharge to perform ultra-fine processing of various materials at high speed. This system efficiently generates stable, high-density plasma by
- [ICP-RIE Plasma Etching System RIE-100HiC](https://www.samcointl.com/product/etching/icp/rie-100hic/) - ⌀6″ Cassette Loading HSTC™ none High-speed atmospheric transfer The RIE-100HiC is an an atmospheric cassette loading Inductively Coupled Plasma (ICP) etching system which handles up to ø150 mm (ø6”) wafers.This system is capable of high-precision etching and ashing of various silicon thin films such as Si, Poly-Si, SiO2, SiN, etc. The RIE-100HiC achieves high throughput
- [ICP-RIE Plasma Etching System RIE-230iPC](https://www.samcointl.com/product/etching/icp/rie-230ipc/) - ⌀230 mm Cassette Loading Tornado ICP® Vacuum Cassette Chamber Versatile load lock system The RIE-230iPC cassette loading ICP-RIE plasma etching system utilises high-density inductively coupled plasma (ICP) to achieve precise etching. Designed with special ø230 mm carrier tray cassettes, the system features an advanced ICP source, temperature-controlled electrode, and a high-flow exhaust system, all within
- [Aqua Plasma® Cleaner AQ-2000](https://www.samcointl.com/product/surface-treatment/aqua-plasma/aq-2000/) - 406 x 413 mm Open Load Aqua Plasma™ none Scalable System for Batch Processing The AQ-2000 is a scalable Aqua Plasma® cleaning system designed for production-scale operations. With H₂O as the process gas, it offers safe, eco-friendly treatments like reducing metal oxide films, cleaning organic stains, resin bonding, and superhydrophilization. Equipped with multiple shelves, it
- [ICP-RIE Plasma Etching System RIE-400iP](https://www.samcointl.com/product/etching/icp/rie-400ip/) - ⌀4″ Load Lock HSTC™ none Compact model for R&D The RIE-400iP, a load lock ICP-RIE plasma etching system, utilizes high-density inductively coupled plasma (ICP) to achieve precise etching. Designed for wafers up to 100 mm (4 inch), the system features an advanced ICP source, temperature-controlled electrode, and a high-flow exhaust system, all within a compact,
- [ICP-RIE Plasma Etching System RIE-350iPC](https://www.samcointl.com/product/etching/icp/rie-350ipc/) - ⌀350 mm Cassette Loading HSTC™ Vacuum Cassette Chamber Up to ø350 mm carrier tray The RIE-350iPC is a cassette loading Inductively Coupled Plasma (ICP) etching system which handles up to ø350 mm carrier tray for multiple wafers batch processing.This system delivers robust and reliable hardware and exceptional process control at high productivity for a wide
- [ICP-RIE Plasma Etching System RIE-400iPC](https://www.samcointl.com/product/etching/icp/rie-400ipc/) - ⌀4″ Cassette Loading HSTC™ Vacuum Cassette Chamber Compact model for small diameter wafers The RIE-400iPC cassette loading ICP-RIE plasma etching system utilises high-density inductively coupled plasma (ICP) to achieve precise etching. Designed for wafers up to 100 mm (4 inch), the system features an advanced ICP source, temperature-controlled electrode, and a high-flow exhaust system, all
- [UV Ozone Cleaner UV-2](https://www.samcointl.com/product/surface-treatment/uv-ozone-cleaning/uv-2/) - ⌀8″ Open Load none none Compact power for up to 8-inches The UV-2 is a versatile, compact benchtop UV ozone cleaning system designed for R&D and low-volume production. Leveraging a unique combination of ultraviolet radiation, ozone, and heat, it effectively removes organic materials from a wide range of substrates, including silicon, gallium arsenide (GaAs), sapphire,
- [UV Ozone Cleaner UV-1](https://www.samcointl.com/product/surface-treatment/uv-ozone-cleaning/uv-1/) - ⌀4″ Open Load none none Compact benchtop system The UV-1 is a versatile and compact benchtop UV ozone cleaner designed for gentle yet effective organic material removal from a wide variety of substrates. Combining ultraviolet irradiation, ozone, and stage heating, the UV-1 ensures high-performance cleaning while maintaining substrate integrity. This system is ideal for applications
- [Aqua Plasma® Cleaner AQ-500](https://www.samcointl.com/product/surface-treatment/aqua-plasma/aq-500/) - 320 x 230 mm Open Load Aqua Plasma™ none Compact system for R&D The AQ-500 is a compact Aqua Plasma® cleaning system, ideal for R&D applications. Using H₂O as the process gas, it enables safe, eco-friendly surface treatments, including reduction of metal oxide films, cleaning of organic stains, resin bonding, and superhydrophilization. Its optimized design
- [Cathode PECVD System PD-270STLC](https://www.samcointl.com/product/deposition/cathode-pecvd/pd-270stlc/) - ⌀220 mm Cassette Loading LSCVD® Carrier Tray Transfer Batch processing for small diameter wafers The PD-270STLC is a low-temperature (80 ~ 400°C), high-rate (>300 nm/min) plasma-enhanced CVD system for mass production. Samco’s unique liquid source CVD system uses self-bias deposition techniques and a liquid TEOS source to deposit SiO2 films with low stress, from thin
- [Atomic Layer Etching System RIE-800iP-ALE](https://www.samcointl.com/product/etching/ale/rie-800ip-ale/) - ⌀8″ Load Lock ALE none Precise depth control The RIE-800iP Atomic Layer Etching (ALE) system is an advanced and versatile tool designed for precise and controlled etching processes at the atomic scale. Equipped with cutting-edge technology, the RIE-800iP ALE enables researchers and engineers to achieve atomic-level precision in etching various materials. The system employs the
- [Atomic Layer Etching System RIE-400iP-ALE](https://www.samcointl.com/product/etching/ale/rie-400ip-ale/) - ⌀4″ Load Lock ALE none Precise depth control The RIE-400iP Atomic Layer Etching (ALE) system is an advanced and versatile tool designed for precise and controlled etching processes at the atomic scale. Equipped with cutting-edge technology, the RIE-400iP ALE enables researchers and engineers to achieve atomic-level precision in etching various materials. The system employs the
- [Plasma Enhanced ALD System AD-800LP](https://www.samcointl.com/product/deposition/ald-systems/ad-800lp/) - ⌀220 mm Load Lock ALD none The AD-800LP is a cutting-edge ALD (Atomic Layer Deposition) system that delivers precise atomic-level control over film thickness. By alternately introducing organometallic precursors and oxidants into the reaction chamber, it ensures deposition exclusively through surface reactions. Equipped with a proprietary ICP Tornado Plasma source, the system maintains stable plasma
- [Plasma Cleaner PC-300](https://www.samcointl.com/product/surface-treatment/plasma-cleaning/pc-300/) - 320 x 230 mm Open Load none none Compact Plasma Cleaner for R&D and Low-Volume Production The PC-300 is a space-efficient, parallel-plate plasma cleaner designed for precise removal of organic and inorganic contaminants from surfaces. Equipped with a compact chamber and flexible electrode shelves, it is ideal for R&D applications and small-scale production. The system
- [PECVD System PD-3800L](https://www.samcointl.com/product/deposition/anode-pecvd/pd-3800l/) - ⌀360 mm Load Lock none Carrier Tray Transfer Tray based batch processing The PD-3800L is a loadlock plasma enhanced chemical vapor deposition (PECVD) system capable of depositing silicon-based films (silicon oxide, silicon nitride, silicon oxynitride and amorphous silicon).This system offers higher throughput due to the large reaction chamber and batch proccesing of multiple wafers by
- [PECVD System PD-220NL](https://www.samcointl.com/product/deposition/anode-pecvd/pd-220nl/) - ⌀220 mm Load Lock none none Compact load lock system for R&D The PD-220NL is a loadlock plasma-enhanced chemical vapor deposition (PECVD) system capable of depositing silicon-based films (silicon oxide, silicon nitride, silicon oxynitride and amorphous silicon).This system offers all of the standard features for PECVD in a very compact footprint. Films with superior thickness
- [PECVD System PD-2201LC](https://www.samcointl.com/product/deposition/anode-pecvd/pd-2201lc/) - ⌀8″ Cassette Loading none none Space-saving production system The PD-2201LC is a cassette loading plasma-enhanced chemical vapor deposition (PECVD) system capable of depositing silicon-based films (silicon oxide, silicon nitride, silicon oxynitride and amorphous silicon).This system offers all of the standard features for PECVD in a space-saving footprint. Films with superior thickness uniformity and stress control
- [ICP-RIE Plasma Etching System RIE-802iPC](https://www.samcointl.com/product/etching/icp/rie-802ipc/) - ⌀8″ Cassette Loading HSTC™ Dual RCs Dual chamber system for production The RIE-802iPC high-density plasma etching system uses an inductively coupled plasma as the discharge form. This system is equipped with a vacuum cassette chamber and two reaction chambers for full-scale production system with excellent process repeatability and stability. Contact sales Key Features & Benefits
- [Si Sacrificial Layer Etching System VPE-4F](https://www.samcointl.com/product/etching/xef2/vpe-4f/) - ⌀4″ Open Load none none Compact benchtop system The VPE-4F is an XeF₂ etching system tailored for etching silicon sacrificial layers in MEMS (Micro-Electro-Mechanical Systems) fabrication. Its dry etching process eliminates stiction issues associated with wet processing, streamlining production by removing the need for pretreatment and post-processing. Designed for efficiency and space-saving, the VPE-4F offers
- [RIE Plasma Etching System RIE-200NL](https://www.samcointl.com/product/etching/rie/rie-200nl/) - ⌀8″ Load Lock none Carrier Tray Transfer Stable repeatability with load lock chamber The RIE-200NL is a load lock type reactive ion etching system that improves process repeatability and allows for corrosive gas chemistry. A fully optimized process chamber design provides excellent uniformity on ø8″ wafers or ø220 mm carrier trays of smaller wafers. The
- [Si DRIE System RIE-400iPB](https://www.samcointl.com/product/etching/si-drie/rie-400ipb/) - ⌀4″ Load Lock Bosch Process none Novel low-cost system for R&D The RIE-400iPB is a load lock deep silicon etching system specifically designed for the Bosch Process, accommodating wafers up to 100 mm (4 inches). The system is equipped with a unique reaction chamber, a temperature-controlled electrode, and a high-flow exhaust system, all integrated into

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