Process Solutions for RF Device Manufacturing

SAMCO Inc. > Markets > Process Solutions for RF Device Manufacturing

 1. Epi Growth

Epi Growth
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 2. Mask Fabrication for Ion Implantation

Mask Fabrication for Ion Implantation
Cathode PECVD chamber
High deposition rate of cathode PECVD

Samco’s unique cathode PECVD technology enables high-rate SiO2 deposition over 150 nm/min.

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3. Hard Mask Patterning by SiO2 Etching

Hard Mask Patterning by SiO2 Etching
Tornado ICP Coil
SiO2 Etch Uniformity over 200mm

Unique Tornado ICP coil provides stable high-density plasma discharge for uniform SiO2 etching over 200 mm.

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4. Photoresist Ashing

Photoresist Ashing
Robot Wafer Transfer
N2 purge cassette chamber

State-of-the-art wafer handling robot and double cassettes improve throughput of photoresist ashing process.

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5. Ion Implantation

Ion Implantation

6. Hard Mask Removal

Hard Mask Removal
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7. Recess Etching

Recess Etching
GaAs Recess Etching

Low damage plasma etching of GaAs layer was performed over photoresist.
Etch Selectivity : 67 (over photoresist)
GaAs Etch Rate : 102 nm/min

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8. Photoresist Ashing

Photoresist Ashing

9. Electrode Formation

Electrode Formation
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10. Passivation Deposition by PECVD

SiO2 Passivation Deposition by PECVD in RF Device Manufacturing Process
SiO2 deposition uniformity

Batch processing of 6 x Ø4-inch wafers show high uniformity of SiO2 deposition.

Batch-to-batch Deposition Uniformity : ±0.2 %
Deposition Rate : 12.2 nm/min

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11. Contact Hole Formation by SiO2 Etching

Contact Hole Formation by SiO2 Etching
Robot Arm Wafer Handling
SiO2 Etching for Contact Hole Formation

Double Cassettes and multi-joint robot wafer handling of Samco’s atmospheric cassette RIE systems improve throughput of SiO2 etching for contact hole formation. The systems show stable SiO2 etch uniformity around ± 1.5% over 25 x ø4”wafers.

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12. Glue Wafer on Support

Glue Wafer on Support
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13. Via Hole Etching

Via Hole Etching
ICP Coil for SiO2 Etching

High-power planar ICP coil enables high-rate etching of compound semiconductors including GaAs and SiC for via hole fabrication.

SiC Via Hole Etching

 SiC Via Hole
Ø60 µm hole pattern
Etch Rate : 1.0 µm/min
Sample Temperature : lower than 150°C
Selectivity : 95 (over Ni mask)
Etch Depth : 89.2 µm

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14. Dicing and Packaging

GaAs Plasma Dicing for RF Device Fabrication
Plasma Dicing
GaAs Plasma Dicing

Small GaAs wafers can be processed in plasma scribing without chipping and clacking for higher yields.

Contact SAMCO for more product information
Any questions? Contact us for more detail.
Contact SAMCO for more product information
Any questions? Contact us for more detail.
Contact SAMCO for more product information
Any questions? Contact us for more detail.
Contact SAMCO for more product information
Contact us for more detail.
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