Scientific paper on phototransistor fabrication using PECVD SiO2 by National Cheng Kung University

February 25, 2017 Samco 2017 Customer, SAMCO Customer Publication, Silicon/Dielectrics PECVD, SiO2 PECVD

High Responsivity MgZnO Ultraviolet Thin-Film Phototransistor Developed Using Radio Frequency Sputtering

Jyun-Yi Li, Sheng-Po Chang *, Ming-Hung Hsu and Shoou-Jinn Chang
Department of Electrical Engineering and Advanced Optoelectronic Technology Center, Institute of Microelectronics, National Cheng Kung University, Tainan 701, Taiwan
Materials 2017, 10(2), 126

Ultraviolet phototransistors were fabricated using Mg-doped ZnO film to achieve high mobility, a fast on–off transition, and high responsivity under deep UV illumination. Samco PECVD equipment PD-220NA was used for 200 nm thick SiO2 film deposition as a dielectric layer.

Samco offers high-speed SiO2 and SiNx film deposition technologies for various device applications. Also, we provide low-temperature PECVD (under 80°C) for device fabrication using heat-sensitive materials.
For more details of the plasma deposition process capabilities, please visit the process solution page below.
High-speed SiO2 and SiNx Deposition
Low-temperature SiO2 and SiNx PECVD Process

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