Scientific paper on micro-LEDs fabrication using GaN plasma etching from National Chiao Tung University

January 19, 2017 Samco 2017 Customer, Compound Semi Etch, GaN Etch, LEDs, SAMCO Customer Publication

Superior characteristics of microscale light emitting diodes through tightly lateral oxide-confined scheme

Shen-Che Huang1, Heng Li1 Zhe-Han Zhang1 Hsiang Chen2 Shing-Chung Wang1 and Tien-Chang Lu1
1 Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta-Hsueh Rd., Hsinchu 30010, Taiwan
2 Department of Applied Materials and Optoelectronic Engineering, National Chi Nan University, 1 Ta-Hsueh Rd., Puli 54561, Taiwan
Appl. Phys. Lett. 110, 021108 (2017); doi: 10.1063/1.4973966

Micro-LED devices with oxide-refilled current apertures of different sizes were fabricated on sapphire substrates. Samco ICP-RIE etcher was used for aperture pattern transfer by GaN plasma etching with etching depth control.

Samco has dedicated to academic and industry customers for both research and production of LED devices by providing equipment and process technologies of plasma etching and PECVD. For more details on our process solutions for LED manufacturing, please visit the process solutions page below.
Patterned Sapphire Substrate & GaN Etch for HB LEDs
Also, our process data on sapphire (Al2O3) etching and GaN etching can be found here.
Sapphire Plasma Etching
GaN Plasma Etching
micro LED

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