Scientific paper on growth of AlN on Si from the Institute of Physical and Chemical Research (RIKEN), Japan

Direct Growth and Controlled Coalescence of Thick AlN Template on Micro-circle Patterned Si Substrate

Tran, B. T., Hirayama, H., Maeda, N., Jo, M., Toyoda, S., & Kamata, N. (2015). Direct growth and controlled coalescence of thick AlN template on micro-circle patterned Si substrate. Scientific reports, 5(1), 1-6.

https://doi.org/10.1038/srep14734

Scientific paper on Si subwavelength grating from Tohoku University, Japan

Micro-fabricated Si subwavelength grating for frequency-domain THz beam steering covering the 0.3–0.5 THz frequency band

Kohei Chiba, Taiyu Okatani, Naoki Inomata, and Yoshiaki Kanamori, “Micro-fabricated Si subwavelength grating for frequency-domain THz beam steering covering the 0.3–0.5 THz frequency band,” Opt. Express 31, 27147-27160 (2023)

Graduate School of Engineering, Department of Robotics, Tohoku University, 6-6-01 Aoba, Aramaki, Aoba-ku, Sendai, Miyagi, Japan

https://doi.org/10.1364/OE.492942

Samco PECVD system PD-100ST was used for SiO2 film deposition using TEOS.

Scientific paper on polycrystalline Si film from Colorado School of Mines

Pinhole electrical conductivity in polycrystalline Si on locally etched SiNy/SiOx passivating contacts for Si solar cells

Anderson, C.L. & Guthrey, H.L. & Nemeth, W. & Jiang, C.-S & Page, M.R. & Stradins, P. & Agarwal, S.. (2023). Pinhole electrical conductivity in polycrystalline Si on locally etched SiN /SiO passivating contacts for Si solar cells. Materials Science in Semiconductor Processing. 165. 107655. 10.1016/j.mssp.2023.107655.

Department of Chemical and Biological Engineering, Colorado School of Mines, Golden, CO, 80401, USA

National Renewable Energy Laboratory, Golden, CO, 80401, USA

https://doi.org/10.1016/j.mssp.2023.107655.

Boron-doped polycrystalline Si on locally etched silicon nitride/silicon oxide (PLENO) passivating contacts was studied for monocrystalline Si (c-Si) solar cell application. Samco open-load RIE system RIE-10NR was used for silicon etching.

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